Pentacene thin films

Minakata, T. and Natsume, Y. (2005) Direct formation of pentacene thin films by solution process. Syn. Met., 153, 1—4. 

Klauk H, Halik M, Zschieschang U, Schmid G, Radlik W, Weber W (2002) High-mobility polymer gate dielectric pentacene thin film transistors. J Appl Phys 92(9) 5259-5263... 

Pentacene thin films grown with PLD under vacuum ( 10 Torr) and at substrate temperatures ranging from 300 to 473 Khave been obtained using again a KrF excimer laser (248 nm), operated at 50 Hz and with a power of 6-8 W. Relatively... 

Ruiz R, Papadimitratos A, Mayer AC, Maliiaras GG (2005) Thickness dependence of mobility in pentacene thin film transistors. Adv Mater 17 1795-1798... 

Park B-N, Seo S, Evans PG (2007) Channel formation in single-monolayer pentacene thin film transistors. J Phys D 40 3506-3511... 

Kagan CR, Afzali A, Graham TO (2005) Operational and environmental stability of pentacene thin film transistors. Appl Phys Lett 86 193505... 

Meyer zu Heringdorf F-J, Reuter MC, Tromp RM (2001) Growth dynamics of pentacene thin films. Nature 412 517-520... 

Fig. 2.7. Two sets of AFM topographs of pentacene thin films of different coverage. The left two columns, from Kalb et al. [51], compare untreated dielectrics with SAM-modified dielectrics - much greater nucleation density and smaller grain sizes are observed for the SAMs. Coverage, from the top down 0.5, 3, 6, 30 nm image size is 4 pm x 4 pm. Topographs in the right column, from Kelley et al. [7c], show pentacene thin films grown on SAMs. Coverage, from the top down 1, 3.5,...

Fig. 15.2. AIM-SPICE simulation of a mediocre pentacene thin film transistor. A. Drain current as a function of gate-source voltage. B. Drain current as a function of drain voltage.

D. Knipp, R. A. Street, A. Volkel, J. Ho, Pentacene thin film transistors on inorganic dielectrics Morphology, structural properties, and electronic... 

The channel layer is 50-nm-thick pentacene deposited in the vacuum sublimation system at ambient substrate temperature with fine metal masks. After deposition of pentacene thin film, 30-nm-thick gold layers are deposited as source and drain though fine metal masks. 

Z.-T. Zhu, J. T. Mason, R. Dieckmann, and G. G. Maeeiaras, Humidity sensors based on pentacene thin-film transistors ,... 

F. De Angelis, L. Mariucci, S. Cipolloni, G. Fortunato, Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layer, Journal of Non-Crystalline Solids 352 (2006) 1765-1768. 

Mohammad Mottaghi, Gilles Horowitz, Field-induced mobility degradation in pentacene thin-film transistors, Organic Electronics (2006), article in press, available on-line at Science Direct. 

D. Guo, S. Ikeda, K. Saiki, H. Miyazoe, K. Terashima, Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors, J. Appl. Phys. 99 (2006) 094502. 

Chang JB, Subramanian V. (2006) Effect of active layer thickness on bias stress effect in pentacene thin-film transistors. Appl Phys Lett 88 233513. 

H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, and W. Weher, High-mohility polymer gate dielectric pentacene thin film transistors, J. Appl. Phys. 92(9), 5259-5263 (2002). 

The initial stage of pentacene thin film growth on Si02 can be described by diffusion limited aggregation (DLA) [ 15]. In this growth mode, incoming mole-... 

The most simple pentaeene OTFT test structure used in many labs is based on a Si wafer piece covered with a thermal oxide. Here, the heavily doped Si wafer takes the role of the back gate electrode, and the Si02 takes the role of the gate dielectric. A pentacene thin film is deposited as the semiconducting layer. Source and drain electrodes are deposited either on the silicon oxide (bottom contact) or on top of the pentacene film (top contact). 

Figure 15.8 Absorption spectra. Wavelength dependency of the absorption of a 50 nm pentacene thin film on glass.

Lugli, and B. Nickel, Spatially Resolved Photoresponse Measurements on Pentacene Thin-Film Transistors. 

Ruiz, R. et ah. Structure of pentacene thin films, Appl. Phys. Lett., 85, 4926, 2004. Menard, E., Marchenko, A., Podzorov, V., Gershenson, M. E., Eichou, D., and Rogers,... 

Ostroverkhova, O. et al., Bandhke transport in pentacene and functionalized pentacene thin films revealed by subpicosecond transient photoconductivity measurements, Phys. Rev. B, 71, 035204, 2005. 

Necliudov, P. V. et al., Contact resistance extraction in pentacene thin film transistors, Solid-State Electron., 47, 259, 2003. 

Pesavento, PV, Chesterfield, R.J., Newman, C.R. and Frisbie, C.D., Gated four-probe measurements on pentacene thin-film transistors Contact resistance as a function of gate voltage and temperature, J. Appl. Phys., 96, 7312-7324, 2004. 

Pesavento, P.V. et al., Film and contact resistance in pentacene thin-film transistors Dependence on film thickness, electrode geometry, and correlation with hole mobility,... 

Puntambekar, K.P., Pesavento, P.V, and Frisbie, C.D., Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy, Appl. Phys. Lett., 83, 5539, 2003. 

Ruiz, R. et al., Pentacene thin film growth, Chem. Mater 16 (23), 4497A 508, 2004. 

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