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Defect-free

Fig. 12 Time based amplitude speetra of a defect free casting part... Fig. 12 Time based amplitude speetra of a defect free casting part...
A resonance in the layered stracture occurs when echoes between two boundaries travel back and forth due to differences in acoustic impedances at the boundaries. For multi-layer structures a number of resonances can be observed depending on their geometry and condition. For each particular defect-free structure and given transducer we obtain a characteristic resonance pattern, an ultrasonic signature, which can be used as a reference. [Pg.108]

The operation is quite simple One sets the frequency to the lowest value, adjusts the gain and phase to the desired sensitivity using a special calibration standard discussed below and performs a zero-compensation on a defect free zone of the standard. Now one is ready to test. As one slides the probe across the surface of an aluminum structure, a signal response will be indicative of the presence of corrosion or of the presence of a subsurface edge. [Pg.286]

The computer also can leam from a defect-free test piece by rutming such a piece in a readmode. For example, if a drilled hole for lubrication purposes is present at the same location on all parts, the computer will recognise this signal and accept it on all test pieces. The computer will actually be comparing the test piece under scrutiny with standard non-defect master. In addition a reference test piece should be used to check that the specified reference defects really will be detected. This is needed to adjust the settings and sensitivity of the system. [Pg.641]

In a defect-free, undoped, semiconductor, tliere are no energy states witliin tire gap. At 7"= 0 K, all of tire VB states are occupied by electrons and all of the CB states are empty, resulting in zero conductivity. The tliennal excitation of electrons across tire gap becomes possible at T > 0 and a net electron concentration in tire CB is established. The electrons excited into tire CB leave empty states in tire VB. These holes behave like positively charged electrons. Botli tire electrons in the CB and holes in tire VB participate in tire electrical conductivity. [Pg.2881]

Secondly, the ultimate properties of polymers are of continuous interest. Ultimate properties are the properties of ideal, defect free, structures. So far, for polymer crystals the ultimate elastic modulus and the ultimate tensile strength have not been calculated at an appropriate level. In particular, convergence as a function of basis set size has not been demonstrated, and most calculations have been applied to a single isolated chain rather than a three-dimensional polymer crystal. Using the Car-Parrinello method, we have been able to achieve basis set convergence for the elastic modulus of a three-dimensional infinite polyethylene crystal. These results will also be fliscussed. [Pg.433]

The seminal discovery that transformed membrane separation from a laboratory to an industrial process was the development, in the early 1960s, of the Loeb-Sourirajan process for making defect-free, high flux, asymmetric reverse osmosis membranes (5). These membranes consist of an ultrathin, selective surface film on a microporous support, which provides the mechanical strength. The flux of the first Loeb-Sourirajan reverse osmosis membrane was 10 times higher than that of any membrane then avaUable and made reverse osmosis practical. The work of Loeb and Sourirajan, and the timely infusion of large sums of research doUars from the U.S. Department of Interior, Office of Saline Water (OSW), resulted in the commercialization of reverse osmosis (qv) and was a primary factor in the development of ultrafiltration (qv) and microfiltration. The development of electro dialysis was also aided by OSW funding. [Pg.60]

Dense Symmetrical Membranes. These membranes are used on a large scale ia packagiag appHcations (see Eilms and sheeting Packaging materials). They are also used widely ia the laboratory to characterize membrane separation properties. However, it is difficult to make mechanically strong and defect-free symmetrical membranes thinner than 20 p.m, so the flux is low, and these membranes are rarely used in separation processes. Eor laboratory work, the membranes are prepared by solution casting or by melt pressing. [Pg.61]

Interfacial polymerization membranes are less appHcable to gas separation because of the water swollen hydrogel that fills the pores of the support membrane. In reverse osmosis, this layer is highly water swollen and offers Httle resistance to water flow, but when the membrane is dried and used in gas separations the gel becomes a rigid glass with very low gas permeabiUty. This glassy polymer fills the membrane pores and, as a result, defect-free interfacial composite membranes usually have low gas fluxes, although their selectivities can be good. [Pg.68]

Most solution-cast composite membranes are prepared by a technique pioneered at UOP (35). In this technique, a polymer solution is cast directly onto the microporous support film. The support film must be clean, defect-free, and very finely microporous, to prevent penetration of the coating solution into the pores. If these conditions are met, the support can be coated with a Hquid layer 50—100 p.m thick, which after evaporation leaves a thin permselective film, 0.5—2 pm thick. This technique was used to form the Monsanto Prism gas separation membranes (6) and at Membrane Technology and Research to form pervaporation and organic vapor—air separation membranes (36,37) (Fig. 16). [Pg.68]

Table 1 Hsts the properties of several semiconductors relevant to device design and epitaxy. The properties are appropriate to the 2incblende crystal stmcture in those cases where hexagonal polytypes exist, ie, ZnS and ZnSe. This first group of crystal parameters appHes to the growth of epitaxial heterostmctures the cubic lattice constant, a the elastic constants, congment sublimation temperature, T. Eor growth of defect-free... Table 1 Hsts the properties of several semiconductors relevant to device design and epitaxy. The properties are appropriate to the 2incblende crystal stmcture in those cases where hexagonal polytypes exist, ie, ZnS and ZnSe. This first group of crystal parameters appHes to the growth of epitaxial heterostmctures the cubic lattice constant, a the elastic constants, congment sublimation temperature, T. Eor growth of defect-free...
In reverse-roU coating, as in forward-roU coating, instabilities can form. However, it is possible to obtain defect-free coatings at high speed and sometimes increasing the speed can lead to a smooth coating when a ribbing condition is present. [Pg.309]

In addition, all of the process raw materials must be clean and not iatroduce contaminants. The raw materials and temporary coatings must also be defect-free, and these have to be manufactured under similar conditions so that no contaminants are iatroduced. The solvents used to clean the substrate and develop the resists must be filtered and pure. Care must also be taken to ensure that no trace compounds or elements are present that may affect the electronic properties. The specific type of coating aid, the type of functional coating, and the process used to apply the functional coating are all widely varied ia actual practice. [Pg.124]

Lastly, the photoreceptors must be inexpensive and easy to fabricate into defect-free, large-area thin films with uniform thickness of all layers. [Pg.130]

Nucleation in solids is very similar to nucleation in liquids. Because solids usually contain high-energy defects (like dislocations, grain boundaries and surfaces) new phases usually nucleate heterogeneously homogeneous nucleation, which occurs in defect-free regions, is rare. Figure 7.5 summarises the various ways in which nucleation can take place in a typical polycrystalline solid and Problems 7.2 and 7.3 illustrate how nucleation theory can be applied to a solid-state situation. [Pg.73]

Fig. 7.5. Nucleation in solids. Heterogeneous nucleotion con take place at defects like dislocations, grain boundaries, interphase interfaces and free surfaces. Homogeneous nucleation, in defect-free regions, is rare. Fig. 7.5. Nucleation in solids. Heterogeneous nucleotion con take place at defects like dislocations, grain boundaries, interphase interfaces and free surfaces. Homogeneous nucleation, in defect-free regions, is rare.
Fig. 9-20 Pipe/soil potential of a pipeline with defect-free PE coating (up to 200 m) and with bitumen coating (200 to 600 m) in the region of an anodic voltage cone... Fig. 9-20 Pipe/soil potential of a pipeline with defect-free PE coating (up to 200 m) and with bitumen coating (200 to 600 m) in the region of an anodic voltage cone...
Tank/soil potential measurements cannot be made on objects to be protected with very high coating resistances which are found in rare cases of defect-free coating, and particularly with resin coatings. Off potentials change relatively quickly with time, similar to the discharge of a capacitor, and show erroneous values that are too positive [8]. This is the case with coating resistances of 10 Q m. If there are defects, the resistance is clearly much lower. The advice in Section 3.3.2.2 is then applicable for potential measurement. [Pg.295]


See other pages where Defect-free is mentioned: [Pg.16]    [Pg.639]    [Pg.720]    [Pg.2880]    [Pg.437]    [Pg.207]    [Pg.245]    [Pg.154]    [Pg.61]    [Pg.66]    [Pg.68]    [Pg.325]    [Pg.430]    [Pg.434]    [Pg.346]    [Pg.308]    [Pg.309]    [Pg.313]    [Pg.313]    [Pg.219]    [Pg.42]    [Pg.123]    [Pg.133]    [Pg.157]    [Pg.422]    [Pg.117]    [Pg.260]    [Pg.375]    [Pg.57]    [Pg.65]    [Pg.66]    [Pg.141]   
See also in sourсe #XX -- [ Pg.180 , Pg.218 ]




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