Semiconductors field effect applications

Chang, J. P., et al. (2001), Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application, J. Vac. Sci. Technol. B Microelectron. Nanometer Struct., 19(5), 1782-1787. 

Metal oxide semiconductor field effect transistors (MOSFETs) constitute other materials with applicability in the development of biosensors. Usually, a MOSFET structure consists of a metal gate on top of an oxide layer, tyqjically Si02 [189]. The catalytic properties of these sensors depend upon the type of the gate metal as well as the temperature at which the MOSFET is operated. The most used catalytic metals used as gate materials are Pd (is a good... 

The multiscale systems approach is directly applicable to problems in nanotechnology, molecular nanotechnology and molecular manufacturing. The key ideas have been illustrated with examples from two processes of importance to the semiconductor industry the electrodeposition of copper to form on-chip interconnects and junction formation in metal oxide semiconductor field effect transistors. 

Different types of SiC Field Effect Transistors, Metal Oxide Semiconductor Transistors (MOSFETs), Metal Semiconductor Field Effect Transistors (MESFETs), and Junction Field Effect Transistors (JFETs) compete for future applications in high temperature and harsh environment electronics. This Datareview details these various types of FETs, the structures used and the performances obtained. Interesting recent developments and potential applications, such as FET integrated circuits, a hybrid operational amplifier and an inverter circuit are also outlined. 

There is much interest in the application of PVDF in medical imaging because of its close acoustic impedance match with both tissues. Monolithic silicon-PVDF devices have been produced in which a sheet of PVDF is bonded to a silicon wafer containing an array of metal oxide semiconductor field effect transistor (MOSFET) amplifiers arranged in such a way that when an acoustic wave is detected, the electrical signal resulting from the piezoelectric action in the PVDF appears directly on the gate of an MOS transistor. The device is therefore known as a piezoelectric oxide semiconductor field effect transistor (POSFET). 

Directed self-assembly shows promise in advanced lithography and a variety of other applications that have less complex requirements. For example, directed self-assembly could be used for enhancing etch selectivity, placing dopants in ordered arrays, or generating high-density, close-packed electrodes in capacitor arrays [6]. Additionally, the assembled nanostructures could be used for fabricating densely packed porous templates [12-14] or membranes [15, 16] at the nanoscale. Other potential applications of assembled block copolymer thin films include the fabrication of MOSFETs (metal-oxide-semiconductor field-effect transistors) [17], quantum dots [18], high surface area devices [19, 20], photovoltaic devices [21], and bit patterned media [22-24]. 

Shinwari MW, Deen MJ, Landheer D (2007) Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design. Microelectron Reliab 47 2025-2057... 

Figure 3.25 A schematic of a typical enhancement-mode n-p-n metal-insulator-semiconductor field effect transistor. The device is normally off and eonduetion is enhanced by application of a negative gate voltage relative to the source, creating an n-type channel. The source-to-drain voltage adds to the gate bias when turned on, which is why the channel is wider at one side. The hatched area under the gate indicates an optional heavily-doped polycrystalline semiconductor region as part of the gate (see also Figure 3.27). One must further prevent current flow to the substrate as this would turn the device on as if it were a bipolar junction transistor and the base were the substrate.

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

Magnetic field effects on the photoelectrochemical reactions of photosensitive electrodes are very important for practical applications of the MFEs in controlling the photoelectronic functions of molecular devices. Previously, we have examined MFEs on the photoelectrochemical reactions of photosensitive electrodes modified with zinc-tetraphenylporphyrin-viologen linked compounds [27, 28] and semiconductor nanoparticles [29, 30[. However, MEEs on the photoelectrochemical reactions of photosensitive electrodes modified with nanoclusters have not yet been reported. 

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