Transistor drain electrode

As an example of the latter technique, Volkman et al. demonstrated the feasibility of using spin-cast zinc oxide nanoparticles encapsulated in 1-dodecanethiol to fabricate a functional transistor.44 The zinc oxide was deposited on a thermally grown silicon dioxide layer on a conventional silicon wafer, with thermally evaporated gold source and drain electrodes. As reported, the process requires very small particles (3nm or less) and a 400 °C forming gas anneal. A similar approach was also reported by Petrat, demonstrating n-channel thin-film transistor operation using a nanoparticle solution of zinc oxide dispersed onto a thermally grown silicon dioxide layer on a conventional... 

Cgo single molecules between electrodes fabricated by electromigration [103] to create single Cgo molecule transistors were measured at a temperature of 40 mK. The results showed the coexistence and competition of the effects of Coulomb repulsion, Kondo correlations and superconductivity [104]. The Kondo effect had been previously observed in similar devices [105]. Recently a SAM of a tricarboxylic acid fullerene derivative was used to fabricate a transistor. The SAM was created by allowing the fullerene compound to self assemble on top of an AI2O3 layer just above the aluminum drain electrode the source lead was created by... 

Electrodes are attached to the p-type block and to the n-type channel. The electrodes attached to the /3-type channel are known as the source (negative electrode which provides electrons) and the drain (positive electrode). The electrode attached to the //-type block is known as the gate electrode. A low voltage (typically 6 V) is applied across the source and drain electrodes. To fulfill the transistor s role, as amplifier or switch, a voltage is applied to the gate electrode. Electrons flow into the //-type semiconductor but... 

The operation of the NMOS transistor shown schematically in Figure 12 can be considered in the light of the previous discussion of a MOS capacitor. When no voltage is applied to the gate, the source and drain electrodes correspond to p-n junctions connected through the p region therefore only a small reverse current can flow from source to drain. On the... 

An OTFT comprises three electrodes (source, drain, and gate), a gate dielectric layer, and an organic or polymer semiconductor layer. In operation, an electric field is applied across the source-drain electrodes, and the transistor is turned on when a voltage (VG) is applied to the gate electrode, which induces a current flow (fD) from the source electrode to drain electrode. When VG = 0, the transistor is turned off, fD should in theory be 0, that is, no current is flowing. 

A plurality of thin film field effect transistors 11 are deposited onto a substrate 12. Each of the transistors has a source electrode 13, a drain electrode 14 and a gate electrode 15. Source lines 17 link the source electrodes in each row of the transistors and drain lines 18 link the drain electrodes in each column of the transistors. The source lines and drain lines are electrically isolated by a planarization layer 19. A mercury cadmium telluride layer 20 is deposited onto the planarization layer followed by a top electrode layer 23. The gate electrodes are connected with the mercury cadmium telluride layer by connectors 21. A cross-section of the imager is shown below. 

Thin-film transistors (TFTs) are among the key building blocks of these circuits [2]. Figure 10.1 shows a cross-sectional view of a TFT. A thin insulating film (i.e. the gate dielectric) isolates source and drain electrodes and a semiconductor layer... 

Fig. 10.1. Schematic illustrations of two device geometries for organic thin-film transistors. Part (a) shows the layout of a top contact device in which the source and drain electrodes are deposited on top of the...

Figure 10.4 shows the saturation current at maximum gate voltage for two adjacent sets of transistors, both with 15 jam lines, as a function of 1/L. The results are internally consistent - e.g. maximum on currents scaling roughly linearly with 1/L for a given array of transistors. The one data point outside linear behavior was from a device that had a visible break in one of the source/drain electrodes. The linear dependence extrapolated to zero shows a relatively low contact resistance at the DNNSA-PANI/SWNT pentacene interface [15]. 

Micro-contact printing can be used in plastic electronics to form high-resolution source/drain electrodes with short channel lengths [14]. Depositing an organic semiconductor on top of these electrodes yields a transistor with a layout like that... 

Like pCP, nTP can pattern electrodes for plastic electronic components. Figure 10.23 shows an optical micrograph (inset) and current-voltage characteristics (left frame) of a transistor that incorporates interdigitated source/drain electrodes of Au/Ti patterned by nTP on PDMS/PETusing procedures described previously [10]. 

Laminating this structure against a substrate that supports an organic semiconductor, gate dielectric (GR) and gate electrode (ITO) forms a transistor with the source/drain electrodes on top of the semiconductor. The transistor shown here... 

This chapter summarizes some of our recent work in printing techniques and plastic electronics. It also presents new data from printed transistors that use several different organic semiconductors in a variety of device geometries. In all cases, we observed good performance. pCP for the source/drain electrodes is attractive because it provides a simple and potentially low-cost route to high resolution (i.e. small channel lengths, L) structures that can be used to build transistors which... 

Zaumseil J, Someya T, Baldwin K, Bao Z, Loo Y-L and Rogers J A, Nanoscale Organic Transistors Formed by Soft Contact Lamination and Source/Drain Electrodes Supported by High Resolution Rubber Stamps , Appl Phys Lett, 2003 82 793— 795. 

Using impedance spectroscopy we measured transistors with solution processed pentacene as the semiconductor. Fabrication details are discussed in Section 13.3.1. We have made use of a ring-type transistor, in which the source electrode forms a closed ring around the transistor channel and the drain electrode, at which the current is monitored. Using this geometry, the measurements are insensitive to parasitic currents that may flow outside the transistor area [29]. 

M = Tb, Lu) into organic thin-film transistors by LB technique and reported their field effect mobility, which represented the first report for p-type OFETs based on bis(phthalocyaninato) rare earth complexes prepared via LB method [88], Due to the highly ordered molecular arrangement of M(Pc)[Pc(OC8Hi7)g] (M = Tb, Lu) in LB films and the appropriate HOMO energy level of these double-deckers relative to the Au source-drain electrodes, the OFETs reported in that work exhibited higher hole transfer mobility of 1.7 x 10-3 cm2 V-1 s-1 in comparison with those fabricated from monomeric phthalocyanine LB films. 

---