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Production silicon carbides

Table 6. Silicon Carbide Production in the United States and Canada... Table 6. Silicon Carbide Production in the United States and Canada...
Osterman JW, Greaves JA, Smith Tf, et al Work related decrement in pulmonary function in silicon carbide production workers. Brjlnd Med 46 708-716, 1989... [Pg.631]

Silicon carbides are generally synthesized by the pyrolysis of precursors, prepared by liquid phase methods. One possible way for precursor synthesis is the addition of carbon black or sucrose, to a gelling silica.8 In this method, the carbon is introduced from an external source. A more intimate contact between the carbon and silicon in the precursor is assured with the use of organometallic polymer precursors. The use of silane polymers for silicon carbide production was initiated by Yajima.9,10 Polymers having a -[Si-C]- backbone are crosslinked and pyrolysed to yield SiC." In the initial work, dimethyldichlorosilane was used as a starting monomer, which was subjected to a sodium catalyzed polymerization (reaction (C)). [Pg.476]

Smith, T. J., Hammond, S. K., Laidlaw, R, and Fine, S. (1984). Respiratory exposures associated with silicon carbide production Estimation of cumulative exposures for an epidemiological study. Br J Ind Med 41, 100-108. [Pg.782]

Figure 7-93. Schematic of reactor for silicon carbide production in discharge zone of hydrocarbon plasma (1) RF generator (2, 3) inlet of reagents (4) distributor of initial products (5) porous wall (6) discharge zone (7) inductor (8) quenching zone (9) heat exchanger (10) filter. Figure 7-93. Schematic of reactor for silicon carbide production in discharge zone of hydrocarbon plasma (1) RF generator (2, 3) inlet of reagents (4) distributor of initial products (5) porous wall (6) discharge zone (7) inductor (8) quenching zone (9) heat exchanger (10) filter.
Figure 6. Silicon carbide production by the ESK process [7, 30] (a) longitudinal and (b) radial cross-sections through the furnace. Figure 6. Silicon carbide production by the ESK process [7, 30] (a) longitudinal and (b) radial cross-sections through the furnace.
The SiC content of silicon carbide products is now usually determined by measuring the carbon contents. The total carbon content is determined by combustion of the sample in a stream of oxygen at 1050°C in the presence of lead borate. The CO2 produced is absorbed in Ba(C104)2 solution and determined by coulometry [236,237]. An alternative technique is to oxidize the SiC with oxygen in a high-frequency induction furnace containing a flux metal, and to detect the CO2 produced by IR absorption. [Pg.734]

Petrolerun Refineries Phosphoric Acid Production Silicon Carbide Production Soda Ash Production Titanium Dioxide Production... [Pg.421]

KAMELMACHER, E. - Design and Performance of Silicon Carbide Product Lubricated Bearings. Institution of Mechanical Engineers Proceedings, Vol.l97A,... [Pg.138]

Zirconia, ZrOj, is made from the natural hydrated mineral, or from zircon, a silicate. Silicon carbide and silicon nitride are made by reacting silicon with carbon or nitrogen. Although the basic chemistry is very simple, the processes are complicated by the need for careful quality control, and the goal of producing fine (<1 jiva) powders which, almost always, lead to a better final product. [Pg.194]

The fuel for the Peach Bottom reactor consisted of a uranium-thorium dicarbide kernel, overcoated with pyrolytic carbon and silicon carbide which were dispersed in carbon compacts (see Section 5), and encased in graphite sleeves [37]. There were 804 fuel elements oriented vertically in the reactor core. Helium coolant flowed upward through the tricusp-shaped coolant channels between the fuel elements. A small helium purge stream was diverted through the top of each element and flowed downward through the element to purge any fission products leaking from the fuel compacts to the helium purification system. The Peach... [Pg.448]

Silicon carbide was made accidently by E. G. Acheson in 1891 he recognized its abrasive power and coined the name carborundum from carbo(n) and (co)rundum (AI2O3) to indicate that its hardness on the Mohs scale (9.5) was intermediate between that of diamond (10) and AI2O3 (9). Within months he had formed the Carborundum Co. for its manufacture, and current world production approaches 1 million tonnes annually. [Pg.334]

Experimental applications include the direct deposition of patterns as small as 0.5 im in semiconductor applications using holographic methods, and the production of rods and coreless boron and silicon carbide fibers (see Ch. 19). [Pg.127]

Fluidized-bed CVD was developed in the late 1950s for a specific application the coating of nuclear-fuel particles for high temperature gas-cooled reactors. PI The particles are uranium-thorium carbide coated with pyrolytic carbon and silicon carbide for the purpose of containing the products of nuclear fission. The carbon is obtained from the decomposition of propane (C3H8) or propylene... [Pg.133]

Silicon carbide (SiC) is a major industrial material with a considerable number of applications. CVD plays a significant role in its development and production, SiC is a covalent carbide with two phases a and [3. The phase of major interest here is pSiC, which has a cubic zinc blend structure. It is the one reported here. [Pg.243]

CVD is a maj or process in the production of thin films of all three categories of electronic materials semiconductors, conductors, and insulators. In this chapter, the role of CVD in the fabrication of semiconductors is reviewed. The CVD production of insulators, conductors, and diffusion barriers is reviewed in the following chapter. The major semiconductor materials in production or development are silicon, germanium, ni-V and II-VI compounds, silicon carbide, and diamond. [Pg.352]

CVD is used in the industrial production of inorganic structural fibers such as boron and silicon carbide. Boron fibers are, in... [Pg.464]

The process competes with the traditional method of fiber production in which the precursor material is melted, usually in an arc furnace, then drawn through spinnerets and spun or impinged by high pressure air. The melt-spin process is not well suited to materials with high melting points such as zirconia, silicon carbide, or pure alumina. [Pg.465]

Two fibers are presently produced by CVD on a commercial scale boron and silicon carbide. The production of these two fibers requires a monofilament starter core capable of being heated resistively such as a tungsten or graphite fiber. I l The deposition apparatus is shown schematically in Fig. 19.1. [Pg.467]

CVD silicon carbide fibers are a recent development with prom-ising potential which may take over some of the applications of CVD boron fibers or other refractory fibers, providing that the production cost can be reduced. [Pg.470]

The very first question that comes to mind when dealing with giant telescopes is the cost-effective feasibility of its optics. Assuming classical materials for the segments blanks, however, there is no need for a very substantial increase in production capacity from existing suppliers provided that the segment size remains below 2-m. Moderately lightweight Silicon Carbide is also considered as a serious and potentially cost-effective candidate, for its superior thermal performance and specific stiffness. [Pg.77]


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See also in sourсe #XX -- [ Pg.359 ]

See also in sourсe #XX -- [ Pg.137 , Pg.138 ]




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