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Power level

The contribution that Hocking wished to make was to refine the sensor system and the instrumentation paekage so as to be able to incorporate the necessary functionality within a lightweight portable battery operated instrument. This implied a lower power level and very low-noise instrumentation. We aimed also for a low cost instrument able to operate for several hours from fully charged batteries and able to operate at a pull speed of 500mm/second. [Pg.321]

The low MW power levels conuuonly employed in TREPR spectroscopy do not require any precautions to avoid detector overload and, therefore, the fiill time development of the transient magnetization is obtained undiminished by any MW detection deadtime. (3) Standard CW EPR equipment can be used for TREPR requiring only moderate efforts to adapt the MW detection part of the spectrometer for the observation of the transient response to a pulsed light excitation with high time resolution. (4) TREPR spectroscopy proved to be a suitable teclmique for observing a variety of spin coherence phenomena, such as transient nutations [16], quantum beats [17] and nuclear modulations [18], that have been usefi.il to interpret EPR data on light-mduced spm-correlated radical pairs. [Pg.1566]

The small cross-sectional area covered by a laser light beam coupled with the energy density in the beam leads to power levels reaching from milliwatts to many hundreds of kilowatts per square meter. [Pg.398]

An analytical model of the process has been developed to expedite process improvements and to aid in scaling the reactor to larger capacities. The theoretical results compare favorably with the experimental data, thereby lending vahdity to the appHcation of the model to predicting directions for process improvement. The model can predict temperature and compositional changes within the reactor as functions of time, power, coal feed, gas flows, and reaction kinetics. It therefore can be used to project optimum residence time, reactor si2e, power level, gas and soHd flow rates, and the nature, composition, and position of the reactor quench stream. [Pg.393]

I oise Transmission Reduction in HVACSystems. One common use of sound-absorbing treatment is to reduce noise transmission in heating, ventilating, and air-conditioning (HVAC) systems (6). The treatments ate used to reduce the transmission of fan noise and air turbulence noise through ducts into occupied spaces. Noise transmission reduction in duct systems is described in terms of insertion loss, the difference in sound power level or sound pressure level measured at a given location before and after installation of the treatment or sound attenuation, the reduction in sound power between two locations affected by a sound source. The units ate decibels. [Pg.313]

Fig. 10. Speed (90—10% fall time) vs peak wavelength for commercial communication LED emitters. Output power levels in mW are given in parentheses. Fig. 10. Speed (90—10% fall time) vs peak wavelength for commercial communication LED emitters. Output power levels in mW are given in parentheses.
Process variables that must be controlled include the power level, pressure, and flow of the arc gases, and the rate of flow of powder and carrier gas. The spray gun position and gun to substrate distance are usually preset. Substrate temperature can be controlled by preheating and by limiting temperature increase during spraying by periodic intermptions of the spray. [Pg.135]

Experiments and even production operations can be conducted at any frequency providing the radiated and conducted signals meet the apphcable tfi limits for ISM equipment. Tests to certify this stipulation must be carried out before inception of operations. This implies weU-shielded enclosures at high power levels which is expensive but justified in certain apphcations. [Pg.338]

The interaction of microwaves with ferrites (qv) has many complicating features. Low field loss mechanism (41), nonlinear effects, and losses at high power levels (41,43) as well as dielectric losses are among these. [Pg.340]

Use of traveling wave tube (TWT) amplifiers at power levels of hundreds of watts has been proposed (54) for power appHcations, at least when the heating chamber is well shielded. The potential advantage is an improved uniformity of heating when a broad band of frequency is used, ie, excitation of many modes. Disadvantages are high cost and lower (<50%) efficiency of the TWT. [Pg.342]

Some power tubes can be operated without the need for a protective ferrite isolator. One example is the cooker magnetron (700 W) used in modern microwave ovens (57). At higher power levels, such as 25 kW, it is more common to employ a protective ferrite device, particularly in the form of a circulator (58), as shown in Figure 3. This results in a power loss equivalent to a few percentage points in system efficiency. The ferrite circulator prevents reflected power from returning to the power tube and instead directs it into an auxiHary dummy load. The pulling of tube frequency is thus minimised. [Pg.342]

The fourth component is the set of control rods, which serve to adjust the power level and, when needed, to shut down the reactor. These are also viewed as safety rods. Control rods are composed of strong neutron absorbers such as boron, cadmium, silver, indium, or hafnium, or an alloy of two or more metals. [Pg.210]

The relative abundance of neutral SiH and H2 species have been measured as a function of power, pressure, flow rate, and dilution. For low power levels, eg, 5 W, up to 50% of the SiH gas is dissociated and the percentage increases to 80% for a power of 50 W. The decomposition of SiH gas proceeds more readily with lower flow rates. These observations, coupled with infrared (ir) measurements performed on the films, suggest that deposition under conditions in which the silane gas is not entirely decomposed leads to a majority of SiH units, whereas those deposited under conditions in which silane is strongly dissociated contain a majority of dihydride units leading to a deterioration of the semiconductor. Also, when the dwell time of SiH in the plasma region increases, the resultant film exhibits a pronounced peak at 2090 cm from the ir spectra corresponding to S1H2 inclusion. [Pg.358]


See other pages where Power level is mentioned: [Pg.1164]    [Pg.1235]    [Pg.1239]    [Pg.1253]    [Pg.1552]    [Pg.1561]    [Pg.1566]    [Pg.1569]    [Pg.1573]    [Pg.1574]    [Pg.261]    [Pg.336]    [Pg.113]    [Pg.196]    [Pg.130]    [Pg.512]    [Pg.175]    [Pg.312]    [Pg.8]    [Pg.10]    [Pg.133]    [Pg.134]    [Pg.199]    [Pg.402]    [Pg.53]    [Pg.135]    [Pg.337]    [Pg.341]    [Pg.344]    [Pg.345]    [Pg.182]    [Pg.210]    [Pg.211]    [Pg.212]    [Pg.214]    [Pg.219]    [Pg.224]    [Pg.224]   
See also in sourсe #XX -- [ Pg.348 , Pg.349 ]

See also in sourсe #XX -- [ Pg.220 , Pg.227 ]




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