Silicon thickness

For the manufacture of silicon semiconductor devices, oxide thicknesses of from <10 to >1000 nm are required on sHces of single-crystal silicon. These oxide layers are formed at elevated temperatures, generally at about 1000°C, in an atmosphere of either oxygen or steam. Usually the oxidation is at atmospheric pressure, but sometimes, to speed the oxidation rate, pressures of several atmospheres are used. Oxidation consumes a silicon thickness equal to about 0.4 the thickness of the oxide produced (grown). The thickness of the oxide, V (4) is approximately given by equation 1 ... 

Figure 2. Flash diameter vs pore wall thickness for difFerent porosity in porous silicon impregnated with NaClOi. Porous silicon thickness was 30 pm.

Figure 14.5 Calculated normal Incidence reflectivity curve for a molybdenum-silicon multilayer mirror with number of bIlayers 50. The molybdenum thickness Is 2.7 nm and the silicon thickness Is 4.2 nm. (Reprinted with permission from Ref. 44. 2009 McGraw-Hill.)...

Figure 8. Radial distribution function of liquid silicon. Thick line represents the TBMD result. Thin line is the result obtained by the Car-Parrinello method [47]. (From Ref. 33.)...

Fig. XI-3. Ellipsometric film thickness as a function of number of layers of methyl 23-(trichlorosilyl)tricosanoate on silicon wafers (Ref. 33).

Thin oxide films may be prepared by substrate oxidation or by vapour deposition onto a suitable substrate. An example of the fomrer method is the preparation of silicon oxide thin-films by oxidation of a silicon wafer. In general, however, the thickness and stoichiometry of a film prepared by this method are difficult to control. 

Antireflection coatings are used over the silicon surface which, without the coating, reflects ca 35% of incident sunlight. A typical coating consists of a single layer of a transparent dielectric material with a refractive index of ca 2, which is between the index of siUcon and ait or cover material. Materials such as titanium dioxide, tantalum pentoxide, Ta20, or siUcon nitride, Si N, ca 0.08-p.m thick are common. The coating and a physically textured... 

A concept gaining support is a hybrid approach to making thick crystalline silicon efficient in thin layers. Although conventional crystalline silicon cells have gone from 400—600-p.m thick to 200—300-p.m, thin-film crystalline silicon cells have reached 10% efficiency while being only 10-p.m thick. 

Copper and Copper Alloys Seamless copper, bronze, brass, copper-nickel-aUoy, and copper-silicon-aUoy pipe and tubing are produced by extrusion. Tubing is available in outside-diameter sizes from Vi6 to 16 in and in a range of wall thicknesses varying from 0.005 in for the smallest tubing to 0.75 in for the 16-in size. Tubing is usually specified by outside diameter and wall thickness. 

Copper-silicon alloy (96 percent cooper, 3 percent silicon, 1 percent manganese), per ASTM B315, is furnished as seamless pipe and welding fittings in Schedule 10 and regular and extra-strong copper pipe thicknesses. It is easier to weld than copper. 

Internal surfaces were covered with a tan deposit layer up to 0.033 in. (0.084 cm) thick. The deposits were analyzed by energy-dispersive spectroscopy and were found to contain 24% calcium, 17% silicon, 16% zinc, 11% phosphorus, 7% magnesium, 2% each sodium, iron, and sulfur, 1% manganese, and 18% carbonate by weight. The porous corrosion product shown in Fig. 13.11B contained 93% copper, 3% zinc, 3% tin, and 1% iron. Traces of sulfur and aluminum were also found. Near external surfaces, up to 27% of the corrosion product was sulfur. 

For a lower range of motors, say up to a frame size of 355, the silicon steel normally used for stator and rotor core laminations is universally 0.5-0.65 mm thick and possesses a high content of silicon for achieving better electromagnetic properties. The average content of silicon in such sheets is of the order of 1.3-0.8% and a core loss of roughly 2.3-3.6 W/kg, determined al a flux density of I W[ym and a frequency of 50 Hz. For medium-sized motors, in frames 400-710, silicon steel with a still better content of silicon, of the order of 1.3-1.8% having lower losses of the order of 2.3-1.8 W/kg is prefeired, with a thickness of lamination of 0.5-0.35 mm. 

To meet this requirement, the use of steel with a still better silicon content and lower losses is imperative. A cold-rolled non-grain oriented (CRNGO) type of sheet steel is generally used for such applications, in the thickness range of 0.35-0.5 mm, with a higher silicon content of the order of 2.0-1.8% and losses as low as 1.0-1.5 W/kg. 

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