SiO2 film

Boron profiles by NDP in cadmium mercury telluride, an important infrared detector material, have been measured by Ryssel, et al. (31) and Vodopyanov, et al. (32). Cervena, et al. ( ) used NDP to study the implantation profiles of °B in several photoresists used in masking operations and to determine range values for Implants in several types of grown or deposited SIO2 films. 

The dielectric properties of the SOG films cured at 400°C are, in general, inferior to those of thermal SIO2 or low temperature CVD SIO2 films. The high dielectric constant of 203 indicates the presence of a significant amount of polarizable material in the SOG film. This polarizable species is H2O that is adsorbed into the micropores of the film, the adsorption being facilitated by presence... 

All three films show the well-known characteristic absorption bands of SIO2 films at 1080 cm" (Sl-0 stretch), 800 cm l (O-Sl-0... 

Figure 3.3. (a) Experimental (solid line) and calculated (dashed line) p-polarized ATR spectra of 10-nm SIO2 film on SI obtained using 60° Ge prism (see Insert). Reprinted, by permission, from C. H. Bjorkman, T. YamazakI, S. Miyazaki, and M. HIrose, J. Appl. Phys. 77, 313 (1995), p. 316, Fig. 6. Copyright 1995 American Institute of Physics, (b) Experimental ATR spectra of 10-nm WO3 layer on 45° Ge prizm s-polarizatlon (dashed line) and p-polarizatlon (solid line). Adapted, by permission, from T. A. Taylor and H. H. Patterson, Appl. Spectrosc. 48, 674 (1994), p. 677, Fig. 6. Copyright 1994 Society for Applied Spectroscopy.

Triple-layer Ti02/SiO2/SiO2 film deposited on Si by spinning. Si02/Si0j interface is unresolvable. Bar = 100 nm. From Pettit and Brinker [73],... 

The sol-gel process to prepare SIO2 glass fibers and T102 films has been reviewed. It has been known that the hydrolysis conditions such as molar ratio of water to alkoxide and reaction temperature are critical to the desired forms of the gel product (fiber, film or bulk). Some properties of the resultant products have been examined. Especially, Ti02 films have been attempted to use as a photoanode for decomposition of water, and their photoelectrochemical properties are described in comparison with the results previously obtained for single crystal and polycrystalline TiC>2, and are discussed in terms of the microstructure of the film. 

The purpose of the CIM is to attract ions present in the solution the incorporated ions represent an equivalent charge near the SiO2 and it is equivalent to a voltage applied to the gate. In particular cases the CIM can be the SiO2 itself or a thin film of S13N4 or other insulators. As an example, in order to obtain an ISFET sensitive to K+ ions in solution, valynomicine may be utilized as a CIM. 

Depending on interfacial properties, some catalyst powder films are not stable in flowing solvent. For example, SiO2-containing materials have been reported to stick badly to the IRE in flowing solvent (5P). In such a situation, the catalyst particles may be fixed to the IRE by addition of a small amount of a polymer such as polyethylene before contacting of the slurry with the IRE 59,60. Films can also be prepared by dip- and spin coating. 

Figure 15.24 shows the fabrication process of the optical filter on a fluorinated polyimide substrate. First, the low-thermal-expansion-coefficient PMDA/TFDB poly(amic acid) solution was spin-coated onto a Si substrate and baked. Then alternate TiO2 and SiO2 layers were formed on the polyimide film by ion-assisted deposition. The multilayered polyimide film was diced and peeled off from the Si substrate. In this way, thin optical filters on a fluorinated polyimide substrate are easily fabricated. 

Figure 9.30 AFM images of polyethylene films formed on the planar Cr0,/SiO2/Si( 100) model catalyst. The small white stripes are lamellar crystals. These form the well-known spherulite superstructure upon crystallization from the melt. Depending on the layer thickness, spherulite growth stops at different stages of development (adapted from Thiine et at. [901).

III. MOLECULAR STRUCTURE ANALYSES OF SIO2 THIN FILMS... 

Ge or P (POM-silica composite films) Na6W7024-Si02 H4W10O32-SiO2... 

Surface-enhanced Raman scattering detected temperature programmed desorption optical properties, nanostructure, and stability of silver film over SiO2 nanosphere. Journal of Physical Chemistry B, 105, 6907-6915. 

The sp -hybridized carbon films can be used as injector electrodes to provide the injection of electron current into dielectrics such as SiO2 and other... 

Dalacu, D., Martinu, L. Spectroellipsometric characterization of plasma-deposited Au/SiO2 nanocomposite films. J. Appl. Phys. 87, 228-235 (2000)... 

Granqvist, C.G., Hunderi. O. Conductivity of inhomogeneous materials Effective-medium theory with dipole-dipole interaction. Phys. Rev. B 18, 1554-1561 (1978) Optical properties of Ag-SiO2 cermet films A comparison of effective-medium theories. Phys. Rev. B 18, 2897-2906 (1978)... 

Scalisi, A.A.. Compagnini, G., D Urso, L., Puglisi, O. Nonlinear optical activity in Ag-SiO2 nanocomposite thin films with different silver concentration. Appl. Surf. Sci. 226,237-241 (2004)... 

Tanahashi, I., Manabe, Y., Tohda, T., Sasaki, S., Nakamura, A. Optical nonlinearities of Au/SiO2 composite thin films prepared by a sputtering method. J. Appl. Phys. 79, 1244-1249 (1996)... 

Lee, M., Kim, T.S., Choi, Y.S. Third-order optical nonlinearities of sol-gel-processed Au-SiO2 thin films in the surface plasmon absorption region. J. Non-Cryst. Solids 211, 143-149 (1997)... 

Liao, H.B., Xiao, R.F., Fu, J.S., Wang, H., Wong, K.S., Wong, G.K.L. Origin of third-order optical nonlinearity in Au SiO2 composite films on femtosecond and picosecond time scales. Opt. Lett. 23, 388-390 (1998)... 

Pinion, N., Palpant, B., Prot, D., Charron, E., Debrus, S. Third-order nonlinear optical response of Au SiO2 thin films Influence of gold nanoparticle concentration and morphologic parameters. Eur. Phys. J. D 19, 395 02 (2002)... 

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