Chemical vapor deposition transport

Micro-ZNanofabrication for Chemical Sensors, Fig. 5 Schematic diagram showing the processes involved in chemical vapor deposition, transport to the... 

Thermodynamics of Chemical Vapor Deposition - Transport Methods... 

Chemical Vapor Deposition. In chemical vapor deposition (CVD), often referred to as vapor transport, the desired constituent(s) to be deposited are ia the form of a compound existing as a vapor at an appropriate temperature. This vapor decomposes with or without a reducing or oxidizing agent at the substrate— vapor interface for film growth. CVD has been used successfully for preparing garnet and ortho ferrite films (24,25). Laser-assisted CVD is also practiced. 

The epitaxy reactor is a specialized variant of the tubular reactor in which gas-phase precursors are produced and transported to a heated surface where thin crystalline films and gaseous by-products are produced by further reaction on the surface. Similar to this chemical vapor deposition (CVE)) are physical vapor depositions (PVE)) and molecular beam generated deposits. Reactor details are critical to assuring uniform, impurity-free deposits and numerous designs have evolved (Fig. 22) (89). 

The gas-phase methods usually applied to the crystal growth of borides are two chemical vapor deposition (CVD) and chemical vapor transport (CVT). 

Iodide refining, while belonging to the group of processes known as chemical transport processes, is also a good example of the class of processes known as chemical vapor deposition (CVD). 

Silver(I) /3-diketonate derivatives have received significant attention due to the ease with which they can be converted to the elemental metal by thermal decomposition techniques such as metal organic chemical vapor deposition (MOCVD).59 The larger cationic radius of silver(I) with respect to copper(I) has caused problems in achieving both good volatility and adequate stability of silver(I) complexes for the use in CVD apparatus. These problems have been overcome with the new techniques such as super critical fluid transport CVD (SFTCVD), aerosol-assisted CVD (AACVD), and spray pyrolysis, where the requirements for volatile precursors are less stringent. 

In Section 9.3, we focus more on the intrinsic rates for reactions involving solids, since there are some modem processes in which mass transport rates play a relatively small role. Examples in materials engineering are chemical vapor deposition (CVD) and etching operations. We describe some mechanisms associated with such heterogeneous reactions and the intrinsic rate laws that arise. 

Due to the fact that industrial composites are made up of combinations of metals, polymers, and ceramics, the kinetic processes involved in the formation, transformation, and degradation of composites are often the same as those of the individual components. Most of the processes we have described to this point have involved condensed phases—liquids or solids—but there are two gas-phase processes, widely utilized for composite formation, that require some individualized attention. Chemical vapor deposition (CVD) and chemical vapor infiltration (CVI) involve the reaction of gas phase species with a solid substrate to form a heterogeneous, solid-phase composite. Because this discussion must necessarily involve some of the concepts of transport phenomena, namely diffusion, you may wish to refresh your memory from your transport course, or refer to the specific topics in Chapter 4 as they come up in the course of this description. 

This CVD procedure is somewhat different from that used to deposit semiconductor layers. In the latter process, the primary reaction occurs on the substrate surface, following gas-phase decomposition (if necessary), transport, and adsorption. In the fiber optic process, the reaction takes place in the gas phase. As a result, the process is termed modified chemical vapor deposition (MCVD). The need for gas-phase particle synthesis is necessitated by the slow deposition rates of surface reactions. Early attempts to increase deposition rates of surface-controlled reactions resulted in gas-phase silica particles that acted as scattering centers in the deposited layers, leading to attenuation loss. With the MCVD process, the precursor gas flow rates are increased to nearly 10 times those used in traditional CVD processes, in order to produce Ge02-Si02 particles that collect on the tube wall and are vitrified (densified) by the torch flame. 

In Section 3.4.2, we introdnced the concept of chemical vapor infiltration, CVI, in which a chemical vapor deposition process is carried out in a porous preform to create a reinforced matrix material. In that section we also described the relative competition between the kinetic and transport processes in this processing technique. In this section we elaborate npon some of the common materials used in CVI processing, and we briefly describe two related processing techniques sol infiltration and polymer infiltration. 

Nanomaterials are also prepared by chemical vapor deposition (CVD) or chemical vapor condensation (CVC). In these processes, a chemical precursor is converted to the gas phase and then it undergoes decomposition to generate the nanoparticles. These products are then subjected to transport in a carrier gas and collected on a cold substrate, from where they are scraped and collected. The CVC method may be used to produce a variety of powders and fibers of metals, compounds, or composites. The CVD method has been employed to synthesize several ceramic metals, intermetallics, and composite materials. 

Materials processing, via approaches like chemical vapor deposition (CVD), are important applications of chemically reacting flow. Such processes are used widely, for example, in the production of silicon-based semiconductors, compound semiconductors, optoelectronics, photovoltaics, or other thin-film electronic materials. Quite often materials processing is done in reactors with reactive gases at less than atmospheric pressure. In this case, owing to the fact that reducing pressure increases diffusive transport compared to inertial transport, the flows tend to remain laminar. 

C.R. Kleijn. Computational Modeling of Transport Phenomena and Detailed Chemistry in Chemical Vapor Deposition—A Benchmark Solution. Thin Solid Films, 365 294-306,2000. 

C.R. Kleijn and C J. Hoogendoom. A Study of 2- and 3-D Transport Phenomena in Horizontal Chemical Vapor Deposition Reactors. Chem. Engr. Sci., 46(1) 321—334, 1991. 

Chemical vapor deposition (CVD) of thin solid films from gaseous reactants is reviewed. General process considerations such as film thickness, uniformity, and structure are discussed, along with chemical vapor deposition reactor systems. Fundamental issues related to nucleation, thermodynamics, gas-phase chemistry, and surface chemistry are reviewed. Transport phenomena in low-pressure and atmospheric-pressure chemical vapor deposition systems are described and compared with those in other chemically reacting systems. Finally, modeling approaches to the different types of chemical vapor deposition reactors are outlined and illustrated with examples. 

Chemical vapor deposition of thin films involves gas-phase and surface reactions combined with transport processes. Figure 2 gives a schematic rep-... 

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