Implant resistance

In implant resistance welding, an electrically resistive element that is placed at the joint interface is heating by either direct or alternating current [2], The resistive implant may be as simple as a nichrome or stainless steel wire or mesh. More complex implants can be tapes of braided metallic wire with thermoplastic monofilaments or a composite of polymer matrix with electrically conductive particles or fibers. As shown in Fig. 26.26, during implant induction welding, the resistive implant is placed between the two parts. Electric current is then passed for a preset time through the resistance implant while the parts are under pressure. Then the current flow stops and the parts are kept under pressure while the weld cools, and the implant remains at the joint interface. 

Electrical Resistivity and Superconducting Transition Temperature Increases in the electrical resistivities at RT (Prt) and 11 K (po) in N-implanted ZrN films at both RT and HT are shown in Fig. 9 as a function of the implanted N atom concentration. Although we can see higher resistivities with an increasing N atom concentration, full insulating properties were not reached even up to the final implantation concentration of x = 0.33 with both RT and HT implantations. Resistivities in the samples implanted at HT exceed considerably those in the samples for RT implantation in the initial implantation processes. They showed, however, rather constant values at x = 0.22 and smaller values than those for RT implantation at the final implantation step with x = 0.33. Semiconducting behavior in resistivities where the Po is in excess of Prt was observed beyond x = 0.25 for RT implantation and beyond x = 0.15 for HT implantation. 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

Step 3. Boron is ion implanted around the perimeter of the resist-protected area to form a "typ isolation border (the channel stopper or chanstop). The boron cannot penetrate through the resist. 

Step 8. The -type source and drain regions are created by As ion implantation. The As can penetrate the thin gate oxide, but not the thick field oxide or the polysihcon gate. The formation of the source and gate does not require a separate resist pattern, thus this technique is called self-aligning. 

Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final...

These processes are considerably more complex in actual CMOS fabrication. First, the lower layers of a CMOS stmcture typically have a twin-tub design which includes both PMOS and NMOS devices adjacent to each other (see Fig. 3b). After step 1, a mask is opened such that a wide area is implanted to form the -weU, followed by a similar procedure to create the -weU. Isolation between active areas is commonly provided by local oxidation of sihcon (LOCOS), which creates a thick field oxide. A narrow strip of lightly doped drain (LDD) is formed under the edges of the gate to prevent hot-carrier induced instabiUties. Passivation sidewalls are used as etch resists. A complete sequence of fabrication from wafer to packaged unit is shown in Figure 10. 

High temperature fatigue and fretting fatigue behavior has also been improved by implantation (113,114). This has been achieved by using species that inhibit oxidation or harden the surface. It is generally accepted that fretting behavior is closely coimected to oxidation resistance, perhaps due to third party effects of oxidation products. Oxidation resistance alone has also been improved by ion implantation (118—120). 

The following mechanisms in corrosion behavior have been affected by implantation and have been reviewed (119) (/) expansion of the passive range of potential, (2) enhancement of resistance to localized breakdown of passive film, (J) formation of amorphous surface alloy to eliminate grain boundaries and stabilize an amorphous passive film, (4) shift open circuit (corrosion) potential into passive range of potential, (5) reduce/eliminate attack at second-phase particles, and (6) inhibit cathodic kinetics. 

Ion implantation has also been used for the creation of novel catalyticaHy active materials. Ruthenium oxide is used as an electrode for chlorine production because of its superior corrosion resistance. Platinum was implanted in mthenium oxide and the performance of the catalyst tested with respect to the oxidation of formic acid and methanol (fuel ceU reactions) (131). The implantation of platinum produced of which a catalyticaHy active electrode, the performance of which is superior to both pure and smooth platinum. It also has good long-term stabiHty. The most interesting finding, however, is the complete inactivity of the electrode for the methanol oxidation. 

Polymers. Ion implantation of polymers has resulted in substantial increases of electrical conductivity (140), surface hardness (141), and surface texturing (142). A four to five order of magnitude increase in the conductivity of polymers after implantation with 2 MeV Ar ions at dose levels ranging from 10 -10 ions/cm has been observed (140). The hardness of polycarbonate was increased to that of steel (141) when using 1 MeV Ar at dose levels between 10 -10 ions/cm. Conductivity, oxidation, and chemical resistance were also improved. Improvements in the adhesion of metallizations to Kapton and Teflon after implantation with argon has been noted (142). 

The improvement in wear resistance from ion implantation is shown in Figure 10 (20). However, the thin case cannot sustain very heavy loads. Hence this application for improved wear resistance is limited to special situations, eg, low loads. 

Bicomponent technology has been used to introduce functional and novelty effects other than stretch to nylon fibers. For instance, antistatic yams are made by spinning a conductive carbon-black polymer dispersion as a core with a sheath of nylon (188) and as a side-by-side configuration (189). At 0.1—1.0% implants, these conductive filaments give durable static resistance to nylon carpets without interfering with dye coloration. Conductive materials such as carbon black or metals as a sheath around a core of nylon interfere with color, especially light shades. 

The materials used in a total joint replacement ate designed to enable the joint to function normally. The artificial components ate generally composed of a metal piece that fits closely into bone tissue. The metals ate varied and include stainless steel or alloys of cobalt, chrome, and titanium. The plastic material used in implants is a polyethylene that is extremely durable and wear-resistant. Also, a bone cement, a methacrylate, is often used to anchor the artificial joint materials into the bone. Cementiess joint replacements have mote tecentiy been developed. In these replacements, the prosthesis and the bone ate made to fit together without the need for bone cement. The implants ate press-fit into the bone. 

Biomaterials. Just as stem designs have evolved in an effort to develop an optimal combination of specifications, so have the types of metals and alloys employed in the constmction of total joint implants. Pure metals are usually too soft to be used in prosthesis. Therefore, alloys which exhibit improved characteristics of fatigue strength, tensile strength, ductihty, modulus of elasticity, hardness, resistance to corrosion, and biocompatibiUty are used. 

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