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Photolithographic process

The membranes of the microhotplates were released by anisotropic, wet-chemical etching in KOH. In order to fabricate defined Si-islands that serve as heat spreaders of the microhotplate, an electrochemical etch stop (ECE) technique using a 4-electrode configuration was applied [109]. ECE on fully processed CMOS wafers requires, that aU reticles on the wafers are electrically interconnected to provide distributed biasing to the n-well regions and the substrate from two contact pads [1 lOj. The formation of the contact pads and the reticle interconnection requires a special photolithographic process flow in the CMOS process, but no additional non-standard processes. [Pg.34]

Scheme 2 Photolithographic process for preparing patterned hyperbranched grafts of poly(acrylic acid)... Scheme 2 Photolithographic process for preparing patterned hyperbranched grafts of poly(acrylic acid)...
Methods have been developed for fabrication of the highly-ordered titania nanotuhe arrays from titanium thin films atop a substrate compatible with photolithographic processing, notably silicon or FTO coated glass [104]. The resulting transparent nanotuhe array structure, illustrated in Fig. 5.16, is promising for applications such as anti-reflection coatings and dye sensitized solar cells (DSSCs). Fig. 5.17 shows the typical anodization behavior of a 400 nm Ti thin film anodized at 10 V in an HE based electrolyte. Eor a fixed HE concentration, the dimensions of the tube vary with respect to... [Pg.287]

It is also possible to digitally record or compute the data required for a diffracting structure and then uses this data to produce relief holograms, usually via a photolithographic process. [Pg.331]

In the photolithographic process, the geometrical pattern that produces the desired electrical behavior is transferred to the surface of the wafer. [Pg.145]

Figure 11.4 Schematic representation of the photolithographic process sequence, for both positive and negative photoresists. [Adapted from Ref. 70.]... Figure 11.4 Schematic representation of the photolithographic process sequence, for both positive and negative photoresists. [Adapted from Ref. 70.]...
In recent years there has been a considerable amount of research on transition metal complexes due to the large number of potential or already realized technical applications such as solar energy conversion through photo-redox processes, optical information and storage systems, photolithographic processes, etc. Moreover, metal complexes are also of considerable importance in biology and medicine. Most of these applications are directly related to the electronic and vibronic properties of the ground and lowest excited states. [Pg.217]

Figure 1. Typical photolithographic processing steps necessary to pattern SiOt layer on a Si substrate. Key A, thermal oxidation B, photoresist deposition C, resist exposure through photomask and D, develop photoresist. Figure 1. Typical photolithographic processing steps necessary to pattern SiOt layer on a Si substrate. Key A, thermal oxidation B, photoresist deposition C, resist exposure through photomask and D, develop photoresist.
The resolution of the photolithographic process determines the maximum achievable density of the array (i. e. the amount of sequence information encoded on the chip). Table 2 shows the relationship between the resolution, in terms of smallest feature size, and the maximum density at which an array can be printed . Application of the photolithographic process using photolabile protecting groups currently provides a spatial resolution that allows arrays to be fabricated with densities on the order of 106 sequences/cm2, which corresponds to an individual feature size of 10 X 10 m. This feature size is near the limit of resolution that can be achieved by this method using standard photolithography equipment. [Pg.122]

All these calculations show that pentacene TFTs are feasible for active-matrix OLED display backplanes. For the Penn State/Kodak practical realization mentioned above, a 48 x 48 pixel bottom-emission display panel was designed on a 64 mm x 64 mm glass substrate. To obtain good yield, a design rule of 10 pm was used for the minimum feature size (line width or separation) for most structures on the test panel. The coarseness of this design rule is not related to the use of organic compounds, but rather to the simplicity of photolithographic processes. [Pg.372]

The Effect of Adsorbed Cationic Surfactant on the Pattern Collapse of Photoresist Lines in Photolithographic Processes... [Pg.82]


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