V compounds

Wilmsen C W (ed) 1985 Physios and Chemistry of iti-V Compound Semioonduotor interfaoes (New York Plenum)... 

III-V compound semiconductors with precisely controlled compositions and gaps can be prepared from several material systems. Representative III-V compounds are shown in tire gap-lattice constant plots of figure C2.16.3. The points representing binary semiconductors such as GaAs or InP are joined by lines indicating ternary and quaternary alloys. The special nature of tire binary compounds arises from tlieir availability as tire substrate material needed for epitaxial growtli of device stmctures. 

Figure C2.16.3. A plot of tire energy gap and lattice constant for tire most common III-V compound semiconductors. All tire materials shown have cubic (zincblende) stmcture. Elemental semiconductors. Si and Ge, are included for comparison. The lines connecting binary semiconductors indicate possible ternary compounds witli direct gaps. Dashed lines near GaP represent indirect gap regions. The line from InP to a point marked represents tire quaternary compound InGaAsP, lattice matched to InP.

Figure C2.16.2 shows tire gap-lattice constant plots for tire III-V nitrides. These compounds can have eitlier tire WTirtzite or zincblende stmctures, witli tire wurtzite polytype having tire most interesting device applications. The large gaps of tliese materials make tliem particularly useful in tire preparation of LEDs and diode lasers emitting in tire blue part of tire visible spectmm. Unlike tire smaller-gap III-V compounds illustrated in figure C2.16.3 single crystals of tire nitride binaries of AIN, GaN and InN can be prepared only in very small sizes, too small for epitaxial growtli of device stmctures. Substrate materials such as sapphire and SiC are used instead.

Some of tliese problems are avoided in heterojunction bipolar transistors (HBTs) [jU, 38], tlie majority of which are based on III-V compounds such as GaAs/AlGaAs. In an HBT, tlie gap of tlie emitter is larger tlian tliat of tlie base. The conduction and valence band offsets tliat result from tlie matching up of tlie two different materials at tlie heterojunction prevent or reduce tlie injection of tlie base majority carriers into tlie emitter. This peniiits tlie use of... 

For the most part it is true to say that the chemistry of the alkali and alkaline earth metal compounds is not that of the metal ion but rather that of the anion with which the ion is associated. Where appropriate, therefore, the chemistry of these compounds will be discussed in other sections, for example nitrates with Group V compounds, sulphates with Group VI compounds, and only a few compounds will be discussed here. 

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

The alkah manganates(V) in strongly alkaline solution (45—50% at 0°C) are all blue. In water these manganate(V) compounds instantly disproportionate into manganate(VI) and Mn02. Lithium manganate(V), prepared by reaction of LiMnO and excess LiOH at 124°C, is an exception. This compound is relatively stable in 3% LiOH solution at 0°C and in absolute methyl alcohol. 

The most important manganese(V) compound is K MnO, a key intermediate in the manufacture of potassium permanganate. Potassium manganate(V) is an easily crystallized salt obtained by reduction of potassium permanganate using sodium sulfite in strong sodium hydroxide solution. This was the first compound to be recognized as exclusively pentavalent. 

Molybdenum(V) compounds generally occur as mononuclear or dinuclear species. Molybdenum pentachloride [10241-05-1] MoCl, formed by combination of the elements, serves as a usebil and reactive starting material (Fig. 1). MoCl has a dinuclear stmcture (Fig. 3) in the soHd state but is mononuclear in the gas phase. In solution or in the soHd state the compound, actually Mo2C1 q (Fig- 3a), is readily hydroly2ed in air to form MoOCl ... 

Arsenic from the decomposition of high purity arsine gas may be used to produce epitaxial layers of III—V compounds, such as Tn As, GaAs, AlAs, etc, and as an n-ty e dopant in the production of germanium and silicon semiconductor devices. A group of low melting glasses based on the use of high purity arsenic (24—27) were developed for semiconductor and infrared appHcations. 

Diarylbismuthinic Acids and Their Esters. Although organobismuth(V) compounds containing three, four, or five Bi—C bonds are well-known, no compounds containing two such bonds had been prepared until a number of methyl diarylbismuthinates (diarylmethoxybismuth oxides) were reported ia 1988 (145). 

Quaternary bismuth compounds have not found extensive use ia industry or ia organic synthesis. In manifold studies of organobismuth(V) compounds as oxidi2ing and arylating agents, such quaternary bismuth compounds as (CgH )4Bi02CCH2, (CgH )4Bi02SCgH4CH2-4, and... 

X = F, Cl, and Br, contains the oxochromium(V) cation [23411-25-8], CrO ", exhibits a square pyramidal geometry. Compounds containing this cation are among the most stable Cr(V) compounds. 

V. Compounds with Potential Substituted Amino Groups. , . 417... 

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