Sputtering ion implantation

In the worker health study commissioned by the Semiconductor Industry Association (SIA), the University of California study team looked at physical agents such as radioff equency (RF) radiation, and extremely low fi equency magnetic fields (ELF-MF) which arise from the use of electrical current, fifi They defined various ELF exposure parameters based on both fab and non-fab devices or equipment that might have a relevant ELF-MF. In the fab category they included ion implanters, sputterers, epitaxial reactors, diffusion furnaces, other furnaces, microscopes, fluorescent microscopes, and etchers/ashers. In the non-fab devices category they included microscopes, fluorescent microscopes, final test and probers. Figure 3 provides a box plot of the area levels for ELF-MF that were measured by the researchers during site visits. 

Physical vapor deposition includes ion implantation, sputtering, evaporation, and ion plating surface modification treatments. 

These ion implantation sputtering techniques carmot be used on large size complex-shape substrates. Hot-dipping is also not an option for most of the alurrtinirrm alloys because of their high heat sensitivity. An attractive alternative... 

PVD methods differ in the means for producing the metal vapor and the details of plasma creation. The primary PVD methods are ion plating, ion implantation, sputtering, and laser surface allo5dng. 

Ion implantation (qv) has a large (10 K/s) effective quench rate (64). This surface treatment technique allows a wide variety of atomic species to be introduced into the surface. Sputtering and evaporation methods are other very slow approaches to making amorphous films, atom by atom. The processes involve deposition of a vapor onto a cold substrate. The buildup rate (20 p.m/h) is also sensitive to deposition conditions, including the presence of impurity atoms which can faciUtate the formation of an amorphous stmcture. An approach used for metal—metalloid amorphous alloys is chemical deposition and electro deposition. 

Catalysis. Ion implantation and sputtering in general are useful methods for preparing catalysts on metal and insulator substrates. This has been demonstrated for reactions at gas—soHd and Hquid—soHd interfaces. Ion implantation should be considered in cases where good adhesion of the active metal to the substrate is needed or production of novel materials with catalytic properties different from either the substrate or the pure active metal is wanted (129—131). Ion beam mixing of deposited films also promises interesting prospects for the preparation of catalysts (132). 

There are, however, continuing difficulties for catalytic appHcations of ion implantation. One is possible corrosion of the substrate of the implanted or sputtered active layer this is the main factor in the long-term stabiHty of the catalyst. Ion implanted metals may be buried below the surface layer of the substrate and hence show no activity. Preparation of catalysts with high surface areas present problems for ion beam techniques. Although it is apparent that ion implantation is not suitable for the production of catalysts in a porous form, the results indicate its strong potential for the production and study of catalytic surfaces that caimot be fabricated by more conventional methods. 

Figure 3a Unprocessed depth profile (secondary ion intensity versus sputtering time) of a silicon sample containing a boron ion implant.

An important recent trend is the tendency for the two processes, CVD andPVD, to merge. For instance, CVD now makes extensive use of plasma (a physical phenomenon) and reactive PVD (evaporation or sputtering) occurs in a chemical environment. Much ofthenew equipment reflects this process integration in the concept of cluster tools which may incorporate CVD, etching, sputtering, and ion implantation in one piece of equipment. 

The synthesis of MNCGs can be obtained by sol-gel, sputtering, chemical vapor-deposition techniques. Ion implantation of metal or semiconductor ions into glass has been explored since the last decade as a useful technique to produce nanocomposite materials in which nanometer sized metal or semiconductor particles are embedded in dielectric matrices [1,2,4,23-29]. Furthermore, ion implantation has been used as the first step of combined methodologies that involve other treatments such as thermal annealing in controlled atmosphere, laser, or ion irradiation [30-32]. 

The talk will briefly review some of these developments ranging from high temperature equilibrium plasmas to cool plasmas, PECVD, ion implantation, ion beam mixing and ion assisted etching and deposition. Brief consideration will also be given to sputtering and ionised cluster beam deposition techniques in inorganic synthesis. 

A wide variety of process-induced defects in Si are passivated by reaction with atomic hydrogen. Examples of process steps in which electrically active defects may be introduced include reactive ion etching (RIE), sputter etching, laser annealing, ion implantation, thermal quenching and any form of irradiation with photons or particles wih energies above the threshold value for atomic displacement. In this section we will discuss the interaction of atomic hydrogen with the various defects introduced by these procedures. 

Other coating processes involving fluoridated apatite have been investigated to improve the long-term adhesion and promote osteointegration of cementless titanium-based metal implants pulsed laser deposition, electron beam deposition and ion beam sputter deposition techniques, and sol-gel methods, for example. They lead to fluor-containing calcium phosphates (apatites in most cases) with different compositions and crystallinity states. 

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