Scanning tunneling microscopy semiconductors

Ph. Ebert, B. Engels, P. Richard, K. Schroeder, S. Bluegel, C. Domke, M. Heinrich, K. Urban. Contribution of surface resonances to scanning tunneling microscopy images (110) surfaces of III-V semiconductors. Phys Rev Lett 77 2997, 1996. 

Section 6.2.1 offers literature data on the electrodeposition of metals and semiconductors from ionic liquids and briefly introduces basic considerations for electrochemical experiments. Section 6.2.2 describes new results from investigations of process at the electrode/ionic liquids interface. This part includes a short introduction to in situ Scanning Tunneling Microscopy. 

Bellec A, Ample F, Riedel D, Dujardin G, Joachim C (2009) Imaging molecular orbitals by scanning tunneling microscopy on a passivated semiconductor. Nano Lett 9 144... 

Wilson, R. J., Chiang, S., and Chambliss, D. D. (1990). Imaging semiconductors, metals and molecules with scanning tunneling microscopy. Aust. J. Phys. 43, 393-400. 

Kubby, J. A. and Boland, J. J. Scanning tunneling microscopy of semiconductor surfaces. Surface Science Report 26, 61 (1996). 

Scanning tunneling microscopy (STM), 787. 1157 bioelectrochemistry and, 1159 electrochemistry and. 1158 electrodeposition and. 1310 nanotechnology, 1345 piezoelectric crystal, 1158 tunneling current. 1157 underpotential deposition, 1313, 1315 Scavanger electrolysis, electrodeposition, 1343 Schlieren method, diffusion layer. 1235 Schmickler, 1495,1510 Schrodinger equation, 1456, 1490 Schultze 923,1497.1510 Screw dislocation, 1303, 1316, 1321, 1326 Secondary reference electrode, 815, 1109 Self-consumed electrode, 1040 Semiconductors... 

Micrometer and atomic (nm) resolution can be obtained in the study of semiconductors in their function as electrodes. The two most prominent techniques used at the end of the century were scanning laser spot (SCS) and scanning tunneling microscopy. 

The resolution obtained with the laser spot technique is far exceeded by scanning tunneling microscopy where, in some cases, atomic resolution in electrochemical cases has been reached (Szklarczyk and Velev, 1989). The first successful studies of semiconductors in air (Fig. 10.31) and in an electrochemical situation (Fig. 10.32) were made onp-Si 111 (Gonzalez-Martin, 1990). It was found that the electrochemical formation of SiOx and SiOH induces surface states at 0.25 V above the valence band at the surface (Fig. 10.33). 

N. D. Jager and E. R. Weber, Scanning Tunneling Microscopy of Defects in Semiconductors... 

Laiho, R., et al. (1997), Spin-polarized scanning tunnelling microscopy with detection of polarized luminescence emerging from a semiconductor tip,/. Phys. Condens. Matter, 9, 5697-5707. 

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