Silicon solid

Venkatesan, M., and Beinglass, I., Single-Wafer Deposition of Polycrystalline Silicon, Solid State Technology, pp. 49-53 (March 1993)... 

Figure 4. Formation condition for porous silicon solid line - peak current density, dotted line - current density at the maximum slope (see Figure.2).18...

Uses. In metallurgy for hardening copper and lead alloys to prepare GaAs for electronic devices, doping agent in germanium and silicon solid state products, special solders. 

Remarkable efforts have been directed to photocatalytic fuel production from sunshine and water for creating energy resources, and now UV light cleavage of water for fuel production is possible. However, conversion of solar visible light to fuels is still under way, and further concentrated researches in this direction are strongly desired. Conversion of solar energy into electricity has been attained by a sensitized TiOz thin layer solar cell to reach nearly 10% efficiency, comparable to that obtained by the amorphous silicone solid cell. This is an important achievement in photocataiysis. 

FIGURE 9.8 Temperature profile of the PCR chamber (center) fabricated on different substrates silicon (solid line), glass (broken line), PDMS with bottom heating (dotted line), and PDMS with both top and bottom heating (chain line). Top inset shows the temperature profile in the expanded scale (90-94°C) [1000]. Reprinted with permission from Institute of Physics Publishing. 

Many studies on the direct reaction of methyl chloride with silicon-copper contact mass and other metal promoters added to the silicon-copper contact mass have focused on the reaction mechanisms.7,8 The reaction rate and the selectivity for dimethyldichlorosilane in this direct synthesis are influenced by metal additives, known as promoters, in low concentration. Aluminum, antimony, arsenic, bismuth, mercury, phosphorus, phosphine compounds34 and their metal complexes,35,36 Zinc,37 39 tin38-40 etc. are known to have beneficial effects as promoters for dimethyldichlorosilane formation.7,8 Promoters are not themselves good catalysts for the direct reaction at temperatures < 350 °C,6,8 but require the presence of copper to be effective. When zinc metal or zinc compounds (0.03-0.75 wt%) were added to silicon-copper contact mass, the reaction rate was potentiated and the selectivity of dimethyldichlorosilane was enhanced further.34 These materials are described as structural promoters because they alter the surface enrichment of silicon, increase the electron density of the surface of the catalyst modify the crystal structure of the copper-silicon solid phase, and affect the absorption of methyl chloride on the catalyst surface and the activation energy for the formation of dimethyldichlorosilane.38,39 Cadmium is also a structural promoter for this reaction, but cadmium presents serious toxicity problems in industrial use on a large scale.41,42 Other metals such as arsenic, mercury, etc. are also restricted because of such toxicity problems. In the direct reaction of methyl chloride, tin in... 

Mendel E. Polishing of silicon. Solid State Technol 1967 10 27-39. 

The bath should be prepared to obtain a pick up in the range of 1.0 to 1.5% silicone solids based on the dry weight of the fabric. CNC ARIDRY SN contains 20% solids. A 5 to 7% solution of CNC ARIDRY SN will usually be satisfactory. 

DOW CORNING 1111 Emulsion when used as a system, can be applied with conventional textile padding equipment. For best results, the pad bath should give a pickup of about 0.5 to 1.0 percent silicone solids, based on the dry weight of the fabric. For hand modification only, less pickup is required. 

Richter H, Wang ZP, Ley L (1981) The one phonon Raman spectrum in microcrystalline silicon. Solid State Commun 39 625-629... 

To obtain this composition, a metallic solvent is contacted with a silicon source at this temperature Ta during few hours. This leads to the saturation of the solvent in Si, at Xa concentration. Then, the silicon source is removed. If this liquid is brought into contact with a silicon substrate at this temperature, the equilibrium is not changed. However, when the solution is cooled down to Tb, the system presents two phases silicon solid phase appears and the new concentration of the liquid phase in Si becomes Xc. If the cooling process is slow (few Kelvin per minute or less), parasite germination rate within the solvent is close to zero and epitaxial deposition of silicon occurs only on the substrate. 

Silicon Solid-state Chemistry.—Contrary to the pattern adopted in previous volumes, the chemistry of aluminosilicates and zeolites will not be discussed here the data published during the period of this Report associated with these materials are considered in detail in Chapter 3. In this section, silicon dioxide and the silicates will be described separately emphasis will be laid on the inorganic chemistry of these compounds, and papers describing solely their catalytic, adsorption, diffusion, and other similar properties will not be considered. 

Silicone solid rubber, /32" thick, 12"x 36 , 30A durometer, McMaster-Carr, part 8622K31... 

Fig. 7.8. Comparison of the calculated spectral dependence of the photoionization absorption for group-III acceptors in silicon (solid and dashed curves) with experiment (open circles). E is the ionization energy of the acceptor. The widths of the solid lines correspond to the use of different basic assumptions in the calculation (after [52]). The solid and dashed curves for boron correspond to different values of a mass parameter. The experimental results for B, AZ, and Ga are from [27], and those for In from [116]. Copyright 1977 by the American Physical Society...

Fig. 8.29. Comparison of the observed magnetic field dependence of the interaction between the 2p+i component and the 3po transition of P in silicon (solid triangles) with the calculated one for B // [111] (after [108]). In Fig. 4 of the original publication, the wave number scale is shifted downward by 10cm-1...

A. Bhattacharyya and B. G. Streetman, Theoretical Considerations Regarding Pulsed C02 Laser Annealing of Silicon, Solid State Comm., 36, pp. 671-675,1980. 

Figure 2. The phase boundary velocity vs. time for germanium (dashed line) and silicon (solid line). Wo = 0.5 MW/cm2.

S. R. Dhariwal and V. N. Ojha, Band gap narrowing in heavily doped silicon, Solid State Electron. 25 (1982) 909-911. 

Silicon Solid-state Chemistry. Following the pattern set in the previous volume, this aspect of silicon chemistry will be subdivided into four sections in which the literature published on silicon dioxide, silicates, aluminosilicates, and zeolites is described separately. In all four sections, emphasis will be laid on the inorganic chemistry of these materials, and papers describing solely their... 

Chem. Descrip. Silicone defoamer emulsion Uses Defoamer, antifoam for pulp/paper, texies, paints, effluent treatment, commercial cleaning processes, adhesives, metalworking Features Can be used to prepare dilutions contg. as little as 2% silicone solids... 

Laboratory (MBE) 14-17). The resultant delta-doped back-illuminated CCD can detect particles with a low-energy threshold improvement of at least an order of magnitude for protons to below 1 keV, and for electrons down to 100 eV. Extension of delta doping to lu resisitivity detectors has also been demonstrated more recently. Furdier work in diis area is mutorway. Widi delta-doped detectors, we have demonstrated the reduction of die deadlayer in silicon solid-state detectors to 1 nnL The low-energy detection threshold, high efficiency, and the stability of performance of these detectors make them ideal candidates for future spacecraft skin sensors. 

AnastassaJds, E., Knczuk, A., Burstein, E., PoUack, RH., Cardona, M. Effect of static uniaxial stress on the Raman spectrum of silicon. Solid State Commun. 8, 133-138 (1970)... 

FIGURE 1.238 Diffusivities of n-heptane in Vyeor porous glass (open symbols) and in porous silicon (solid symbols) as a function of surface coverage measured at different temperatures. (Adapted from Micropor. Mesopor. Mater., 125, Dvoyashkin, M., Khokhlov, A., Naumov, S., and Valiullin, R., Pulsed field gradient NMR study of surface diffusion in mesoporous adsorbents, 58-62, 2009. Copyright 2009, with permission from Elsevier.)... 

Borghesi A, Guizzetti G, Sassella A et al (1994) Induction-model analysis of Si-H stretching mode in porous silicon. Solid State Commun 89 615-618... 

Choi S-H, Chung H, Shin G-S (1995) Conditions of luminescence degradation or enhancement in porous silicon. Solid State Commun 95(6) 341-345... 

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