Layers thin film transistor

Polymers such as PTV have potential applications as the active semiconductor layer in thin-film transistors (TFTs). 

The a,a-disubstituted bis(dithienothiophene)derivatives 116 (Table 2) have been deposited as active layers in organic thin-film transistors <1999SM(102)987>. 

Meth, J. S. Zane, S. G. Sharp, K. G. Agrawal, S. 2003. Patterned thin film transistors incorporating chemical bath deposited cadmium sulfide as the active layer. Thin Solid Films. 444 227-234. 

Chiang, H. Q. Wager, J. F. Hoffman, R. L. Jeong, J. Keszler, D. A. 2005. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86 013503/1-013503/3. 

Carcia, R F. McLean, R. S. Reilly, M. H. 2006. High performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl. Phys. Lett. 88 123509/1-123509/3. 

The CBD CdS was also applied in other areas of device fabrication and application. Mereu et al.32 fabricated thin-film field-effect transistors using CBD CdS on Si02/Si (n-type) substrates. Meth et al.33 fabricated thin-film transistors (TFTs) that incorporated patterned CBD cadmium sulfide as the active layer. Mobility in the =1 -cm2/Vs range with on/off ratios of =105 are needed for practical TFTs (e.g., for displays). Mobility values of 0.1 -1 cm2/Vs with on/off ratios exceeding 107 have been reported for these types of TFTs using CBD CdS. 

Cheng, H.-C. Chen, C.-F. Lee, C.-C. 2006. Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath method. Thin Solid Films 498 142-145. 

As an example of the latter technique, Volkman et al. demonstrated the feasibility of using spin-cast zinc oxide nanoparticles encapsulated in 1-dodecanethiol to fabricate a functional transistor.44 The zinc oxide was deposited on a thermally grown silicon dioxide layer on a conventional silicon wafer, with thermally evaporated gold source and drain electrodes. As reported, the process requires very small particles (3nm or less) and a 400 °C forming gas anneal. A similar approach was also reported by Petrat, demonstrating n-channel thin-film transistor operation using a nanoparticle solution of zinc oxide dispersed onto a thermally grown silicon dioxide layer on a conventional... 

Thin-film transistors (TFTs), 22 222 in displays, 22 259 hydrogenated amorphous silicon in, 22 135, 136, 138-139 Thin-layer chromatography (tic), 6 384, 9 233-234... 

Other exploits have focused on the electronic manipulation of the PPEs via side chains (Table 4, entries 7-16) [36]. If a conjugated side chain is utilized, then the electronic properties of the resulting PPE are influenced. The synthesis of such cross-conjugated PPE-PPV derivatives involves the Pd-catalyzed coupling of a diethynylbenzene derivative with a l,4-distyryl-2,5-diiodoben-zene. The electronic properties of such PPEs are variable by changing the styryl side chain (Table 4, entries 7-12). The polymers are attractive as active layers in light-emitting diodes (LEDs) and thin-film transistors. 

Lin YY, Gundlach DJ, Nelson SF, Jackson TN (1997) Stacked pentacene layer organic thin-film transistors. IEEE Electron Dev Lett 18 606-608... 

Hirai (2) prepared an organic semiconductor layer for an organic thin-film transistor consisting of pentacene derivatives, (II), having a thickness of 1 pm. 

Title Copolymer, Organic Insulating Layer Composition, and Organic Insulating Layer and Organic Thin-Film Transistor Manufactured Using the Same... 

The R-linked dimer of dithieno[3,2-5 2,3-d] thiophene (451) and its alkylated derivatives have proven to be effective as the active layer in organic thin film transistors (OTFTs (04SM(146)251 05JA13281). 

The imager disclosed in WO-A-9202959 comprises thin film transistors deposited on a substrate, a planarization layer deposited on the transistors followed by a mercury cadmium telluride layer and a top electrode layer. 

Here, 41 indicates the thin film transistors, 51 the substrate, 43 a dielectric layer, 49 polysilicon gates, 50 gate electrodes, 55 contact plugs, 56 bottom electrodes, 53 the planarization layer, 54 the mercury cadmium telluride layer and 57 the top electrode layer. The planarization layer is formed from silicon oxide, silicon nitride, silicon oxide nitride or from a polyimide. The planarization layer may be formed as a double or triple layer. 

Thin-film transistors (TFTs) are among the key building blocks of these circuits [2]. Figure 10.1 shows a cross-sectional view of a TFT. A thin insulating film (i.e. the gate dielectric) isolates source and drain electrodes and a semiconductor layer... 

As a first demonstration of the fabrication of TFT devices by digital lithography, tri-layer insulated-gate thin-film transistors were fabricated on four-inch glass substrates using a three-layer wax-mask process. Mask layers were used to define the... 

Fig. 13.1. Schematic structure of the organic thin-film transistor. Starting from the bottom, the transistor consists of the following layers substrate (brown), gate electrode G, (yellow), gate insulator layer (red), the source, S, and drain, D, electrodes (yellow), semiconductor (grey).

Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson, Stacked pentacene layer organic thin-film transistors with improved characteristics, IEEE Electr. Device L. 1997, 18, 606-608. 

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