Capacitance modulation

Physical Chemistry of Sohd-Gas Interfaces 6.4A.2. Capacitance modulation... 

The metal-oxide-semiconductor field-effect transistor (MOSFET) is a transistor that uses a control electrode, the gate, to capacitively modulate the conductance of a surface channel joining two end contacts, the source and the drain. The gate is separated from the semiconductor body underlying the gate by a thin gate insulator, usually silicon dioxide. The surface channel is formed at the interface between the semiconductor body and the gate insulator, see Fig. 7.25. 

Gate The control electrode of a MOSFET. The voltage on the gate capacitively modulates the resistance of the connecting channel between the source and drain. 

FIGURE 8 (A) Inductively coupled transducer (B) parametric transducer using capacitive modulation. 

A substrate is a robust element that provides mechanical support for the die. It can be mounted with more than one die such packages are called multichip modules. Because parasitic capacitance effects are directiy proportional to the dielectric constant, substrate material should have a low dielectric constant. 

Asif, S.A.S., Wahl, K.J. and Colton, R.J., Nanoindentation and contact stiffness measurement using force modulation with a capacitive load-displacement transducer. Rev. Sci. Instrum., 70, 2408-2413 (1999). 

Capacitance Probe 2.2.5 Computational Modules- 3.5.3.3 Valves-Operated-Pneumatic... 

The combination of photocurrent measurements with photoinduced microwave conductivity measurements yields, as we have seen [Eqs. (11), (12), and (13)], the interfacial rate constants for minority carrier reactions (kn sr) as well as the surface concentration of photoinduced minority carriers (Aps) (and a series of solid-state parameters of the electrode material). Since light intensity modulation spectroscopy measurements give information on kinetic constants of electrode processes, a combination of this technique with light intensity-modulated microwave measurements should lead to information on kinetic mechanisms, especially very fast ones, which would not be accessible with conventional electrochemical techniques owing to RC restraints. Also, more specific kinetic information may become accessible for example, a distinction between different recombination processes. Potential-modulation MC techniques may, in parallel with potential-modulation electrochemical impedance measurements, provide more detailed information relevant for the interpretation and measurement of interfacial capacitance (see later discus-... 

An interesting special application has been proposed by Schlichthorl and Peter.31,41 It aims at deconvolution of electrochemical impedance data to separate space charge and surface capacitance contributions. The method relies on detection of the conductivity change in the semiconductor associated with the depletion of majority carriers in the space charge region via potential-modulated microwave reflectivity measurements. The electrode samples were n-Si(lll) in contact with fluoride solution. 

Nonfaradaic components associated with the uncompensated resistance between reference electrodes (7 ) and the double layer capacitance (Qi) can be accurately determined by AC impedance measurements. In this technique, a small AC potential perturbation is superimposed to the DC bias, and the resulting AC current is measured as a function of the frequency of modulation. The simplest circuit considered for a polarizable... 

A constant bias potential is applied across the sensor in order to form a depletion layer at the insulator-semiconductor interface. The depth and capacitance of the depletion layer changes with the surface potential, which is a function of the ion concentration in the electrolytic solution. The variation of the capacitance is read out when the semiconductor substrate is illuminated with a modulated light and the generated photocurrent is measured by means of an external circuit. 

Thus, the expression for the total capacitance of the bare EIS structure, C(space-charge capacitance by means of the electrolyte solution-insulator interface potential (cp) (the capacitances C([Pg.216]

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