Seed sputtering

A cross-sectional view of a C. digitata seed is shown in a scanning electron micrograph (SEMT in Figure 1. The section was treated with hexane before being sputter-coated (12) and is morphologically identical to a similar view of C. pepo (12). The seed coat comprises the somewhat thin outer boundary of TRe section and the remainder is composed of two cotyledons separated by the first "true" leaves of the embryo. 

In a frying pan, heat the oil over medium-high heat. Add the mustard seeds and cover. When the seeds pop, toss in the dried red chilies and fry for a few seconds then, if using, add the fresh curry leaves (watch for sputtering) and fry briefly until they finish crackling. Add the mixture to the squash and stir to combine. 

After the bottom pole and insulator, a microwinding Cu coil is electrode-posited [121]. The insulator has to be prepared for the electrodeposition of Cu. This preparation involves the deposition of Cr/Cu bilayer by sputtering or evaporation. First, a thin layer (10 nm) of Cr is deposited onto the insulator. The function of the Cr layer is to provide a bonding layer between the insulator and Cu. A thin (50-100 nm) layer of Cu seed layer is then sputter deposited on Cr layer to provide sufficient electrical conductivity for subsequent electrodeposition of Cu. Cu is electrodeposited using deposition-through-mask technique. After electrodeposition of Cu coil, an insulator layer is deposited between the coil and the top pole layer. The top Permalloy pole is electrodeposited in the same way as the bottom pole layer, on thin sputter-deposited Permalloy underlayer (50-100 nm). The top and bottom pole layers are in contact. Finally, Cu interconnect pads, about 25-pm thick, are electrodeposited. The entire structure, poles and coil, is protected by an overcoat, usually sputtered AI2O3. The dimensions... 

Fig. 7.7 MFM images at the ac-demagnetized states of the Co/Pd multilayered films (a) with the sputter-deposited 10 nm-thick Pd seedlayer (film I) and (b) with the Pd cluster seeds (film 11). Plan-view TEM bright field images of (c) film I and (d) film II [31]...

The top and the bottom coils were fabricated using a damascene process. Coil trenches were formed in a SiO insulating layer using reactive ion etching. A seed layer for electrodeposition such as a Cu/Ti stacked layer was sputter-deposited onto the etched surface. Then, the Cu electrically conductive material was electrodeposited on the seed layer using generic copper sulfate solution. Finally, lapping was performed... 

Fig. 13.7 Template Synthesis A conductive seed layer is sputtered on the backside of the template. The nanowires are electrodeposited in the template. The seed layer is removed by physical or chemical means. The template is dissolved to yield a colloid of nanowires in solution...

As mentioned in the introduction, exclusion of sputtered seeds is considered to be highly advantageous for future ULSI technology. In general, however, a seed layer fabricated by sputtering is essential to initiate the electroless deposition reaction of... 

Osaka T et al (2002) Fabrication of electroless NiReP barrier layer on SiO without sputtered seed layer. J Electrochem Solid-State Lett 5 C7-C10... 

Only three methods proved to yield beams of an intensity high enough to perform excitation experiments beam production by ion neutralization, sputtered beams and seeded supersonic beams. The merging beam technique26 does not seem to be suited for the measurement of optical excitation cross sections because of the very long beam interaction path. 

Plating experiments were performed on sections of both blanket and patterned wafers. The wafers were p-type device quality wafers subjected to wet oxidation at 1050°C for 1.25 hours to develop 7pm of oxide. A copper seed layer was sputtered at a base pressure of 10 7 Torr and an argon pressure of 5mTorr. The sputtered layers were 30nm thick and exhibited a resistivity of 2.1pO cm. The patterned wafers had a 0.5 pm minimum feature size with a 2 1 aspect ratio. 

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