Solid-state optoelectronics

Interesting systems, mainly with respect to solid-state optoelectronics and chalco-genide glass sensors (due to ionic conductivity effects) are found among the Group IIIB (13) and IVB (14) chalcogenides, such as the p-type semiconductors MSe (M = Ga, In, Sn), SnS, and GeX (X = S, Se, Te). Some of the IIIB compounds. 

Shortly after the observation of visible PL from micro PS at room temperature [Cal], the first EL from a solid-state device was reported [Ri2]. This initiated vigorous research, because silicon-based optoelectronic devices seemed to be within reach. After several years of intense research the potential and the main problems involved with the EL from PS have been clarified. 

A useful source of continuously tunable radiation from the near UV to the near-IR with unexplored potential in fluorescence studies is the optical parametric oscillator (OPO). These devices have been around since the 1960s(73) and have received a lot of coverage recently in laser and optoelectronic journals/74 This resurgence of interest in OPOs has been brought about by recent improvements in nonlinear crystals and the development of all-solid-state pump-laser sources with the required levels of coherence and intensity. 

Whereas in solution the photoluminescence efficiency (Of) of poly(3-alkylthiophenes) (PATs) is 3(Mf)%, it drastically drops to 1-4% and lower in the solid state due to the increased contribution of nonradiative decay via interchain interactions and ISC caused by the heavy-atom effect of sulfur (97MM4608). Optoelectronic devices of this type of compounds have been studied (98SCI(280)1741 06SM(156)1241). Fibers of poly(3-hex-ylthiophene) for photovoltaic applications have been described (07MI1377). Poly(3-octylthiophene) showed a TTA band at 800 nm (96JPC15309). The photophysical properties of some alkyl and aryl polythiophenes have been studied (03JCP(118)1550). The absorption maximum of poly(3-octylthiophene) is at 438 nm, while the fluorescence was... 

Figure 3.5. Engineering drawing of a solid-state photodetector with integrated amplifier, current-to-voltage converter, and temperature controller, (courtesy PerkinElmer Optoelectronics)...

The distinction between the two classes of materials considered in this Section per tains to the presence or absence of mixing at the molecular level. Thus in alloys, solid solutions of two or more semiconductors are formed where the lattice sites are interspersed with the alloy components. Semiconductor alloys, unlike their metallic counterparts, have a much more recent history and their development driver has been mainly optoelectronic (e.g., solid state laser) applications. In mixed semiconductor composites, on the other hand, the semiconductor particles are in electronic contact but the composite components do not undergo mixing at the molecular level. 

Zinc selenide (yellow) and telluride (brown) have similar stractures to those of the sulfide, both existing in both wurtzite and zinc blende modifications. The selenide is used with zinc sulfide as a phosphor. It has the interesting property that it can act as a bine-green solid state laser bine-green laser action in solids is rare (most solid-state lasers function towards the red end, 635 nm or more, of the spectrum). At room temperature, laser action with the selenide at a wavelength of 525 nm (green) is observed and at -196°C at 495 nm (bine). Unfortunately the laser is relatively short-lived. Zinc telluride is a wide band gap semicondnctor whose electron transport properties in the form of thin films of stoichiometric and nonstoichiometric forms have been mnch studied. Its applications in optoelectronics, for example, as an optical recording material, have been reviewed. ... 

The communications revolution also relies on a diverse set of CVD technologies. Some components are similar to those used in silicon microelectronics, but many are unique, involving complex epitaxial heterostructures of SiGe or compound semiconductor (e.g., AlGaAs) alloys that are required to yield high frequency (1-100 GHz) device operation. The communication revolution also relies on optoelectronic components, such as solid state diode lasers (another complex heterostructure device), and these devices are often grown by CVD. - Even the fiberoptic cables that transmit the optical component of the communications network are manufactured using a CVD technique to achieve the desired refractive index profile. ... 

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