Point defects vacancies

Such changes in the defect population can be critical in device manufacture and operation. For example, a thin him of an oxide such as SiO laid down in a vacuum may have a large population of anion vacancy point defects present. Similarly, a him deposited by sputtering in an inert atmosphere may incorporate both vacancies and inert gas interstitial atoms into the structure. When these hlms are subsequently exposed to different conditions, for example, moist air at high temperatures, changes in the point defect population will result in dimensional changes that can cause the him to buckle or tear. 

Fig. 8.16. Model of the (110) surface of rutile showing two kinds of anion vacancy point defects (after Henrich, 1983 reproduced with the publisher s permission).

Fig 4 Model of the corundum (1012) surface, including a [0221 ] step to another (1012) terrace, and an 0-vacancy point defect... 

Fig. 5. Model of the rutile (110) surface. Two types of O-vacancy point defect are shown.

An obvious example of the strong effect that chemisorbed molecules can have on surface properties can be seen in Figs. 6 and 7 above for O-vacancy point defects on Ti02. In Fig. 7, the band of electron emission just below Ep originates from electrons trapped in d-orbitals on Ti cations adjacent to the defect. When the reduced surface is exposed to O2 at room temperature, the defect bandgap emission band almost completely vanishes the photoemission spectra look very similar to those from the stoichiometric surface in Fig. 6. In this simple case, it is believed that O2 dissociates at O-vacancy defect sites, removing electrons from the adjacent cations in order to become 0 ions. 

The threshold behavior seen in Fig. 8 suggests that CO does not react readily with the nearly defect-free stoichiometric surface, but that some O ions must be removed, forming 0-vacancy point defects, before a significant reaction can... 

The concept of defects came about from crystallography. Defects are dismptions of ideal crystal lattice such as vacancies (point defects) or dislocations (linear defects). In numerous liquid crystalline phases, there is variety of defects and many of them are not observed in the solid crystals. A study of defects in liquid crystals is very important from both the academic and practical points of view [7,8]. Defects in liquid crystals are very useful for (i) identification of different phases by microscopic observation of the characteristic defects (ii) study of the elastic properties by observation of defect interactions (iii) understanding of the three-dimensional periodic structures (e.g., the blue phase in cholesterics) using a new concept of lattices of defects (iv) modelling of fundamental physical phenomena such as magnetic monopoles, interaction of quarks, etc. In the optical technology, defects usually play the detrimental role examples are defect walls in the twist nematic cells, shock instability in ferroelectric smectics, Grandjean disclinations in cholesteric cells used in dye microlasers, etc. However, more recently, defect structures find their applications in three-dimensional photonic crystals (e.g. blue phases), the bistable displays and smart memory cards. 

To understand the behavior of electronic ceramics, we need to understand the relationship between the observed material properties and the underlying physical phenomena responsible for those properties. For example, the presence of oxygen vacancy point defects in Zr02 ceramics leads to their use as oxygen sensors in... 

Studies of Cu-bearing alloys have shown a high density of scattering centres that were absent in the Cu-free control alloy irradiated under identical conditions. These centres were identified as three-dimensional aggregates, < 1.5 nm in diameter, which could comprise either Cu atoms alone or in combination with vacancy point defects produced during irradiation. These clusters were believed to be the obstacles to glide dislocation that are responsible for irradiation hardening [61]. 

Atomic vacancies, point defects, and nanometer-sized pores result in the unusual properties of the specimens—they are of lightweight and high strength yet thermally or chemically less stable. 

Strikingly, atomic vacancies, point defects, nanocavities, and nanoporous foams perform very much the same as nanostructures in the enhancement of stiffness (elastic strength) and toughness (plastic strength) and in the depression of thermal... 

Figure 7.5 Shows how a non-bonding molecular hybrid orbital resulting from a vacancy point defect causes deep levels near midgap in Si.

Dislocation theory as a portion of the subject of solid-state physics is somewhat beyond the scope of this book, but it is desirable to examine the subject briefly in terms of its implications in surface chemistry. Perhaps the most elementary type of defect is that of an extra or interstitial atom—Frenkel defect [110]—or a missing atom or vacancy—Schottky defect [111]. Such point defects play an important role in the treatment of diffusion and electrical conductivities in solids and the solubility of a salt in the host lattice of another or different valence type [112]. Point defects have a thermodynamic basis for their existence in terms of the energy and entropy of their formation, the situation is similar to the formation of isolated holes and erratic atoms on a surface. Dislocations, on the other hand, may be viewed as an organized concentration of point defects they are lattice defects and play an important role in the mechanism of the plastic deformation of solids. Lattice defects or dislocations are not thermodynamic in the sense of the point defects their formation is intimately connected with the mechanism of nucleation and crystal growth (see Section IX-4), and they constitute an important source of surface imperfection. 

If tlie level(s) associated witli tlie defect are deep, tliey become electron-hole recombination centres. The result is a (sometimes dramatic) reduction in carrier lifetimes. Such an effect is often associated witli tlie presence of transition metal impurities or certain extended defects in tlie material. For example, substitutional Au is used to make fast switches in Si. Many point defects have deep levels in tlie gap, such as vacancies or transition metals. In addition, complexes, precipitates and extended defects are often associated witli recombination centres. The presence of grain boundaries, dislocation tangles and metallic precipitates in poly-Si photovoltaic devices are major factors which reduce tlieir efficiency. 

Materials that contain defects and impurities can exhibit some of the most scientifically interesting and economically important phenomena known. The nature of disorder in solids is a vast subject and so our discussion will necessarily be limited. The smallest degree of disorder that can be introduced into a perfect crystal is a point defect. Three common types of point defect are vacancies, interstitials and substitutionals. Vacancies form when an atom is missing from its expected lattice site. A common example is the Schottky defect, which is typically formed when one cation and one anion are removed from fhe bulk and placed on the surface. Schottky defects are common in the alkali halides. Interstitials are due to the presence of an atom in a location that is usually unoccupied. A... 

Two point defects may aggregate to give a defect pair (such as when the two vacanc that constitute a Schottky defect come from neighbouring sites). Ousters of defects ( also form. These defect clusters may ultimately give rise to a new periodic structure oi an extended defect such as a dislocation. Increasing disorder may alternatively give j to a random, amorphous solid. As the properties of a material may be dramatically alte by the presence of defects it is obviously of great interest to be able to imderstand th relationships and ultimately predict them. However, we will restrict our discussion small concentrations of defects. 

Fig. 9. Schematic of a two-dimensional cross section of an AgBr emulsion grain showing the surface and formation of various point defects A, processes forming negative kink sites and interstitial silver ions B, positive kink site and C, process forming a silver ion vacancy at a lattice position and positive kink...

The vacant sites will be distributed among the N lattice sites, and the interstitial defects on the N interstitial sites in the lattice, leaving a conesponding number of vacancies on die N lattice sites. In the case of ionic species, it is necessaty to differentiate between cationic sites and anionic sites, because in any particular substance tire defects will occur mainly on one of the sublattices that are formed by each of these species. In the case of vacant-site point defects in a metal, Schottky defects, if the number of these is n, tire random distribution of the n vacancies on the N lattice sites cair be achieved in... 

One feature of oxides is drat, like all substances, they contain point defects which are most usually found on the cation lattice as interstitial ions, vacancies or ions with a higher charge than dre bulk of the cations, refened to as positive holes because their effect of oxygen partial pressure on dre electrical conductivity is dre opposite of that on free electron conductivity. The interstitial ions are usually considered to have a lower valency than the normal lattice ions, e.g. Zn+ interstitial ions in the zinc oxide ZnO structure. 

An effect which is frequently encountered in oxide catalysts is that of promoters on the activity. An example of this is the small addition of lidrium oxide, Li20 which promotes, or increases, the catalytic activity of dre alkaline earth oxide BaO. Although little is known about the exact role of lithium on the surface structure of BaO, it would seem plausible that this effect is due to the introduction of more oxygen vacancies on the surface. This effect is well known in the chemistry of solid oxides. For example, the addition of lithium oxide to nickel oxide, in which a solid solution is formed, causes an increase in the concentration of dre major point defect which is the Ni + ion. Since the valency of dre cation in dre alkaline earth oxides can only take the value two the incorporation of lithium oxide in solid solution can only lead to oxygen vacaircy formation. Schematic equations for the two processes are... 

The third term in Eq. 7, K, is the contribution to the basal plane thermal resistance due to defect scattering. Neutron irradiation causes various types of defects to be produced depending on the irradiation temperature. These defects are very effective in scattering phonons, even at flux levels which would be considered modest for most nuclear applications, and quickly dominate the other terms in Eq. 7. Several types of in-adiation-induced defects have been identified in graphite. For irradiation temperatures lower than 650°C, simple point defects in the form of vacancies or interstitials, along with small interstitial clusters, are the predominant defects. Moreover, at an irradiation temperatui-e near 150°C [17] the defect which dominates the thermal resistance is the lattice vacancy. 

At the beginning of the century, nobody knew that a small proportion of atoms in a crystal are routinely missing, even less that this was not a mailer of accident but of thermodynamic equilibrium. The recognition in the 1920s that such vacancies had to exist in equilibrium was due to a school of statistical thermodynamicians such as the Russian Frenkel and the Germans Jost, Wagner and Schollky. That, moreover, as we know now, is only one kind of point defect an atom removed for whatever reason from its lattice site can be inserted into a small gap in the crystal structure, and then it becomes an interstitial . Moreover, in insulating crystals a point defect is apt to be associated with a local excess or deficiency of electrons. 

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