Schottky, defects

Point defects (Schottky, Frenkel, unoccupied lattice sites, misplaced units)... 

BALANCED POPULATIONS OF POINT DEFECTS SCHOTTKY AND FRENKEL DEFECTS... 

A point defect is a localized defect that consists of a mistake at a single atom site in a solid. The simplest point defects that can occur in pure crystals are missing atoms, called vacancies, or atoms displaced from the correct site into positions not normally occupied in the crystal, called self-interstitials. Additionally atoms of an impurity can occupy a normal atom site to form substitutional defects or can occupy a normally vacant position in the crystal structure to form an interstitial. Other point defects can be characterized in pure compounds that contain more than one atom. The best known of these are Frenkel defects, Schottky defects, and antisite defects. 

Defects in which both a cation and sufficient anions to balance the charge (or vice versa) are completely missing from the lattice are called Schottky defects. Schottky defects result in a density that is lower than that calculated on the basis of unit cell dimensions, whereas Frenkel defects do not affect this density. Titanium(II) oxide, for example, also has the NaCl structure, but, even when its composition is TiOi.oo (which it rarely is see Section 5.4), about one-sixth of the Ti2+ and 02 sites are vacant. 

Subsequent findings that even conventional ionic solids, such as sodium chloride, have measurable conductivities that are not electronic stimulated the development of theories for ionic motion in solids. Early in this century, Ioffe introduced the concept of interstitial ions and vacancies (see Defects in Solids), which was the starting point of the theory of defects. Frenkel and Schottky used these theories to develop their classic mechanisms to explain how electricity can be conducted through ionic solids by the flow of ions (see Frenkel Defects, Schottky Defects) They proposed that ionic solids are not perfect, with every lattice site occupied by its appropriate ions, but contain defects in which either ions... 

Predominant intrinsic ionic defects (Schottky or Frenkel)... 

Figure 3.19 A defective Schottky contact, typical of real barriers. The small lines indicate defect states in the semiconductor.

Schottky defect See defect structures. Schradan, octamethylpyrophosphoramide,... 

Dislocation theory as a portion of the subject of solid-state physics is somewhat beyond the scope of this book, but it is desirable to examine the subject briefly in terms of its implications in surface chemistry. Perhaps the most elementary type of defect is that of an extra or interstitial atom—Frenkel defect [110]—or a missing atom or vacancy—Schottky defect [111]. Such point defects play an important role in the treatment of diffusion and electrical conductivities in solids and the solubility of a salt in the host lattice of another or different valence type [112]. Point defects have a thermodynamic basis for their existence in terms of the energy and entropy of their formation, the situation is similar to the formation of isolated holes and erratic atoms on a surface. Dislocations, on the other hand, may be viewed as an organized concentration of point defects they are lattice defects and play an important role in the mechanism of the plastic deformation of solids. Lattice defects or dislocations are not thermodynamic in the sense of the point defects their formation is intimately connected with the mechanism of nucleation and crystal growth (see Section IX-4), and they constitute an important source of surface imperfection. 

As outlined above, electron transfer through the passive film can also be cmcial for passivation and thus for the corrosion behaviour of a metal. Therefore, interest has grown in studies of the electronic properties of passive films. Many passive films are of a semiconductive nature [92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102 and 1031 and therefore can be investigated with teclmiques borrowed from semiconductor electrochemistry—most typically photoelectrochemistry and capacitance measurements of the Mott-Schottky type [104]. Generally it is found that many passive films cannot be described as ideal but rather as amorjDhous or highly defective semiconductors which often exlribit doping levels close to degeneracy [105]. 

Materials that contain defects and impurities can exhibit some of the most scientifically interesting and economically important phenomena known. The nature of disorder in solids is a vast subject and so our discussion will necessarily be limited. The smallest degree of disorder that can be introduced into a perfect crystal is a point defect. Three common types of point defect are vacancies, interstitials and substitutionals. Vacancies form when an atom is missing from its expected lattice site. A common example is the Schottky defect, which is typically formed when one cation and one anion are removed from fhe bulk and placed on the surface. Schottky defects are common in the alkali halides. Interstitials are due to the presence of an atom in a location that is usually unoccupied. A... 

Two point defects may aggregate to give a defect pair (such as when the two vacanc that constitute a Schottky defect come from neighbouring sites). Ousters of defects ( also form. These defect clusters may ultimately give rise to a new periodic structure oi an extended defect such as a dislocation. Increasing disorder may alternatively give j to a random, amorphous solid. As the properties of a material may be dramatically alte by the presence of defects it is obviously of great interest to be able to imderstand th relationships and ultimately predict them. However, we will restrict our discussion small concentrations of defects. 

The second class of atomic manipulations, the perpendicular processes, involves transfer of an adsorbate atom or molecule from the STM tip to the surface or vice versa. The tip is moved toward the surface until the adsorption potential wells on the tip and the surface coalesce, with the result that the adsorbate, which was previously bound either to the tip or the surface, may now be considered to be bound to both. For successful transfer, one of the adsorbate bonds (either with the tip or with the surface, depending on the desired direction of transfer) must be broken. The fate of the adsorbate depends on the nature of its interaction with the tip and the surface, and the materials of the tip and surface. Directional adatom transfer is possible with the apphcation of suitable junction biases. Also, thermally-activated field evaporation of positive or negative ions over the Schottky barrier formed by lowering the potential energy outside a conductor (either the surface or the tip) by the apphcation of an electric field is possible. FIectromigration, the migration of minority elements (ie, impurities, defects) through the bulk soHd under the influence of current flow, is another process by which an atom may be moved between the surface and the tip of an STM. 

In pure and stoichiometric compounds, intrinsic defects are formed for energetic reasons. Intrinsic ionic conduction, or creation of thermal vacancies by Frenkel, ie, vacancy plus interstitial lattice defects, or by Schottky, cation and anion vacancies, mechanisms can be expressed in terms of an equilibrium constant and, therefore, as a free energy for the formation of defects, If the ion is to jump into a normally occupied lattice site, a term for... 

The vacant sites will be distributed among the N lattice sites, and the interstitial defects on the N interstitial sites in the lattice, leaving a conesponding number of vacancies on die N lattice sites. In the case of ionic species, it is necessaty to differentiate between cationic sites and anionic sites, because in any particular substance tire defects will occur mainly on one of the sublattices that are formed by each of these species. In the case of vacant-site point defects in a metal, Schottky defects, if the number of these is n, tire random distribution of the n vacancies on the N lattice sites cair be achieved in... 

By analogy with similar materials in which free elecU ons and electron holes are formed, NiO is called a p-type compound having vacant site Schottky defects, and ZnO is an n-type compound having interstitial Frenkel defects. The concentrations of these defects and their relation to the oxygen pressure in the suiTounding atmosphere can be calculated, for a dilute solution of defects by the application of a mass action equation. The two reactions shown above are represented by the equations... 

It is not necessary for a compound to depart from stoichiometry in order to contain point defects such as vacant sites on the cation sub-lattice. All compounds contain such iirndirsic defects even at the precisely stoichiometric ratio. The Schottky defects, in which an equal number of vacant sites are present on both cation and anion sub-lattices, may occur at a given tempe-ramre in such a large concentration drat die effects of small departures from stoichiometry are masked. Thus, in MnOi+ it is thought that the intrinsic concentration of defects (Mn + ions) is so large that when there are only small departures from stoichiometry, the additional concentration of Mn + ions which arises from these deparmres is negligibly small. The non-stoichiometry then varies as in this region. When the departure from non-stoichio-... 

At a given ideal composition, two or more types of defects are always present in every compound. The dominant combinations of defects depend on the type of material. The most prominent examples are named after Frenkel and Schottky. Ions or atoms leave their regular lattice sites and are displaced to an interstitial site or move to the surface simultaneously with other ions or atoms, respectively, in order to balance the charge and local composition. Silver halides show dominant Frenkel disorder, whereas alkali halides show mostly Schottky defects. 

The formation of the combination of defects may be described as a chemical reaction and thermodynamic equilibrium conditions may be applied. The chemical notations of Kroger-Vink, Schottky, and defect structure elements (DSEs) are used [3, 11]. The chemical reactions have to balance the chemical species, lattice sites, and charges. An unoccupied lattice site is considered to be a chemical species (V) it is quite common that specific crystal structures are only found in the presence of a certain number of vacancies [12]. The Kroger-Vink notation makes use of the chemical element followed by the lattice site of this element as subscript and the charge relative to the ideal undisturbed lattice as superscript. An example is the formation of interstitial metal M ions and metal M ion vacancies, e.g., in silver halides ... 

Schottky defects (absence of both cation and anion)... 

Note that, in general, anions are larger in size than cations due to the extra electrons present in the former. A hexagonal lattice is shown in 3.1.6. with both Frenkel and Schottky defects, as well as substitutional defects. Thus, if a cation is missing (cation vacancy) in the cation sublattice, a like anion will be missing in the anion sub-lattice. This is known as a Schottky defect (after the first investigator to note its existence). 

Thus, if Frenkel Defects predominate in a given solid, other defects are usually not present. Likewise, for the Schottky Defect. Note that this applies for associated defects. If these are not present, there will still be 2 types of defects present, each having an opposite effect upon stoichiometry. 

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