PECVD plasma-enhanced

PECVD plasma-enhanced chemical vapor deposition... 

In the area of CVD oxide layers the PECVD (plasma-enhanced CVD) offers the deposition of dielectric films at low process temperatures of about 130-300 °C. During the investigations several oxide layers with different ratios of the process gases argon-2% silane and oxygen were tested as gate dielectrics for the OFETs. 

PECVD Plasma enhanced chemical vapour deposition... 

PECVD Plasma Enhanced Chemical Vapor Deposition... 

In RIE the details of thin film structure or doping can usually be neglected, and for instance PECVD (plasma enhanced) nitride and LPCVD (low pressure) nitride are etched at roughly,the same rate, and in silicon etching no doping dependence needs to be accounted for. 

CCVD combustion chemical vapor deposition MOCVD mettil-organic-assisted CVD PECVD plasma-enhanced CVD FACVD flame-assisted CVD AACVD aerosol-assisted CVD ESAVD electrostatic-atomization CVD LPCVD low-pressure CVD APCVD atmospheric-pressure CVD PACVD photo-assisted CVD TACVD thermtil-activated CVD EVD electrochemical vapor deposition RTCVD rapid thermal CVD UHVCVD ultrahigh-vacuum CVD ALE atomic-layer epitaxy PICVD pulsed-injection CVD... 

MEMS Microelectromechanical systems NEMS Nanoelectromechanical systems PECVD Plasma-enhanced chemical vapor... 

The catalytic chemical vapor deposition (CCVD) technique is far more developed and has great potential to be applied industrially. This technique allows for mass production at lower temperatures than the previously described methods and can be adapted for continuous production [69]. This method consists of decomposing a gas or a liquid precursor, which supplies carbon on catalytic particles (Fe, Ni, Co) in a mbe furnace at temperatures between 500 and 1,100 °C (Fig. 5.4). Besides the classic oven, heated by electric heaters, plasma furnaces (PECVD, Plasma-Enhanced Chemical Vapor Deposition) microwaves (nuCTowave, MW-PECVD), or DC (direct current, dc-PECVD) are also used. 

Typical anion chromatograms of two different BPSG-films (A, B) and a standard (C) are illustrated in Fig. 9-88. Separation was carried out on lonPac AS4A with a carbonate/bicarbonate eluant mixture. Chromatogram A was obtained after dissolving an APCVD-film (APCVD Atmospheric Pressure Chemical Vapor Deposition) that exhibited good flow properties in 0.2% HF solution. Chromatogram B results from a PECVD-film (PECVD Plasma Enhanced Chemical Vapor... 

For heat-sensitive substrates or materials, the PECVD (plasma enhanced CVD) is applied. It ignites the plasma above the wafer it can either be inductive (inductively coupled PECVD ICPECVD) or capacitive (capacitance-coupled PECVD). The CVD process is carried out at temperatures between 200 and 500 °C. See Refs [6,10,11] for more details. 

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