Metallizations, electronic devices

Clusters are intennediates bridging the properties of the atoms and the bulk. They can be viewed as novel molecules, but different from ordinary molecules, in that they can have various compositions and multiple shapes. Bare clusters are usually quite reactive and unstable against aggregation and have to be studied in vacuum or inert matrices. Interest in clusters comes from a wide range of fields. Clusters are used as models to investigate surface and bulk properties [2]. Since most catalysts are dispersed metal particles [3], isolated clusters provide ideal systems to understand catalytic mechanisms. The versatility of their shapes and compositions make clusters novel molecular systems to extend our concept of chemical bonding, stmcture and dynamics. Stable clusters or passivated clusters can be used as building blocks for new materials or new electronic devices [4] and this aspect has now led to a whole new direction of research into nanoparticles and quantum dots (see chapter C2.17). As the size of electronic devices approaches ever smaller dimensions [5], the new chemical and physical properties of clusters will be relevant to the future of the electronics industry. 

Uses. In spite of unique properties, there are few commercial appUcations for monolithic shapes of borides. They are used for resistance-heated boats (with boron nitride), for aluminum evaporation, and for sliding electrical contacts. There are a number of potential uses ia the control and handling of molten metals and slags where corrosion and erosion resistance are important. Titanium diboride and zirconium diboride are potential cathodes for the aluminum Hall cells (see Aluminum and aluminum alloys). Lanthanum hexaboride and cerium hexaboride are particularly useful as cathodes ia electronic devices because of their high thermal emissivities, low work functions, and resistance to poisoning. 

The STEM is unrivaled in its ability to obtain high-resolution imaging combined with microanalysis from specimens that can be fashioned from almost any solid. Major applications include the analysis of metals, ceramics, electronic devices... 

Element mapping with non-resonant laser- SNM S can be used to investigate the structure of electronic devices and to locate defects and microcontaminants [3.114]. Typical SNMS maps for a GaAs test pattern are shown in Fig. 3.43. In the subscript of each map the maximum number of counts obtained in one pixel is given. The images were acquired by use of a 25-keV Ga" liquid metal ion source with a spot size of approximately 150-200 nm. For the given images only 1.5 % of a monolayer was consumed -"static SNMS". 

Applied Sciences, Inc. has, in the past few years, used the fixed catalyst fiber to fabricate and analyze VGCF-reinforced composites which could be candidate materials for thermal management substrates in high density, high power electronic devices and space power system radiator fins and high performance applications such as plasma facing components in experimental nuclear fusion reactors. These composites include carbon/carbon (CC) composites, polymer matrix composites, and metal matrix composites (MMC). Measurements have been made of thermal conductivity, coefficient of thermal expansion (CTE), tensile strength, and tensile modulus. Representative results are described below. 

Studies on the electronic structure of carbon nanotube (CNT) is of much importance toward its efficient utilisation in electronic devices. It is well known that the early prediction of its peculiar electronic structure [1-3] right after the lijima s observation of multi-walled CNT (MWCNT) [4] seems to have actually triggered the subsequent and explosive series of experimental researches of CNT. In that prediction, alternative appearance of metallic and semiconductive nature in CNT depending on the combination of diameter and pitch or, more specifically, chiral vector of CNT expressed by two kinds of non-negative integers (a, b) as described later (see Fig. 1). 

Contacts are the elementary building blocks for all electronic devices. These include interfaces between semiconductors of different doping type (homojunctions) or of different composition (heterojunctions), and junctions between a metal and a semiconductor, which can be either rectifying (Schotlky junction) or ohmic. Because of their primary importance, the physics of semiconductor junctions is largely dealt with in numerous textbooks [11, 12]. We shall concentrate here on basic aspects of the metal-semiconductor (MS) and, above all, metal-insulator-semiconductor (MIS) junctions, which arc involved in the oiganic field-effect transistors. 

Conventional electronic devices are made on silicon wafers. The fabrication of a silicon MISFET starts with the diffusion (or implantation) of the source and drain, followed by the growing of the insulating layer, usually thermally grown silicon oxide, and ends with the deposition of the metal electrodes. In TFTs, the semiconductor is not a bulk material, but a thin film, so that the device presents an inverted architecture. It is built on an appropriate substrate and the deposition of the semiconductor constitutes the last step of the process. TFT structures can be divided into two families (Fig. 14-12). In coplanar devices, all layers are on the same side of the semiconductor. Conversely, in staggered structures gate and source-drain stand on opposing sides of the semiconductor layer. 

Most design books continually report that plastics cannot take the heat of metal (steel, etc.) indicating that plastics cannot take heat. As reviewed, by far practically most plastic products do not have to take any more heat then the human body. Practically all plastics easily meet this heat requirement for these type products and in fact many types of these plastics meet the higher heat requirements of plastic products that exist under the engine hood of an automobile, in the trunk of an automobile (excellent user-environmental test), electrical/electronic devices, etc. 

Awaya, N., et al., Evaluation of a Copper Metallization Process and the Electrical Characteristics of Copper-Interconnected Quarter-Micron CMOS, IEEE Transactions of Electron Devices, 43(8) 1206-12 (August 1996)... 

The influence of metal species like copper has been investigated on the product pattern and yield of PBDD/F (Fig. 7) (ref. 11). This study is relevant to accidental fires of polymeric materials of electronic devices which are associated with various metals like copper. As a result of the presence of the metal species substantial amounts of both PBDF and PBDD are formed. 

Cu and Ag on Si(lll) surfaces. In the last example, we come back to surfaces. It is well known (44-46) that Cu catalyzes the formation of dimethyl-dichlorosilane from methylchloride and solid silicon, which is a crucial technological step in the synthesis of silicone polymers. Even today, the details of the catalytic mechanism are unclear. Cu appears to have unique properties for example, the congener Ag shows no catalytic activity. Thus, the investigation of the differences between Cu and Ag on Si surfaces can help in understanding the catalytic process. Furthermore, the bonding of noble metal atoms to Si surfaces is of great importance in the physics and chemistry of electronic devices. 

Many other opportunities exist due to the enormous flexibility of the preparative method, and the ability to incorporate many different species. Very recently, a great deal of work has been published concerning methods of producing these materials with specific physical forms, such as spheres, discs and fibres. Such possibilities will pave the way to new application areas such as molecular wires, where the silica fibre acts as an insulator, and the inside of the pore is filled with a metal or indeed a conducting polymer, such that nanoscale wires and electronic devices can be fabricated. Initial work on the production of highly porous electrodes has already been successfully carried out, and the extension to uni-directional bundles of wires will no doubt soon follow. 

Among these one of the most promising concepts is the development of single electron (SE) devices, which retain their scalability down to the molecular level. At present, due to exploitation of charging (Coulomb) effects in metallic SE devices comprising tunnel junctions with submicrometer size, individual charge carriers can be handled... 

A lead-acid storage battery is only one type of battery, however. Different batteries use different metals and electrolytes to make them work. For example, alkaline batteries (the ones found in flashlights, toys, and portable electronic devices) contain powdered zinc and manganese dioxide as their electrodes. They use an electrolyte made of an alkaline solution of potassium hydroxide. Most alkaline batteries have a finite amount of chemicals in them. Once the chemicals react with one another, they are used up, and the battery goes dead (is discharged) and cannot be recharged. 

Environmental hazards of batteries can be briefly summarized as follows. A battery is an electrochemical device with the ability to convert chemical energy to electrical energy to provide power to electronic devices. Batteries may contain lead, cadmium, mercury, copper, zinc, lead, manganese, nickel, and lithium, which can be hazardous when incorrectly disposed. Batteries may produce the following potential problems or hazards (a) they pollute the lakes and streams as the metals... 

Recently a novel experimental approach using Schottky diodes with ultra-thin metal films (see Fig. 11) makes direct measurement of reaction-induced hot electrons and holes possible. See for example Refs. 64 and 65. The chemical reaction creates hot charge carriers which travel ballistically from the metal film towards the Schottky interface and are detected as a chemicurrent in the diode. By now, such currents have been observed during adsorption of atomic hydrogen and deuterium on Ag, Cu and Fe surfaces as well as chemisorption of atomic and molecular oxygen, of NO and N02 molecules and of certain hydrocarbons on Ag. Similar results have been found with metal-insulator-metal (MIM) devices, which also show chemi-currents for many exothermic surface reactions.64-68... 

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