Thin sputtering

Hattori et al. [140] investigated various overcoats for the thin sputtered y-Fe203 and plated CoNiP films. Rhodium overcoats exhibit defects caused by corrosive attack of the plating solution on the magnetic layer (prior to the corrosion test) ... 

Fig. 13. Effects of CO level (ppm) in the hydrogen feed stream on the performance of a PEFC at 80 °C. Both electrodes were based on an ionomer-impregnated Pt/C catalyst and thin sputtered platinum film, of total loading 0.45 mg Pt/cm [17].

After the bottom pole and insulator, a microwinding Cu coil is electrode-posited [121]. The insulator has to be prepared for the electrodeposition of Cu. This preparation involves the deposition of Cr/Cu bilayer by sputtering or evaporation. First, a thin layer (10 nm) of Cr is deposited onto the insulator. The function of the Cr layer is to provide a bonding layer between the insulator and Cu. A thin (50-100 nm) layer of Cu seed layer is then sputter deposited on Cr layer to provide sufficient electrical conductivity for subsequent electrodeposition of Cu. Cu is electrodeposited using deposition-through-mask technique. After electrodeposition of Cu coil, an insulator layer is deposited between the coil and the top pole layer. The top Permalloy pole is electrodeposited in the same way as the bottom pole layer, on thin sputter-deposited Permalloy underlayer (50-100 nm). The top and bottom pole layers are in contact. Finally, Cu interconnect pads, about 25-pm thick, are electrodeposited. The entire structure, poles and coil, is protected by an overcoat, usually sputtered AI2O3. The dimensions... 

Sputtering has been used to produce thin (1 pm) HA coatings. The deposited films are amorphous because the sputtered components do not possess enough kinetic energy to recombine in a crystalline form. Heat treatment at 500°C is enough to crystallize the amorphous film. Durability of thin sputtered films in the body has not yet been demonstrated. 

Broughton JN, Brett MJ (2004) Investigation of thin sputtered Mn films for electrochemical capacitors. Electrochim Acta 49 4439 1446... 

Sonentie S, Lizarraga L, Papaioannou El, Vayenas CG, Vemonx P (2010) Permanent electrochemical pnnnotirai of C3H8 oxidation over thin sputtered Pt films. Electrochem Commun 12 1133-1135... 

The most common electrode design currently employed is the thin-film design, characterized by the thin Nafion film that binds carbon-supported catalyst particles. The thin Nafion layer provides the necessary proton transport in the catalyst layer. However, this is a significant improvement over the PTFE-bound catalyst layer, which requires the less effective impregnation of Nafion . Sputter deposited catalyst layers have been shown to provide some of the lowest catalyst loadings, as well as the thinnest layers. The short conduction distance of the thin sputtered layer dissipates the requirement of a proton-conducting medium, which can simplify production. The performance of the state of the art sputtered layer is only slightly lower than that of the present thin-film convention [125]. 

Fig. 18. Ideal and real sputter-depth profiles for thin film of A and substrate B.

The requirements of thin-film ferroelectrics are stoichiometry, phase formation, crystallization, and microstmctural development for the various device appHcations. As of this writing multimagnetron sputtering (MMS) (56), multiion beam-reactive sputter (MIBERS) deposition (57), uv-excimer laser ablation (58), and electron cyclotron resonance (ECR) plasma-assisted growth (59) are the latest ferroelectric thin-film growth processes to satisfy the requirements. 

Low pressure argon is the usual medium for industrial sputtering of metals and other soHd films (100) (see Thin films, film formation techniques). 

Thin-film media can be made by various technologies, eg, sputtered deposited Co—Cr—X films for longitudinal appHcations, laminated media for hard disk apphcation, metal evaporated tape, and multilayers for possible appHcations in magnetooptic recording. 

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