Diffusion inter

It follows from this discussion that all of the transport properties can be derived in principle from the simple kinetic dreoty of gases, and their interrelationship tlu ough k and c leads one to expect that they are all characterized by a relatively small temperature coefficient. The simple theory suggests tlrat this should be a dependence on 7 /, but because of intermolecular forces, the experimental results usually indicate a larger temperature dependence even up to for the case of molecular inter-diffusion. The Anhenius equation which would involve an enthalpy of activation does not apply because no activated state is involved in the transport processes. If, however, the temperature dependence of these processes is fitted to such an expression as an algebraic approximation, tlren an activation enthalpy of a few kilojoules is observed. It will thus be found that when tire kinetics of a gas-solid or liquid reaction depends upon the transport properties of the gas phase, the apparent activation entlralpy will be a few kilojoules only (less than 50 kJ). 

The reaction mechanisms are quite complicated in these syntheses, the kinetics depending on inter-diffusion rates in neighbouring particles, the formation of transient liquid phases, and in some cases, the vapour transport of a reactant. The presence of the latter can be detected by dre retarding effect of increased pressure in an inert surrounding atmosphere. 

Inter-diffusion and interaction in thin film microelectronic structures... 

Another problem in the construction of tlrese devices, is that materials which do not play a direct part in the operation of the microchip must be introduced to ensure electrical contact between the elecuonic components, and to reduce the possibility of chemical interactions between the device components. The introduction of such materials usually requires an annealing phase in the construction of die device at a temperature as high as 600 K. As a result it is also most probable, especially in the case of the aluminium-silicon interface, that thin films of oxide exist between the various deposited films. Such a layer will act as a banier to inter-diffusion between the layers, and the transport of atoms from one layer to the next will be less than would be indicated by the chemical potential driving force. At pinholes in the AI2O3 layer, aluminium metal can reduce SiOa at isolated spots, and form the pits into the silicon which were observed in early devices. The introduction of a tlrin layer of platinum silicide between the silicon and aluminium layers reduces the pit formation. However, aluminium has a strong affinity for platinum, and so a layer of clrromium is placed between the silicide and aluminium to reduce the invasive interaction of aluminium. 

An interesting approach to the inter-diffusion problem was made by Rhys S who protected ruthenium-rich ruthenium-gold alloys by palladium-... 

Inter-diffusion Self-diffusion Deviation from theory... 

Chen et al. [123] examined the amount-dependent change in morphology for a series of Au/Pt bimetallic nanoparticles. The EXAFS results confirmed the formation of a core/shell structure and inter-diffusion between Au and Pt atoms. The composition of the shell layer was found to be Pt-enriched AuPt alloy. They also characterized bimetallic Ag-core/Au-shell nanoparticles by the EXAFS [124]. 

Room temperature deposition of silver on Pd(lOO) produces a rather sharp Ag/Pd interface [62]. The interaction with a palladium surface induces a shift of Ag 3d core levels to lower binding energies (up to 0.7 eV) while the Pd 3d level BE, is virtually unchanged. In the same time silver deposition alters the palladium valence band already at small silver coverage. Annealing of the Ag/Pd system at 520 K induces inter-diffusion of Ag and Pd atoms at all silver coverage. In the case when silver multilayer was deposited on the palladium surface, the layered silver transforms into a clustered structure slightly enriched with Pd atoms. A hybridization of the localized Pd 4d level and the silver sp-band produces virtual bound state at 2eV below the Fermi level. 

Hodak JH, Henglein A, Giersig M, Hartland GV (2000) Laser-induced inter-diffusion in AuAg Core — shell nanoparticles. J Phys Chem B 104 11708-11718... 

In planar SOFCs, individual cathode, anode, and electrolyte layers have been deposited by PS [109-111], as well as coatings on interconnect materials and full cells [108, 110, 112]. In addition to the interconnect layers themselves in tubular SOFCs, dense protective layers with good adhesion have also been deposited to protect planar SOFC interconnects from oxidation [110], and diffusion barriers to inhibit inter-diffusion between the interconnects and anodes have been produced by PS [113]. 

A general treatment of a diffusion-controlled growth of a stoichiometric intermetallic in reaction between two two-phase alloys has been introduced by Paul et al. (2006). A reaction couple in which a layer of Co2Si is formed during inter-diffusion from its adjacent saturated phases was used as a model system. In the discussion it has been emphasized that the diffusion couple is undoubtedly one of the most efficient and versatile techniques in solid-state science it is therefore desirable to have alternative theories that enable us to deduce the highest possible amount of information from the data that are relatively easily attainable in this type of experiments. 

K2SO4. This temperature decrease is sufficient to inhibit ignition of the inter-diffused mixture of exhaust gas and ambient air, thereby preventing the generation of a secondary flame. 

Other general cases in binary systems are referred to as interdiffusion or binary diffusion. For example, Fe-Mg diffusion between two olivine crystals of different Xpo (mole fraction of forsterite Mg2Si04) is called Fe-Mg interdiffusion. Inter-diffusivity often varies across the profile because there are major concentration changes, and diffusivity usually depends on composition. 

For inter diffusion between same-valence ions (ionic exchange) in an aqueous solution, or a melt, or a solid solution such as olivine (Fe +, Mg +)2Si04, an equation similar to Equation 3-135c has been derived from the Nemst-Planck equations first by Helfferich and Plesset (1958) and then with refinement by Barter et al. (1963) with the assumption that (i) the matrix (or solvent) concentration does not vary and (ii) cross-coefficient Lab (phenomenological coefficient in Equation 3-96a) is negligible, which is similar to the activity-based effective binary diffusion treatment. The equation takes the following form ... 

Under suitable conditions, certain chemical reactions will give rise to nacreous sulphur the most satisfactory result is obtained by allowing slow inter-diffusion of solutions of sodium thiosulphate and potassium hydrogen sulphate to occur.7 Another method involves the gradual decomposition of sulphur chloride or bromide by the vapour of water or methyl alcohol at the ordinary temperature.8 The decomposition of calcium polysulphidcs by hydrochloric acid,9 and of hydrogen persulphide by the addition of alcohol, ether, ethyl acetate or other organic solvents, also yields sulphur of the desired modification. 

Diffusion in crystals means site-exchange of different SE s. If the SE s are chemically different, as in binary or multicomponent inhomogeneous systems, the concentration equalization is called chemical (inter-)diffusion. 

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