Voltage source-drain

To be consistent with common equations for NMOS transistors, the polarities of the applied voltages have been inverted. The source-gate voltage is denoted Vsg, the source-drain voltage Vsj, and the threshold voltage Vf. Equation (4.3) corresponds to... 

Replacing the respective variables in Eq. (4.3) using the Eqs. (4.5), (4.6), (4.7) and (4.8), a temperature-dependent MOS transistor model is obtained. This temperature-dependent model provides a term for the source-drain current depending on the source-gate voltage, the source-drain voltage, and the temperature. 

Fig. 4.19. Comparison between measured T-versus-Vsg characteristics and the MOSFET-heater model data for a source-drain voltage of 5 V...

For an OFET, the dependence of the drain current / on the source-drain voltage Vd and the source-gate voltage Vb is described hy the classical equations derived from inorganic-hased thin him transistors (Horowitz, 1998) ... 

On the polymer thin-film gate a voltage, VG, and source-drain voltage, VsD, were applied from 0 to - 80 V. The drain current on the thin-film transistor was as low as -0.8 pA with a Vc, of -80 V and VSD of -60 V. Experimental results are summarized in Table 2. 

Fig. 12. Square root of source-drain current plotted against source-drain voltage, with gate and drain connected together, for various temperatures. [From Mackenzie el al. (1983).]...

Figure 5.15 Au-nitro-BDT-Au molecular orbitals as a function of source-drain voltage [sf = —1.35 eV). Orbital 48 is shown in the left column, orbital 49 in the right column.

Figure 5.21 Molecular orbital picture for the Au-nitro-BDT-Au molecular wire at the peak (Vsd = 0.4 eV) and valley (ysd = 0.9 eV) values of the source-drain voltage.

Figure 2. (a) Schematic cross section of an organic field-effect transistor (OFET). (b) Schematic cross section of an organic electrochemical transistor (OECT). The applied source-drain voltage Vd and gate voltage Vg are also shown. 

The time of flight (TOF) method has been described in Section 8.4.1. The FET mobility, FE, is obtained from the characteristic of a field effect transistor constructed with the conjugated polymer as the conduction channel see below. With source-drain voltages larger than the gate voltage the source-drain current, Jsd, saturates and is given by ... 

Fig. 8.12. Nanoelectronic devices (a) Schematic diagram [163] for a carbon NT-FET. Vsd, source-drain voltage Vg, gate voltage. Reproduced from ref [163], with permission, (b) Scanning tunneling microscope (STM) picture of a SWNT field-effect transistor made using the design of (a) the aluminum strip is overcoated with aluminum oxide, (c) Image and overlaying schematic representation for the effect of electrical pulses in removing...

Figure 12. The typical tunnel curve of the dipole dot as function of its coordinate and the source-drain voltage bifurcates at a threshold voltage a single well is replaced by a double well followed by a wide well.

The overlap of the wave functions oscillates at a frequency A = A/ ps Ar. For weak superconductors, the tunneling frequency A is controlled by the source drain voltage. The alternating current (ac) is zero below the threshold voltage and it oscillates after the threshold with an amplitude growing with the bias... 

Figure 21.4 Potential profiles of source-drain structures at applied source-drain voltage measurements performed in ambient air. Electrode material was a) carbon black and b) colloidal grapbite.

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