Contaminant depth

Lateral element distribution, surface contamination, depth profiling. b Hyphenated to chromatographic separation techniques. 

Factors that affect the costs for excavation include the depth of contamination, depth of ground-water (requiring dewatering), and extent of underground infrastructure and/or nearby structures that require shoring. The cost for excavation tends to be higher for areas with deeper contamination, shallower groundwater, and more infrastructures and nearby structures. 

Moisture content of soil Site preparation Depth of contamination Depth to ground water... 

According to DOE research, contaminant depth will be a significant factor in overall project costs. This is due to the costs of installing horizontal or vertical wells. Other contributing factors to ISCOR costs include duration of treatment and the volume/mass of contaminants requiring... 

Cost estimates range from abont 50 to 300/yd ( 65 to 390/m ) depending on site characteristics, particularly the depth of contamination and soil permeability. The more weUs reqnired per unit area (a function of contaminant depth), the higher the cost of remediation (D12529B). 

Initial contaminant concentration Target contaminant concentration Depth of contamination Depth to groundwater Waste quantity... 

Geologic limitations such as the need for an aquiclude and the increasing costs as contaminant depth increases. 

Although the Artesia Yard was not an ideal site for the use of SVE technology, it was the most reasonable alternative, given the depth of contamination and the estimated volume of product that had been released. Excavation to the contamination depth of 55 or 60 feet bgs was not attractive... 

Sometimes primary cementations are not successful, for instance if the cement volume has been wrongly calculated, if cement is lost into the formation or if the cement has been contaminated with drilling fluids. In this case a remedial or secondary cementation is required. This may necessitate the perforation of the casing a given depth and the pumping of cement through the perforations. 

A laser pulse strikes the surface of a specimen (a), removing material from the first layer, A. The mass spectrometer records the formation of A+ ions (b). As the laser pulses ablate more material, eventually layer B is reached, at which stage A ions begin to decrease in abundance and ions appear instead. The process is repeated when the B/C boundary is reached so that B+ ions disappear from the spectrum and C+ ions appear instead. This method is useful for depth profiling through a specimen, very little of which is needed. In (c), less power is used and the laser beam is directed at different spots across a specimen. Where there is no surface contamination, only B ions appear, but, where there is surface impurity, ions A from the impurity also appear in the spectrum (d). 

In many cases, this binary material will not be homogeneous all the way up to the surface, because it is covered with a thin ovedayer of contamination. Therefore, for most real samples, the photoelectrons of interest from atoms A and B are coming from a depth equal to the thickness of the ovedayer, d. In this case. 

Locational considerations include both surficial location and screened interval, ie, the sampling depth. The surficial location is selected based on whether the sample is to represent background quaUty or quaUty at the location of contamination, or potential leak location. In selecting the surficial location, the groundwater flow parameters, velocity and direction, are assumed to be known from other monitoring wells or borings already completed. 

The distribution of impurities over a flat sihcon surface can be measured by autoradiography or by scanning the surface using any of the methods appropriate for trace impurity detection (see Trace and residue analysis). Depth measurements can be made by combining any of the above measurements with the repeated removal of thin layers of sihcon, either by wet etching, plasma etching, or sputtering. Care must be taken, however, to ensure that the material removal method does not contaminate the sihcon surface. 

Design criteria for carbon adsorption include type and concentration of contaminant, hydrauhc loading, bed depth, and contact time. Typical ranges are 1.4—6.8 L/s/m for hydrauhc loading, 1.5—9.1 m for bed depth, and 10—50 minutes for contact time (1). The adsorption capacity for a particular compound or mixed waste stream can be deterrnined as an adsorption isotherm and pilot tested. The adsorption isotherm relates the observed effluent concentration to the amount of material adsorbed per mass of carbon. 

CO oxidation catalysis is understood in depth because potential surface contaminants such as carbon or sulfur are burned off under reaction conditions and because the rate of CO oxidation is almost independent of pressure over a wide range. Thus ultrahigh vacuum surface science experiments could be done in conjunction with measurements of reaction kinetics (71). The results show that at very low surface coverages, both reactants are adsorbed randomly on the surface CO is adsorbed intact and O2 is dissociated and adsorbed atomically. When the coverage by CO is more than 1/3 of a monolayer, chemisorption of oxygen is blocked. When CO is adsorbed at somewhat less than a monolayer, oxygen is adsorbed, and the two are present in separate domains. The reaction that forms CO2 on the surface then takes place at the domain boundaries. 

Similarly, contaminant concentrations in rivers or streams can be roughly assessed based on rate of contaminant introduction and dilution volumes. Estuary or impoundment concentration regimes are highly dependent on the transport mechanisms enumerated. Contaminants may be localized and remain concentrated or may disperse rapidly and become diluted to insignificant levels. The conservative approach is to conduct a more in-depth assessment and use model results or survey data as a basis for determining contaminant concentration levels. 

To remove insoluble contaminants, various types of full-flow filters can be used. Two general types are usually selected surface filters and depth filters. Both types of filters are effective for the removal of particulate matter. 

The depth-type filter elements are used when the oil is free from water, and when particles sizes to be removed are in the five-micron and greater range. Generally, the depth-type element is water-sensitive, and when oil is contaminated with moisture, this element type will absorb the water and produce a rapid increase in differential pressure across the filter. The desired maximum differential pressure across a filter with clean elements is five psig at normal operating temperature. 

Three common uses of RBS analysis exist quantitative depth profiling, areal concentration measurements (atoms/cm ), and crystal quality and impurity lattice site analysis. Its primary application is quantitative depth profiling of semiconductor thin films and multilayered structures. It is also used to measure contaminants and to study crystal structures, also primarily in semiconductor materials. Other applications include depth profilii of polymers, high-T superconductors, optical coatings, and catalyst particles. ... 

The most common application of dynamic SIMS is depth profiling elemental dopants and contaminants in materials at trace levels in areas as small as 10 pm in diameter. SIMS provides little or no chemical or molecular information because of the violent sputtering process. SIMS provides a measurement of the elemental impurity as a function of depth with detection limits in the ppm—ppt range. Quantification requires the use of standards and is complicated by changes in the chemistry of the sample in surface and interface regions (matrix efiects). Therefore, SIMS is almost never used to quantitadvely analyze materials for which standards have not been carefiilly prepared. The depth resoludon of SIMS is typically between 20 A and 300 A, and depends upon the analytical conditions and the sample type. SIMS is also used to measure bulk impurities (no depth resoludon) in a variety of materials with detection limits in the ppb-ppt range. 

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