SiO2 film oxidation

These findings can be summarized by the following film growth behaviour on completely amorphous oxidic substrates like Sio2. 

There is universal agreement that the rate of thermal oxidation of silicon decreases as the SiO film grows(4-6). It has been established that the oxidation reaction that produces SiO2 occurs at the Si-SiO2 interface(7-9). From all the available information, the SiO2 formed in an impurity free environment at... 

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