Rf-sputtered films

Logan, J.S., Control of RF sputtered film properties through substrate... 

The same happens with rf-sputtered films when the negative substrate bias is increased [289]. 

Potter et al. (1976) have measured the bubble velocity as a function of drive field for bubbles in rf sputtered films. They have shown that magnetic annealing lowers the coercivity. They have measured the wall mobility and dynamic coercive force and presented the first conclusive data on the existence of gyrotropic deflection in an amorphous material. Minkiewicz et al. (1976) have shown that for samples prepared by rf sputtering, Cu dilutes the transition metal sublattices much differently than Mo. But overall the static coercivity in as-deposited films is larger than one would desire for device applications, and it is lowered by annealing treatments (Potter et al., 1976). 

Phtovoltaic cells were fabricated from the higher T films by depositing CdS from a resistance heated evaporator over the rf-sputtered films. The best a device having an area of 0.2 cm ... 

Fig. 13.7 (a) Discharge profiles of Li//Mo03 cells fabricated with rf-sputtered films deposited onto Si wafer in different oxygen ambient, (b) x-dependence of the chemical diffusion coefficient and enhancement factor in Li cMoOs films... 

Other interesting thin-film studies using AES have included the growth of platinum on Ti02- and SrO-terminated (100) SrTiOs single-crystal substrates [2.154], of epitaxial niobium films on (110) T1O2 [2.155], the interaction of copper with a (0001) rhenium surface [2.156], and the characterization of radio-frequency (rf) sputtered TiN films on stainless steel [2.157]. 

When LiMn204 electrodes are deposited as thin films on a platinum substrate, either by electron-beam evaporation or radiofrequency (rf) sputtering, structures are sometimes formed that exhibit unusual electrochemical behavior [146, 147]. Such electrodes have been evaluated in solid-... 

Figure 16 (Street et al., 1986) shows the typical sample structure, consisting of three layers of a-Si H. Results using this technique have been reported for samples grown by the rf glow discharge of silane and by rf sputtering (Shinar et al., 1989). The first layer is hydrogenated amorphous silicon, deposited under conditions that yield high quality films (i.e., deposition temperature of 230°C, low growth rate) and is typically two microns thick. Next a layer of approximately 1000 A is deposited, whereby...

Figure 4.9. Log(/D)-VGS (VDS = 20V) and (inset) /D Vds characteristics for an RF-sputtered ZnO TFT on a spin-coated A1PO dielectric annealed at 300 °C. VGS is stepped from 0 to 40V in 5-V increments for the ID-VDS curves device W/L = 5 L = 100 pm. [Reproduced with permission. Meyers, S. T. Anderson, J. T. Hong, D. Hung, C. M. Wager, J. F. Keszler, D. A. 2007. Solution processed aluminum oxide phosphate thin-film dielectrics. Chem. Mater. 19 4023-4029. Copyright 2007 American Chemical Society.]...

Figure 4.10. Representative og(IB)-VGS behavior of an RF-sputtered ZTO-channel TFT on (a) 40-nm A1PO and (b) 100-nm Si02 gate dielectrics on unpatterned p++ Si gate electrodes. Channel and A1 S/D contacts were defined with shadow masks. Dielectric films were annealed at 600 °C prior to channel deposition, whereas the completed stack was annealed at 300 °C. 

Ni-YSZ cermets deposited by RF sputtering (230 nm) were found to have micro-structural features consisting of columnar grains 13 to 75 nm long and 9 to 22 nm wide, and showed good adhesion to the YSZ layer on which they were deposited [128], In a three-layer Ni-YSZ-Ni film deposited on NiO by RF sputtering in another study, the YSZ layer exhibited a columnar structure with some pinholes [129], Microstructural and electrochemical features of Pt electrodes patterned by lithography on YSZ have also been studied [130,131]. 

M. Stankova, X. Vilanova, E. Llobet, J. Calderer, C. Bittencourt, J. J. Pireaux, and X. Correig, Influence of the annealing and operating temperatures on the gas-sensing properties of rf sputtered WO3 thin-film sensors. Sensors Actuators 105(2), 271—277 (2005). 

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