Metal-oxide Semiconductor Transistor Switch Matrix Address

Electron mobility of 320 cm V s is obtained, and the ON-OFF current ratio is about 10.  

An XeCl excimer laser crystallization method is also very effective for field effect mobility enhancement of TFTs. 

5 Metal-oxide Semiconductor Transistor Switch Matrix Address 

For driving matrix liquid crystal display panels, the silicon metal-oxide semiconductor field effect transistor (MOSFET) fabricated on a silicon monolithic wafer has been investigated by several groups [134-150]. The MOS transistor circuit fabrication techniques are well developed and have been used to produce various LSI devices. A dynamic scattering mode, a planar type GH mode or a polymer dispersed (PD) mode are used in these displays because the silicon wafer is intrinsically opaque. The circuit configuration of the panel is essentially the same as that of the p-Si TFT switch matrix addressed liquid crystal display panel as shown its equivalent circuit in Fig. 18(a). 

The physical arrangement of a prototype matrix liquid crystal display panel is shown in Fig. 18 (b). Within the square area formed 

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Figure 18. Metal-oxide semiconductor transistor switch matrix addressed liquid crystal display panel and its equivalent circuit.

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