Gate thin film transistor

Figure 4.1. Schematic representation of a staggered, bottom-gate, thin-film transistor.

Figure 12.14. Structure and fabrication process flow of a printed bottom-gated thin-film transistor (TFT).

As a first demonstration of the fabrication of TFT devices by digital lithography, tri-layer insulated-gate thin-film transistors were fabricated on four-inch glass substrates using a three-layer wax-mask process. Mask layers were used to define the... 

Moonen PF, Vratzov B, Smaal WTT, Gelinck GH, P6ter M, Meinders ER, et al. A common gate thin film transistor on poly(ethylene naphthalate) foil using step-and-flash imprint lithography. Org Electron 2011 12(12) 2207-14. 

Shannon JM, Gerstner EG (2003) Source-gated thin-film transistors. IEEE Election Dev Lett 24 405-407... 

Lindner T, Paasch G, Scheinert S (2005) Simulated operation and properties of source-gated thin-film transistors. IEEE Trans Electron Dev 52 47-55... 

Au-gate poly-Si thin film transistor Au-gate MIS capacitance 18-mer ssDNA, 1012 - 1013 ssDNA/cm2 5 mM phosphate buffer pH 7.2 18-mer cDNA A Eh 355 mV AVfi, 140mV 1 h 30 min Ag/AgCl [36]... 

Klauk H, Halik M, Zschieschang U, Schmid G, Radlik W, Weber W (2002) High-mobility polymer gate dielectric pentacene thin film transistors. J Appl Phys 92(9) 5259-5263... 

Flur, S.-FL Yoon, M.-H. Gaur, A. Shim, M. Facchetti, A. Marks, T. J. Rogers, J. A. 2005. Organic nanodielectrics for low voltage carbon nanotube thin-film transistors and complementary logic gates. J. Am. Chem. Soc. 127 13808-13809. 

Carcia, R F. McLean, R. S. Reilly, M. H. 2006. High performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl. Phys. Lett. 88 123509/1-123509/3. 

Kim, H. Cho, K. Kim, D.-W. Lee, H.-R. Kim, S. 2006. Bottom-and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals. Appl. Phys. Lett. 89 173107-173110. 

Hur, S. H. et al. 2005. Printed thin-film transistors and complementary logic gates that use polymer-coated single-walled carbon nanotube networks. J. Appl. Phys. 98 114302. 

On the polymer thin-film gate a voltage, VG, and source-drain voltage, VsD, were applied from 0 to - 80 V. The drain current on the thin-film transistor was as low as -0.8 pA with a Vc, of -80 V and VSD of -60 V. Experimental results are summarized in Table 2. 

Here, 41 indicates the thin film transistors, 51 the substrate, 43 a dielectric layer, 49 polysilicon gates, 50 gate electrodes, 55 contact plugs, 56 bottom electrodes, 53 the planarization layer, 54 the mercury cadmium telluride layer and 57 the top electrode layer. The planarization layer is formed from silicon oxide, silicon nitride, silicon oxide nitride or from a polyimide. The planarization layer may be formed as a double or triple layer. 

Fig. 1.3. Schematic view of the structure of organic thin film transistors. Both structures are top-gated, (a) Bottom contact (BC) (b) Top contact (TC).

Fig. 4.2. Schematic diagrams of bottom-gate, top-contact (a) and bottom-gate, bottom-contact (b) thin film transistor test configurations.

Thin-film transistors (TFTs) are among the key building blocks of these circuits [2]. Figure 10.1 shows a cross-sectional view of a TFT. A thin insulating film (i.e. the gate dielectric) isolates source and drain electrodes and a semiconductor layer... 

Fig. 13.1. Schematic structure of the organic thin-film transistor. Starting from the bottom, the transistor consists of the following layers substrate (brown), gate electrode G, (yellow), gate insulator layer (red), the source, S, and drain, D, electrodes (yellow), semiconductor (grey).

Fig. 15.2. AIM-SPICE simulation of a mediocre pentacene thin film transistor. A. Drain current as a function of gate-source voltage. B. Drain current as a function of drain voltage.

G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, Temperature and gate voltage dependence of hole mobility in polycrystalline oligofhiophene thin film transistors , Journal of Applied Physics 87, 4456 (2000). 

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