Thin annealing

C ahn and Hanneman 11341 and Finn and Gatos 11351 observed that thin annealed wafers of several 111-V compounds, like GaAs, bend spontaneously. This effect can be attributed to a difference in surface stress of the two faces. The III-V compounds have, due to their crystal structure, different opposite faces. If. for instance, the surface stress of the top side is smaller than that of the bottom side, the wafer bends downwards. The degree of bending is related to the difference in surface stress AT by Stoney s formula 136 ... 

The thickness of the annealed Mo substrate layers was found to be dependent of the annealing conditions such as the temperature and time. The samples used for devices were prepared at 500 C, for 2 hours. The structure of the films was checked by performing X-ray incident beam experiment. For thin annealed layers, three XRD peaks of the Mo substrate are obtained with a strong intensity (denoted by Mo-peaks in figure 15) indicating bulk Mo crystalline structure of the substrate. 

Structural Model. Based on the above presented surface mechanical data obtained from unannealed ultrathin PEP films, and previous studies of thin annealed... 

Rhenium may be electroplated from solutions of ReO in sulfuric acid. To obtain a durable rhenium plate it is desirable to deposit the metal in thin layers, annealing at high temperature after each layer is appHed. 

Properties. The properties of plain carbon steels are governed principally by carbon content and microstmcture. These properties can be controlled by heat treatment as discussed. About half the plain carbon steels are used in the hot-roUed form, although increasingly the property combinations are enhanced by controlled cooling following the last stand of the hot mill for stmctural shapes, sheet, and strip. The other half are cold-roUed to thin sheet or strip and used direcdy or with an annealing treatment such as described. 

Flexible foams are three-dimensional agglomerations of gas bubbles separated from each other by thin sections of polyurethanes and polyureas. The microstmetures observed in TDI- and MDI-based flexible foams are different. In TDI foams monodentate urea segments form after 40% conversion, foUowed by a bidentate urea phase, which is insoluble in the soft segment. As the foam cures, annealing of the precipitated discontinuous urea phase... 

Sheet and Strip. The manufacture of wrought copper materials starts with either semicontinuously cast slabs that are hot roUed, or cast plate that is thin enough, near 13 mm (0.5 in.), to be cold roUed directly. The surfaces of both hot roUed slabs and as-cast plate are milled to remove defects before proceeding to cold rolling and annealing operations. 

Another problem in the construction of tlrese devices, is that materials which do not play a direct part in the operation of the microchip must be introduced to ensure electrical contact between the elecuonic components, and to reduce the possibility of chemical interactions between the device components. The introduction of such materials usually requires an annealing phase in the construction of die device at a temperature as high as 600 K. As a result it is also most probable, especially in the case of the aluminium-silicon interface, that thin films of oxide exist between the various deposited films. Such a layer will act as a banier to inter-diffusion between the layers, and the transport of atoms from one layer to the next will be less than would be indicated by the chemical potential driving force. At pinholes in the AI2O3 layer, aluminium metal can reduce SiOa at isolated spots, and form the pits into the silicon which were observed in early devices. The introduction of a tlrin layer of platinum silicide between the silicon and aluminium layers reduces the pit formation. However, aluminium has a strong affinity for platinum, and so a layer of clrromium is placed between the silicide and aluminium to reduce the invasive interaction of aluminium. 

The result is work-hardening the steeply rising stress-strain curve after yield, shown in Chapter 8. All metals and ceramics work-harden. It can be a nuisance if you want to roll thin sheet, work-hardening quickly raises the yield strength so much that you have to stop and anneal the metal (heat it up to remove the accumulated dislocations) before you can go on. But it is also useful it is a potent strengthening method, which can be added to the other methods to produce strong materials. 

A consequence of ion migration is electrolytic blister formation. In the case of anodic blisters the coated surface shows pitting, whereas in the case of cathodic blisters there is no change in the metal surface or there is merely the formation of thin oxide layers with annealing color. 

Interdiffusion of bilayered thin films also can be measured with XRD. The diffraction pattern initially consists of two peaks from the pure layers and after annealing, the diffracted intensity between these peaks grows because of interdiffusion of the layers. An analysis of this intensity yields the concentration profile, which enables a calculation of diffusion coefficients, and diffusion coefficients cm /s are readily measured. With the use of multilayered specimens, extremely small diffusion coefficients (-10 cm /s) can be measured with XRD. Alternative methods of measuring concentration profiles and diffusion coefficients include depth profiling (which suffers from artifacts), RBS (which can not resolve adjacent elements in the periodic table), and radiotracer methods (which are difficult). For XRD (except for multilayered specimens), there must be a unique relationship between composition and the d-spacings in the initial films and any solid solutions or compounds that form this permits calculation of the compo-... 

Figure 6 Backscattering spectra for a thin fiim of Ni deposited on an amorphous SiOj fiim grown on top of Si (111) for three different annealing temperatures.

Figure 7 Quantitative high depth resolution profile of the major elements in the thin-film structure of Al /TIN /Si, comparing the annealed and unannealad structures to determine the extent of interdiffusion of the layers. The depth profile of the unannealed sample shows excellent depth resolution (a). The small amount of Si in the Al is segregated toward the Al/TiN interface. After annealing, significant Ti has diffused into the Al layer and Al into the TIN layer, but essentially no Al has diffused into the Si (b). The Si has become very strongly localized at the Al / TIN interface.

The properties of the nylons are considerably affected by the amount of crystallisation. Whereas in some polymers, e.g. the polyacetals and PCTFE, processing conditions have only a minor influence on crystallinity, in the case of the nylons the crystallinity of a given polymer may vary by as much as 40%. Thus a moulding of nylon 6, slowly cooled and subsequently annealed, may be 50-60% crystalline, while rapidly cooled thin-wall mouldings may be only 10% crystalline. 

Another kinetic jjhenomenon where Calm s critical waves can possibly be visualized and studied is the replication of interphase boundaries (IPB) illustrated in Figs. 8-10. Similarly to the replication of APBs. it can arise after a two-step quench of an initially uniform disordered alloy. First the alloy is quenched and annealed at temperature T in some two-phase state that can be either metastable or spinodally unstable with respect to phase separation. Varying the annealing time one can grow here precipitates ("droplets ) of a suitable size /. For sufficiently large /, the concentration c(r) within A-riched droplets is close to the equilibrium binodal value C(,(T ) (thin curve in Fig. 9). 

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