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Oscillators thickness

The war itself also drove the development of improved and miniaturised electronic components for creating oscillators and amplifiers and, ultimately, semiconductors, which made practical the electronic systems needed in portable eddy current test instruments. The refinement of those systems continues to the present day and advances continue to be triggered by performance improvements of components and systems. In the same way that today s pocket calculator outperforms the large, hot room full of intercormected thermionic valves that I first saw in the 50 s, so it is with eddy current instrumentation. Today s handheld eddy current inspection instrument is a powerful tool which has the capability needed in a crack detector, corrosion detector, metal sorter, conductivity meter, coating thickness meter and so on. [Pg.273]

Acoustic Wave Sensors. Another emerging physical transduction technique involves the use of acoustic waves to detect the accumulation of species in or on a chemically sensitive film. This technique originated with the use of quartz resonators excited into thickness-shear resonance to monitor vacuum deposition of metals (11). The device is operated in an oscillator configuration. Changes in resonant frequency are simply related to the areal mass density accumulated on the crystal face. These sensors, often referred to as quartz crystal microbalances (QCMs), have been coated with chemically sensitive films to produce gas and vapor detectors (12), and have been operated in solution as Hquid-phase microbalances (13). A dual QCM that has one smooth surface and one textured surface can be used to measure both the density and viscosity of many Hquids in real time (14). [Pg.391]

For water, organic and water-organic metal salts mixtures the dependence of integral and spectral intensities of coherent and non-coherent scattered radiation on the atomic number (Z), density, oscillator layer thickness, chemical composition, and the conditions of the registering of analytical signals (voltage and tube current, tube anode material, crystal-analyzer) was investigated. The dependence obtained was compared to that for the solid probes (metals, alloys, pressed powder probes). [Pg.444]

Figure 3 A calculated reflectivity profile for a perdeuterated polystyrene film with a thickness of SO nm on a silicon substrate. The calculation was for a specimen where the interfaces between the specimen and air and the specimen and the substrate were sharp. This causes the reflectivity on average (shown by the dashed line) to decrease in proportion to k or 9. The separation distance between the minima of the oscillations diractly yields the thickness of the specimen, as shown. Figure 3 A calculated reflectivity profile for a perdeuterated polystyrene film with a thickness of SO nm on a silicon substrate. The calculation was for a specimen where the interfaces between the specimen and air and the specimen and the substrate were sharp. This causes the reflectivity on average (shown by the dashed line) to decrease in proportion to k or 9. The separation distance between the minima of the oscillations diractly yields the thickness of the specimen, as shown.
The spectra from strong oscillators have special features which are different from those from metallic and dielectric substrates. Different structures in tanf and A are observed on a metallic substrate, dependent on the thickness of the film (Fig. 4.65). For very thin films up to approximately 100 nm the Berreman effect is found near the position of n = k and n < 1 with a shift to higher wavenumbers in relation to the oscillator frequency. This effect decreases with increasing thickness (d > approx. 100 nm) and is replaced by excitation of a surface wave at the boundary of the dielectric film and metal. The oscillator frequency (TO mode) can now also be observed. On metallic substrates for thin films (d < approx. 2 pm) only the 2-component of the electric field is relevant. With thin films on a dielectric substrate the oscillator frequency and the Berreman effect are always observed simultaneously, because in these circumstances all three components of the electric field are possible (Fig. 4.66). [Pg.272]

Fig. 4.65. Different spectral features of tanf for a strong model oscillator at 1000 cm" on a metal substrate. The TO mode (1000 cm" ), Berreman effect (1050 cm" ), and excitation ofa surface wave (1090 cm" ) are seen for different 1150 thicknesses - 1, 5, 10, 50,100, 500, and 1000 nm. Fig. 4.65. Different spectral features of tanf for a strong model oscillator at 1000 cm" on a metal substrate. The TO mode (1000 cm" ), Berreman effect (1050 cm" ), and excitation ofa surface wave (1090 cm" ) are seen for different 1150 thicknesses - 1, 5, 10, 50,100, 500, and 1000 nm.
Determination of the optical constants and the thickness is affected by the problem of calculating three results from two ellipsometric values. This problem can be solved by use of the oscillator fit in a suitable wavenumber range or by using the fact that ranges free from absorption always occur in the infrared. In these circumstances the thickness and the refractive index outside the resonances can be determined - by the algorithm of Reinberg [4.317], for example. With this result only two data have to be calculated. [Pg.274]

It is usually possible to investigate very thin films (up to the subnanometer range) by use of infrared wavelengths, which are much greater than the thickness of the film (a factor of 10000) because of the interference optics of the strong oscillator (Berreman effect). [Pg.274]

Band gap engineetring confined hetetrostruciutres. When the thickness of a crystalline film is comparable with the de Broglie wavelength, the conduction and valence bands will break into subbands and as the thickness increases, the Fermi energy of the electrons oscillates. This leads to the so-called quantum size effects, which had been precociously predicted in Russia by Lifshitz and Kosevich (1953). A piece of semiconductor which is very small in one, two or three dimensions - a confined structure - is called a quantum well, quantum wire or quantum dot, respectively, and much fundamental physics research has been devoted to these in the last two decades. However, the world of MSE only became involved when several quantum wells were combined into what is now termed a heterostructure. [Pg.265]

In the study by Hetsroni et al. (2006b) the test module was made from a squareshaped silicon substrate 15 x 15 mm, 530 pm thick, and utilized a Pyrex cover, 500 pm thick, which served as both an insulator and a transparent cover through which flow in the micro-channels could be observed. The Pyrex cover was anod-ically bonded to the silicon chip, in order to seal the channels. In the silicon substrate parallel micro-channels were etched, the cross-section of each channel was an isosceles triangle. The main parameters that affect the explosive boiling oscillations (EBO) in an individual channel of the heat sink such as hydraulic diameter, mass flux, and heat flux were studied. During EBO the pressure drop oscillations were always accompanied by wall temperature oscillations. The period of these oscillations was very short and the oscillation amplitude increased with an increase in heat input. This type of oscillation was found to occur at low vapor quality. [Pg.310]

Surface force apparatus has been applied successfully over the past years for measuring normal surface forces as a function of surface gap or film thickness. The results reveal, for example, that the normal forces acting on confined liquid composed of linear-chain molecules exhibit a periodic oscillation between the attractive and repulsive interactions as one surface continuously approaches to another, which is schematically shown in Fig. 19. The period of the oscillation corresponds precisely to the thickness of a molecular chain, and the oscillation amplitude increases exponentially as the film thickness decreases. This oscillatory solvation force originates from the formation of the layering structure in thin liquid films and the change of the ordered structure with the film thickness. The result provides a convincing example that the SFA can be an effective experimental tool to detect fundamental interactions between the surfaces when the gap decreases to nanometre scale. [Pg.17]

Another remarkable feature of thin film rheology to be discussed here is the quantized" property of molecularly thin films. It has been reported [8,24] that measured normal forces between two mica surfaces across molecularly thin films exhibit oscillations between attraction and repulsion with an amplitude in exponential growth and a periodicity approximately equal to the dimension of the confined molecules. Thus, the normal force is quantized, depending on the thickness of the confined films. The quantized property in normal force results from an ordering structure of the confined liquid, known as the layering, that molecules are packed in thin films layer by layer, as revealed by computer simulations (see Fig. 12 in Section 3.4). The quantized property appears also in friction measurements. Friction forces between smooth mica surfaces separated by three layers of the liquid octamethylcyclotetrasiloxane (OMCTS), for example, were measured as a function of time [24]. Results show that friction increased to higher values in a quantized way when the number of layers falls from n = 3 to n = 2 and then to M = 1. [Pg.84]

If an electric held of the proper frequency is applied across the quartz crystal, the crystal wiU oscillate in a mechanically resonant mode. These condihons correspond to the creation of a standing acoustic shear wave that has a node midpoint between the two faces of the crystal and two antinodes at both faces of the disk. This is depicted schematically in Eig. 21.20b. In an EQCM experiment the crystals are operated at the fundamental resonant frequency that is a function of the thickness of the crystal. A crystal with a thickness of 330pm has a resonant frequency of 5 MHz. Crystals with these characteristics are commercially available. In an EQCM experiment, an alternating electric field of 5 MHz is applied to excite the quartz crystal into... [Pg.488]


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