Donors in III-V and II-VI Compounds

The energy levels are obtained for a 3p i binding energy of 3.12 meV. The uncertainty on the levels deduced from the absorption lines is 0.17 meV. The last row gives the IBE binding energy. All the values are in meV (after [18]), a [118]) 

With the exception of GaAs, GaP, InP and InSb, the absorption studies on donors in compound semiconductors are much less documented than those in group-IV materials. This does not reflect a lack of interest for these materials, as they have been the subjects of many PL experiments, but rather 

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In the following, an attempt to provide the most useful absorption data on centres with donor effective-mass-like properties in semiconductors is made. The group-IV crystals are considered first, and then the III-V and II-VI compounds. 

The II-VI compounds have a larger ionicity than the III-V compounds, and it was first assumed that most of the residual donors and acceptors were due to the lattice defects like the anion and cation vacancies (Vn and VVi) and to group-II and group)-VI interstitial atoms, but it was later found that in most cases, group-1 and group)-V impurities were involved [118]. In some of these compounds, Li occupies a group-II site, where it is an acceptor, but it can also be present in the interstitial form, leading to self-compensation. 

I. 1-anthryl-l -naphthyl alkanes. II. Nicotinamide-adenine-dinucleotide (reduced) NADH. IFF Oligomers of poly-L-proline with a-naphthyl group as energy donor and dansyl group as energy acceptor. III. p-methoxy benzene and flourene chromophere in norbornadiene-spirocyio-propane frame. V and VI. Anthrone and naphthalene chromphore in spiro-compounds. 

In predominantly covalent compounds the behavior of impurities is similar to that in covalent elemental crystals. For example, in gallium arsenide, group I or II elements on Ga sites or group III or IV elements on As sites will act as acceptors, while group IV or V elements on Ga sites and group VI or VII elements on As sites will act as donors. Thus, a group IV element such as Si may act as either a donor or acceptor depending upon which sublattice it enters ... 

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