Device structure and operation

The organic field effect transistor (OFET) acts essentially as an electronic valve by modulating the semiconductor channel conductance via the gate field. This device is essential in all electronic applications, including integrated circuits for memories and sensors and also to drive individual pixels in active matrix displays. Probably one of the most exciting applications of organic electronic circuits is in the supply chain area, where radiofrequency-powered elements (e.g. RFID tag) may replace ID barcodes for identification and be applicable as a backplane drive for displays. 

Note that the organic semiconductor used in OFETs should not be intentionally doped. Consequently, the semiconductor carrier concentration is very low, usually 10 cm . When a voltage is applied 

TOP-CONTACT, BOTTOM-GATE BOTTOM-CONTACT, BOTTOM-GATE 

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Such changes in the defect population can be critical in device manufacture and operation. For example, a thin him of an oxide such as SiO laid down in a vacuum may have a large population of anion vacancy point defects present. Similarly, a him deposited by sputtering in an inert atmosphere may incorporate both vacancies and inert gas interstitial atoms into the structure. When these hlms are subsequently exposed to different conditions, for example, moist air at high temperatures, changes in the point defect population will result in dimensional changes that can cause the him to buckle or tear. 

Examples of fact issues include disputes regarding the structure and operation of the accused device, the teachings of the prior art and level of skill in the art, and the amount of damages sustained on account of the infringement. Examples of legal issues include claim interpretation, and whether the prior art prevents infringement under the doctrine of equivalents. 

Recently, Cree Research Inc. reported on the first p-channel 6H-SiC MOSFET [6]. The device structure and output characteristics are shown in FIGURES 8 and 9, respectively. The device current and transconductance are very small (76 pA mm 1 at 40 V of drain bias and 16 pS mm 1, respectively, for a 7 pm gate length device). The performance of this device was limited by a large parasitic series resistance. Nevertheless, even these preliminary results show the feasibility of SiC CMOS technology, capable of operating at elevated temperatures. 

Tables 6-9 give the device structures and performance metrics for monochromatic OLEDs that utilize organometallic emitters. Eigures 38-42 show the molecular structures for the various materials used in these devices. White OLEDs have also been prepared with these materials, but these will be discussed in a later section. Light-emitting electrochemical cells are treated in a separate section as well, since the finished devices have different operating characteristics than either of the other solution or vapor processed devices. Table 6 lists devices made solely with discrete molecular materials, while Table 7 gives data for devices made using polymeric materials. The only exception to the use of discrete molecular materials in Table 6 is for devices that use a conducting polymer, poly(3,4-ethylenedioxythiophene polystyrene sulfonate) (PEDOT), as a material to enhance the efficiency for hole injection into the organic layer. The mode of preparation for a given device is listed with the device parameters in the...

Generally microfluidic devices for synthesizing composite nanoparticles can be mainly grouped into four categories fast mixing flow, segmented microfluidic, steady laminar flow, and multistep reactions (can be combined by the three aforementioned devices). The basic structures and operation mode are shown in Fig. 2. These different strategies are reviewed in this section. 

The polymer memory device has a simple device structure and can have very high density when high-density electrodes are fabricated. The device structure can be even simpler, and the density can be pushed to very high values, when the operation of the device is combined with an atomic force microscope (AFM). A schematic operation configuration for this device is shown in Figure 8.6. The device was fabricated by one step the polymer film was spin coated on a conductive substrate. The conductive substrate was used as the bottom electrode whereas an AFM tip as the top electrode. 

LCDs [33]. Figure 9.7 shows the schematic structure and operating principles of the LC gel-based transflective LCD. The device is composed of an LC gel cell, two quarter-wave films, a transflector, a polarizer, and a backlight. The cell was filled with homogeneously aligned nematic LC and monomer mixture. After UV-induced polymerization, polymer networks are formed and the LC molecules are eonfined within the polymer networks. 

Polymer-Metal Interfaces. Researches on polymer-metal interfaces is designed to understand the electronic structure of the polymer surface and the interface with other polymers, semiconductors, and metals, in order to maintain and control the chemistry of the interface during device fabrication and operation [198-206]. 

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