Electronic materials semiconductors

Trace contaminants in the phosphoms may be deterrnined by oxidation of the phosphoms by various techniques. The metals are then deterrnined by an inductively coupled plasma spectrophotometer or by atomic absorption. The most important trace metal is arsenic, which must be reduced in concentration for food-grade products. Numerous other trace metals have become important in recent years owing to the specifications for electronic-grade phosphoric acid requited by the semiconductor industry (see Electronic materials Semiconductors). Some trace elements must be reduced to the low ppb range in phosphoric acid to comply. 

Heterogeneous Photocatalysis. Heterogeneous photocatalysis is a technology based on the irradiation of a semiconductor (SC) photocatalyst, for example, titanium dioxide [13463-67-7] Ti02, zinc oxide [1314-13-2] ZnO, or cadmium sulfide [1306-23-6] CdS. Semiconductor materials have electrical conductivity properties between those of metals and insulators, and have narrow energy gaps (band gap) between the filled valence band and the conduction band (see Electronic materials Semiconductors). 

The increase has, however, not been in direct proportion to the increase in the number of semiconductor devices produced, because manufacturing yields have increased dramatically since the sihcon transistor became commercially available in 1954 (see Electronic materials Semiconductors, silicon-BASEd). 

CVD is a maj or process in the production of thin films of all three categories of electronic materials semiconductors, conductors, and insulators. In this chapter, the role of CVD in the fabrication of semiconductors is reviewed. The CVD production of insulators, conductors, and diffusion barriers is reviewed in the following chapter. The major semiconductor materials in production or development are silicon, germanium, ni-V and II-VI compounds, silicon carbide, and diamond. 

Gases used in the manufacture of semiconductor materials fall into three principal areas the inert gases, used to shield the manufacturing processes and prevent impurities from entering the source gases, used to supply the molecules and atoms that stay behind and contribute to the final product, and the reactive gases, used to modify the electronic materials without actually contributing atoms or molecules. 

In 1973 the Semiconductor Equipment and Materials Institute (SEMI) held its first standards meeting. SEMI standards are voluntary consensus specifications developed by the producers, users, and general interest groups in the semiconductor (qv) industry. Examples of electronic chemicals are glacial acetic acid [64-19-7] acetone [67-64-17, ammonium fluoride [12125-01 -8] and ammonium hydroxide [1336-21 -6] (see Ammonium compounds), dichloromethane [75-09-2] (see Cm.OROCARBONSANDcm.OROHYDROCARBONs), hydrofluoric acid [7664-39-3] (see Eluorine compounds, inorganic), 30% hydrogen peroxide (qv) [7722-84-1] methanol (qv) [67-56-1] nitric acid (qv) [7697-37-2] 2-propanoI [67-63-0] (see Propyl alcohols), sulfuric acid [7664-93-9] tetrachloroethane [127-18-4] toluene (qv) [108-88-3] and xylenes (qv) (see also Electronic materials). 

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

ALLOYS, PURE silicon) and in epitaxial siUcon deposition (see Electronic materials Integrated circuits Semiconductors) as selective reducing agents as monomers and as elastomer intermediates (see Elastomers, SYNTHETIC). Not least is the use of these materials as intermediates for production of other silanes and sihcones. 

The wide use of p-block and early transition metal chalcogenide materials for electronics applications (semiconductors, semi-metals, battery materials, etc.) has resulted in a large amount of work concerned with CVD using mixtures of metal halides and chalcogenoethers as dual source precursors and preformed complexes as single sources.166... 

All the compounds of the family (Al, Ga, In)-(P, As, Sb) are semiconductors and are well-known electronic and opto-electronic materials. They are often indicated as 13-15 compounds meaning compounds formed by the combination of one element of the 13 th group with one of the 15 th of the Periodic Table. In the semiconductor nomenclature these compounds are also called III/V compounds on the basis of old conventions in numbering the groups of the Periodic Table. Several synthetic approaches to the preparation and purification of the compounds of this family have therefore been considered. A selection of these methods will be reported as an illustration of the variety of methodologies which find increasing applications in intermetallic and, more generally, in solid-state chemistry. 

Electronic properties semiconductor and metal conductivity, magneto-resistance, emission of electrons, electronic devices of the molecular size, information recording, diodes, field transistors, cold cathodes, materials for displays, quantum wires and dots, cathodes for X-ray radiation, electric probes, etc. 

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