Brattain

The Shockley involved in this symposium was ihe same William Shockley who had participated in the invention of the transistor in 1947. Soon after that momentous event, he became very frustrated at Bell Laboratories (and virtually broke with his coinventors, Walter Brattain and John Bardeen), as depicted in detail in a rivetting history of the transistor (Riordan and Hoddeson 1997). For some years, while still working at Bell Laboratories, he became closely involved with dislocation geometry, clearly as a means of escaping from his career frustrations, before eventually turning fulltime to transistor manufacture. 

Ohl demonstrated his results to Kelly early in 1940 Kelly felt that his instincts had been proved justified. Thereupon, Bell Labs had to focus single-mindedly on radar and on silicon rectifiers for this purpose. It was not till 1945 that basic research restarted. This was the year that the theorist John Bardeen was recruited, and he in due course became inseparable from Walter Brattain, an older man and a fine experimenter who had been with Bell since the late 1920s. William Shockley formed the third member of the triumvirate, though from an early stage he and Bardeen found themselves so mutually antagonistic that Bardeen was sometimes close to resignation. But tension can be productive as well as depressing. 

The immense importance of Si in transistor technology stems from the chance discovery of the effect in Ge at Bell Telephone Laboratories, New Jersey, in 1947, and the brilliant theoretical and practical development of the device by J. Bardeen, W. H. Brattain and W. Shockley for which they were awarded the 1956 Nobel Prize for Physics. A brief description of the physics and chemistry underlying transistor action in Si is given in the Panel (p. 332). 

Urbana) and W. H. Brattain (Murray Hill) investigations on semiconductors and discovery of the transistor effect. 

The study of electrons trapped in matter (commonly termed solid state ) led eventually to the invention of the transistor in 1947 by Walter Brattain, John Bardeen, and William Shockley at Bell Laboratories, and then to the integrated circuit hy Robert Noyce and Jack Kilby a decade later. Use of these devices dominated the second half of the twentieth century, most notably through computers, with a significant stininlus to development being given by military expenditures. 

The start of the solid-state electronic industry is generally recognized as 1947 when Bardeen, Brattain, and Shockley of Bell Telephone Laboratories demonstrated the transistor function with alloyed germanium. The first silicon transistor was introduced in 1954 by Texas Instruments and, in 1956, Bell Laboratories produced the first diffused junction obtained by doping. The first-solid state transistor diodes and resistors had a single electrical function and were (and still are) known as discrete devices. 

Brattain WH, Garrett CGB (1955) Experiments on the interface between Germanium and an Electrolyte. Bell Syst Tech J 34 129-176... 

Vladimir I. Veselovsky studied the photoelectrochemical behavior of metals covered with oxide layers having semiconductor properties. In 1955, Walter H. Brattain and Charles G. B. Garrett published a paper in which they established the connection between the photoelectrochemical properties of single-crystal semiconductors and their electronic structure. 

However, the principle idea in the studies of that time dealt with assessment of possible changes of inherent properties of a semiconductor caused by its interaction with gaseous phase. In other words, this question was directly linked with problems of quickly developing in that time semiconductor physics. The well known gas cycle of Bardeen-Brattain [81] provides a typical example of the situation of those days. This cycle deals with a opportunity to control the potential of the surface of a semiconductor by adsorption means. 

The theory of the space-charge region in semiconductors was developed by Shottky [87, 88], Mott [89], Davidov [90, 91], Brattain [92] and several other authors. The idea concerning the effect of adsorption on characteristics of SCR of the semiconductor adsorbent was proposed by Hauffe [5, 6]. This theory was developed further by Volkenshtein and his group [4, 93, 94] as well as by Mark [95, 96], Morrison [21] and other scientists. Let us briefly dwell on general features of the model. 

The electrochemical photovoltaic effect was discovered in 1839 by A. E. Becquerelt when a silver/silver halide electrode was irradiated in a solution of diluted HN03. Becquerel also first described the photogalvanic effect in a cell consisting of two Pt electrodes, one immersed in aqueous and the other in ethanolic solution of Fe(C104)3. This discovery was made about the same time as the observation of the photovoltaic effect at the Ag/AgX electrodes. The term Becquerel effect often appears in the old literature, even for denoting the vacuum photoelectric effect which was discovered almost 50 years later. The electrochemical photovoltaic effect was elucidated in 1955 by W. H. Brattain and G. G. B. Garrett the theory was further developed... 

E., Brattain, M. G., Zweibaum, A., Epithelial polarity, villin expression, and enterocytic differentiation of cultured human colon carcinoma cells a survey of twenty cell lines, Cancer Res. 1988, 48, 1936-1942. 

Pearson GL, Brattain WH (1955) Proceedings of the Institute of Radio Engineers 43 1794... 

In 1948 William Bradford Shockley (1910-1989), who is considered the inventor of the transistor, and his associates at Bell Research Laboratories, Walter Houser Brattain (1902-1987) and John Bardeen (1908-1991), discovered that a crystal of germanium could act as a semiconductor of electricity. This unique property of germanium indicated to them that it could be used as both a rectifier and an amplifier to replace the old glass vacuum tubes in radios. Their friend John Robinson Pierce (1910-2002) gave this new solid-state device the name transistor, since the device had to overcome some resistance when a current of electricity passed through it. Shockley, Brattain, and Bardeen all shared the 1956 Nobel Prize in Physics. 

Malik SN, SiuLL, RowinskyEK, deGraffenried L, Hammond LA, Rizzo J, Bacus S, Brattain MG, Kreisberg JI, Hidalgo M (2003) Clin Cancer Res 9 2478... 

Matsushita M, Matsuzaki K, Date M, Watanabe T, Shibano K, Nakagawa T, Yanagi-tani S, Amoh Y, Takemoto H, Ogata N, Yamamoto C, Kubota Y, Seki T, Inokuchi H, Nishizawa M, Takada H, Sawamura T, Okamura A, Inoue K (1999) Br J Cancer 80 194 Brattain MG, Ko Y, Banerji SS, Wu G, Willson JK (1996) J Mammary Gland Biol Neoplasia 4 365... 

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