Thin film multilayer structure

Figure 17. Subtractive approach for processing thin-film multilayer structures.

Fig. 4.33. Experimentally measured rate of growth of the delamination along the TiN-Si02 interface in 45% relative humidity laboratory air environment as a function of the energy release rate Q for the symmetric multilayer structure shown in Figure 4.32 with the thickness of the Al—Gu layer of 0.65 um. The thin film multilayer structure, sandwiched between two identical Si layers, was tested for interface delamination growth using a symmetric four-point flexure test method, similar to that shown in Figure 4.31. Adapted from Dauskardt et al. (1998).

Copper/Polyimide Thin Film Multilayer Interconnect Structure... 

Fig. 10.25. Multilayer thin film capacitor structure printed in a single step on to a plastic substrate using the nanotransfer printing technique. A multilayer of Au/SiNx/Ti/ Au was first deposited on to a silicon stamp formed by photolithography and etching. Contacting this stamp to a substrate of Au/ PDMS/PET forms a cold weld that bonds the exposed Au on the stamp to the Au-coating on the substrate. Removing the stamp produces arrays of square (250 pm x 250 pm) metal/...

The investigated samples are thin film multilayer nanostructures [3-6]. Each structure unit is a nanolayer wdth a locally distributed nanociystal array inside it. The geometry of the nanostructures can be tuned by controlling the thicknesses and the arranging of the sensitizing and complementary, buffer or matrice, components. Every nanolayer can be designed as one material, as composition of nanocrystals, of clusters of two materials [3-5]. 

Typical Thin Film Multilayer Package Structure... 

II-VI semiconductor layers and bulk semiconductors like Si, GaAs, InP, etc. In particular, quantum wells are formed by thin epitaxial multilayered structures like (Zn, Cd)Se/ZnS. Nevertheless, the choice between bulk semiconductors and the layers deposited or between the multilayers is governed by the lattice mismatch between the two components as the lattice mismatch causes the formation of misfit dislocations. In the optical devices these defects are potential non-radiative centres and at worst they can cause the failure of injection lasers. Figure 29 is a map of energy gap versus lattice constants for a variety of semiconductors it can be used to select different heterostructures, not only for optoelectronics applications but also for photovoltaic cells. In the latter application the deposited films are generally polycrystalline and the growth of high-quality epitaxial layers has received little applications. 

An important theme of this volume is the interrelationships among materials chemistry, photonic and optoelectronic properties, and device performance. The design and synthesis of novel polymer compositions and architectures aimed at enhanced properties are emphasized in some chapters. Other contributions feature the development of novel approaches to processing and fabrication of photonic and optoelectronic polymers into thin films, multilayers, fibers, waveguides, gratings, and device structures. These approaches, which emphasize polymer synthesis, processing, and device fabrication, are complementary and synergistic. 

In all but the simplest electronic circuits, it is necessary to have a method for fabricating multilayer interconnection structures to enable all the necessary points to be connected. The thick film technology is limited to three layers for all practical purposes because of yield and planarity considerations, and thin-film multilayer circuits are quite expensive to fabricate. The copper technologies can produce only a single layer because of processing limitations. 

We attempt to extend the Hard-Soft Acid-Base (HSAB) principle for the reactions in solutions to interactions in solids. First we point out the important link between the absolute hardness of acid-and-base and the average energy gap. Then we discuss the electronic band structures of various solids, e.g., metals, semimetals, semiconductors and insulators. On the basis of energy gaps, we elaborate various consequences of the acid-base interactions in solids. The applications of HSAB principle and the frontier orbital concept to the solid adhesion and surface interactions between metals and polymers will be verified by experimental results reported in the literature. The new findings reported in this paper should be beneficial to those who are carrying out research in or processing thin-film microelectronic devices or thick-film multilayer structures. 

Thin films, Multilayered. 2. Layer structure (Solids) 3. Chemistry, Inorganic—Synthesis. 4. Organic compounds—Synthetic. 

X-ray Diffraction (XRD) is a powerful technique used to uniquely identify the crystalline phases present in materials and to measure the structural properties (strain state, grain size, epitaxy, phase composition, preferred orientation, and defect structure) of these phases. XRD is also used to determine the thickness of thin films and multilayers, and atomic arrangements in amorphous materials (including polymers) and at inter ces. 

XRD is an excellenr, nondestructive method for identifying phases and characterizing the structural properties of thin films and multilayers. It is inexpensive and easy to implement. The future will see more use of GIXD and depth dependent measurements, since these provide important information and can be carried out on lab-based equipment (rather than requiring synchrotron radiation). Position sensitive detectors will continue to replace counters and photographic film. 

A. Segmuller, I, C. Noyan, V. S. Speriosu. X-Ray Diffraction Studies of Thin Films and Multilayer Structures. Prog. Cryst. Growth and Charact. 18,21, 1989. 

Three common uses of RBS analysis exist quantitative depth profiling, areal concentration measurements (atoms/cm ), and crystal quality and impurity lattice site analysis. Its primary application is quantitative depth profiling of semiconductor thin films and multilayered structures. It is also used to measure contaminants and to study crystal structures, also primarily in semiconductor materials. Other applications include depth profilii of polymers, high-T superconductors, optical coatings, and catalyst particles. ... 

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