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Contrast curve

Here is where it can be confusing as to what is exactly going on. These arrows do not represent an actual process (such as electrons moving). This is an important point, because you will leam later about curved arrows used in drawing reaction mechanisms. Those arrows look exactly the same, but they actually do refer to the flow of electron density. In contrast, curved arrows here are used only as tools to help... [Pg.21]

Figure 3 Representative contrast curves for a) positive resists and b)... Figure 3 Representative contrast curves for a) positive resists and b)...
Figure 8. Deep UV contrast curves for poly(DMBZMA-co-MST) containing 4.78 wt% of PhjS+SbF thickness measured ( ) after postbake, ( ) after development with 400K/H20= 1/4, and (A) after development with anisole. Figure 8. Deep UV contrast curves for poly(DMBZMA-co-MST) containing 4.78 wt% of PhjS+SbF thickness measured ( ) after postbake, ( ) after development with 400K/H20= 1/4, and (A) after development with anisole.
Figure 7. Stepwedge lithographic contrast curves for PCHMS irradiated at 254 nm. Figure 7. Stepwedge lithographic contrast curves for PCHMS irradiated at 254 nm.
Figure 2 Typical lithographic response (contrast) curves for (a) positive and (b) negative resists. Figure 2 Typical lithographic response (contrast) curves for (a) positive and (b) negative resists.
Contrast curves were obtained for each resist by measuring the thickness after development of a series of 1 mm by 5 mm exposed areas the exposure dose typically varied from approximately 1 mJ/ cm2 to several J/cm2 for the slowest resists. The majority of the resists were developed in ethyl acetate for 30 to 60 sec followed by a 20-sec rinse in 2-propanol. Initially, THF or a THF/2-propanol mixture was used as the developer they were replaced by ethyl acetate because it provided superior contrast. Resist sensitivity was taken to be the incident dose which resulted in 50% exposed thickness remaining after development, Dg 5. This is the standard convention for a negative resist. [Pg.180]

As expected, the incorporation of pendant unsaturation in the resists greatly enhances sensitivity as demonstrated by a comparison of the contrast curves for poly(N-aiiyl maleimide-VBC) and the structurally similar poiy(N-ethyl maleimide-VBC) (Figure 4). Both polymers have similar molecular weights and nearly identical mass absorption coefficients but the allyl-containing copolymer is 5X faster. [Pg.181]

The effect of increased x-ray absorption on sensitivity was explored by conducting monochromatic exposures of a bromine-containing resist, poly(N-allyl maleimide-vinyl benzyl bromide), at photon energies which bracket the bromine absorption edges between 1.6 and 1.8 keV contrast curves obtained for these monochromatic exposures are shown in Figure 7. The results are also plotted as l/D "5 vs absorption coefficient in Figure 8 the data accurately follow the predicted inverse relationship defined by Equation 1. [Pg.181]

For uniform large area exposure such as one encounters in the determination of the contrast curve, the incident electron energy dissipation density depends only on the depth z into the resist. Explicitly, it can be written in the form (47,48)... [Pg.55]

The resist formulation was spin-coated onto a silicone wafer on which a bottom antireflective coating had been previously applied and then soft-baked for 60 seconds at 90°C on a hot plate to obtain a film thickness of 1000 nm. The resist film was then exposed to i-line radiation of 365 nm through a narrowband interference filter using a high-pressure mercury lamp and a mask aligner. Experimental samples were then baked for 60 seconds at 90°C on a hot plate and developed. The dose to clear, E0, which is the dose just sufficient to completely remove the resist film after 60 seconds immersion development in 2.38% aqueous tetramethyl ammonium hydroxide, was then determined from the measured contrast curve. Testing results are provided in Table 1. [Pg.591]

A variety of techniques have been used in the present work to establish the relative sensitivity of positive electron-beam resists made from copolymers of maleic anhydride (Table I). The term sensitivity is used rather loosely at times. In the most practical sense, sensitivity is a comparative measure of the speed with which an exposure can be made. Thus, the exposure conditions, film thickness, developing solvent and temperature may be involved. Most often, the contrast curve is invoked as a more-or-less objective measure of sensitivity. The dose needed to allow removal of exposed film without removing more than about 70% of the unexposed film can be a measure of sensitivity. The initial film thickness and the developing conditions still must be specified so that this measure is not, strictly speaking, an intrinsic property of the polymeric material. [Pg.324]

Another measure of sensitivity can be obtained from the rate of dissolution of exposed versus unexposed film at various doses. The amount of energy needed to obtain some arbitrary ratio of rates or the exponent of the dissolution rate ratio versus dose at high doses may be used. In the present study, both a contrast curve and a solubility rate ratio versus dose data are reported for the copolymer of maleic anhydride with alphamethylstyrene. However, these tests are burdensome when many materials are to be screened... [Pg.324]

Figure 2. Contrast curve for the copolymer of Figure 1. Films were cast from methyl cellosolve acetate, prebaked at 120°C (in vacuum), and developed using a mixture of ethyl and methyl cellosolve acetates. Incident doses of 20 keV electrons were imposed on a film about one micrometer thick. Figure 2. Contrast curve for the copolymer of Figure 1. Films were cast from methyl cellosolve acetate, prebaked at 120°C (in vacuum), and developed using a mixture of ethyl and methyl cellosolve acetates. Incident doses of 20 keV electrons were imposed on a film about one micrometer thick.
The non-equilibrium particle distribution is clearly observed through the joint correlation functions plotted in Fig. 6.47. Note that under the linear approximation [74] the correlation function for the dissimilar defects Y (r, t) increases monotonically with r from zero to the asymptotic value of unity Y(r —y oo,t) = 1. In contrast, curve 1 in Fig. 6.47 (f = 101) demonstrates a maximum which could be interpreted as an enriched concentration of dissimilar pairs, AB, near the boundary of the recombination sphere, r tq. With increasing time this maximum disappears and Y(r, t) assumes the usual smoothed-step form. The calculations show that such a maximum in Y(r, t) takes place within a wide range of the initial defect concentrations and for a random initial distribution of both similar and dissimilar particles used in our calculations X (r, 0) = Y(r > 1,0) = 1. The mutual Coulomb repulsion of similar particles results in a rapid disappearance of close AA (BB) pairs separated by a distance r < L (seen in Fig. 6.47 as a decay of X (r, t) at short r with time). On the other hand, it stimulates strongly the mutual approach (aggregation) of dissimilar particles leading to the maximum for Y(r, t) at intermediate distances observed in Fig. 6.47. [Pg.381]

In contrast, curve (b) in Fig. 12.12 demonstrates the dependence for the diluted fixed-bed reactor in which a higher equilibrium conversion can be achieved (cf. Figs. 12.1 and 12.10). For lower Da numbers, due to the lower rates of the forward reaction, the conversion falls in the diluted fixed-bed reactor below the corresponding value in the conventional reactor. [Pg.377]

Figure 1. Contrast curves for x-ray, flood-exposed films developed one minute in indicated mixtures of isoproply alcohol and methyl isobutyl ketone, (a) PMMA and (b) CO PMMA, 1 2. Figure 1. Contrast curves for x-ray, flood-exposed films developed one minute in indicated mixtures of isoproply alcohol and methyl isobutyl ketone, (a) PMMA and (b) CO PMMA, 1 2.

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See also in sourсe #XX -- [ Pg.135 , Pg.180 , Pg.182 ]

See also in sourсe #XX -- [ Pg.69 , Pg.70 ]




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Resist contrast curves

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