Interface band pinning

Parker [55] studied the IN properties of MEH-PPV sandwiched between various low-and high work-function materials. He proposed a model for such photodiodes, where the charge carriers are transported in a rigid band model. Electrons and holes can tunnel into or leave the polymer when the applied field tilts the polymer bands so that the tunnel barriers can be overcome. It must be noted that a rigid band model is only appropriate for very low intrinsic carrier concentrations in MEH-PPV. Capacitance-voltage measurements for these devices indicated an upper limit for the dark carrier concentration of 1014 cm"3. Further measurements of the built in fields of MEH-PPV sandwiched between metal electrodes are in agreement with the results found by Parker. Electro absorption measurements [56, 57] showed that various metals did not introduce interface states in the single-particle gap of the polymer that pins the Schottky contact. Of course this does not imply that the metal and the polymer do not interact [58, 59] but these interactions do not pin the Schottky barrier. 

The Schottky-Mott theory predicts a current / = (4 7t e m kB2/h3) T2 exp (—e A/kB 7) exp (e n V/kB T)— 1], where e is the electronic charge, m is the effective mass of the carrier, kB is Boltzmann s constant, T is the absolute temperature, n is a filling factor, A is the Schottky barrier height (see Fig. 1), and V is the applied voltage [31]. In Schottky-Mott theory, A should be the difference between the Fermi level of the metal and the conduction band minimum (for an n-type semiconductor-to-metal interface) or the valence band maximum (for a p-type semiconductor-metal interface) [32, 33]. Certain experimentally observed variations of A were for decades ascribed to pinning of states, but can now be attributed to local inhomogeneities of the interface, so the Schottky-Mott theory is secure. The opposite of a Schottky barrier is an ohmic contact, where there is only an added electrical resistance at the junction, typically between two metals. 

Fig. S-41. Band edge levels and Fermi level of semiconductor electrode (A) band edge level pinning, (a) flat band electrode, (b) under cathodic polarization, (c) under anodic polarization (B) Fermi level pinning, (d) initial electrode, (e) under cathodic polarization, (f) imder anodic polarization, ep = Fermi level = conduction band edge level at an interface Ev = valence band edge level at an interface e = surface state level = potential across a compact layer.

In the state of Fermi level pinning, the Fermi level at the interface is at the surface state level both where the level density is high and where the electron level is in the state of degeneracy similar to an allowed band level for electrons in metals. The Fermi level pinning is thus regarded as quasi-metallization of the interface of semiconductor electrodes, making semiconductor electrodes behave like metal electrodes at which all the change of electrode potential occurs in the compact layer. 

Figure 5-45 shows the differential capacity for an intrinsic semiconductor electrode of germanium estimated by calculation as a function of electrode potential. Here, the capacity is minimum at the flat band potential, Ea, where is zero. As the electrode potential shifts so far away from that the Fermi level at the interface may be dose to the band edge levels, Fermi level pinning is reaUzed both with A sc remaining constant and with Csc being constant and independent of the electrode potential. 

As the potential Ai )sc of an inversion layer increases and as the Fermi level at the electrode interface coincides with the band edge level, the electrode interface is in the state of degeneracy (Fermi level pinning) and both the capacity Csc and the potential A4>sc are maintained constant. Figure 5-48 shows schematically the capacity of a space charge layer as a function of electrode potential. As the electrode potential shifts in the anodic (positive) direction from a cathodic (negative) potential, an accumulation, a depletion, and an inversion layer are successively formed here, the capacity of the space charge layer first decreases to a minimum and then increases to a steady value. 

In the state of band edge level pinning, the electron level of redox particles with the state density of DredoxCe), relative to the electron level rf semiconductor with the state density of Dsc(e), remains unchanged at the electrode interface irrespective of electrode potential. On the other hand, in the state of Fermi level pinning, the electron level of redox particles relative to the electron level of semiconductor electrode depends on the electrode potential in the same way as occurs with metal electrodes (quasi-metallization of semiconductor electrodes). 

In the state of band edge level pinning, the band edge levels, Sc and Cy, at the interface of electrodes remain unchanged and independent of the electrode potential. Figure 8-18 shows both the band edge level of several semiconductor... 

Next, we consider the anodic reaction current of redox electron transfer via the conduction band, of which the exchange reaction current has been shown in Fig. 8-16. Application of a slight anodic polarization to the electrode lowers the Fermi level of electrode fix>m the equilibrium level (Ep(sc)( n = 0) = eiiOTSDca)) to a polarized level (ep(8C)( n) = ep(REDox)- n)withoutchanging at the electrode interface the electron level relative to the redox electron level (the band edge level pinning) as shown in Fig. 8-20. As a result of anodic polarization, the concentration of interfacial electrons, n, in the conduction band decreases, and the concentration of interfadal holes, Pm, in the valence band increases. Thus, the cathodic transfer current of redox electrons, in, via the conduction band decreases (with the anodic electron im ection current, ii, being constant), and the anodic transfer current of redox holes, (p, via the valence band increases (with the cathodic hole injection... 

For p-type electrodes, the cathodic current is carried at low overvoltages by the minority carriers (electrons) in the conduction band and is controlled at high overvoltages by the limiting current of electron diffusion the anodic current is carried by the mtqority carriers (holes) in the valence band and the concentration of interfacial holes increases with increasing anodic overvoltage until the Fermi level is pinned in the valence band at the electrode interface, where the anodic current finally becomes an electron injection current into the electrode. 

Generally, the band edge level pinning arises at low overvoltages at which the Fermi level at the interface is within the band gap whereas, the Fermi level pinning arises at high overvoltages at which the Fermi level at the interface is in the valence band (Refer to Sec. 5.7.). 

Note that the potential across the compact layer can not be changed by changing the electrode potential unless the electrode interface is in the state of Fermi level pinning. In the state of band edge level pinning hi >H remains independent of the electrode potential Ma depends on the concentration of potential determining ions in aqueous solution though. 

In the state of band edge level pinning where all the change in electrode potential occurs in the space diarge layer, Mec, the anodic polarization curve of the oxidative dissolution follows Eqn. 9-53. As anodic polarization increases, the electrode interface enters a state of Fermi level pinning, in which all the change in electrode potential occurs in the compact layer, A ir, and the concentration of surface cations in Eqns. 9-54 then decreases with increasrng anodic polarization. 

Fig. 9-16. Polarization curves of anodic oxidative dissolution and cathodic reductive dissolution of semiconductor electrodes of an ionic compound MX iiixcp) (iMxh )== anodic oxidative (cathodic reductive) dissolution current solid curve = band edge level pinning at the electrode interface, dashed curve = Fermi level pinning.

We consider dehydration-adsorption of hydrated protons (cathodic proton transfer) and desorption-hydration of adsorbed protons (anodic proton transfer) on the interface of semiconductor electrodes. Since these adsorption and desorption of protons are ion transfer processes across the compact layer at the interface of semiconductor electrodes, the adsorption-desorption equilibrium is expressed as a function of the potential of the compact layer in the same way as Eqns. 9-60 and 9-61. In contrast to metal electrodes where changes with the electrode potential, semiconductor electrodes in the state of band edge level pinning maintain the potential d(hi of the compact layer constant and independent of the electrode potential. The concentration of adsorbed protons, Ch , is then determined not by the electrode potential but by the concentration of h3 ated protons in aqueous solutions. 

In the active state, the dissolution of metals proceeds through the anodic transfer of metal ions across the compact electric double layer at the interface between the bare metal and the aqueous solution. In the passive state, the formation of a thin passive oxide film causes the interfadal structure to change from a simple metal/solution interface to a three-phase structure composed of the metal/fUm interface, a thin film layer, and the film/solution interface [Sato, 1976, 1990]. The rate of metal dissolution in the passive state, then, is controlled by the transfer rate of metal ions across the film/solution interface (the dissolution rate of a passive semiconductor oxide film) this rate is a function of the potential across the film/solution interface. Since the potential across the film/solution interface is constant in the stationary state of the passive oxide film (in the state of band edge level pinning), the rate of the film dissolution is independent of the electrode potential in the range of potential of the passive state. In the transpassive state, however, the potential across the film/solution interface becomes dependent on the electrode potential (in the state of Fermi level pinning), and the dissolution of the thin transpassive film depends on the electrode potential as described in Sec. 11.4.2. 

In the range of potential of the passive state the passive oxide film is in the state of band edge level pinning at the film/solution interface hence, the potential A( )h across the film/solution interface remains constant irrespective of the electrode potential of the passive metal. With increasing anodic polarization and in the... 

Fig. 11-11. Potential at a film/solution interface and potential dfp in a passive film as a fimction of anodic potential of a passive metal electrode in the stationary state the interface is in the state of band edge level pinning to the extent that the Fermi level e, is within the band gap, but the interface changes to the state of Fermi level pinning as e, coincides with the valence band edge Cy.

Fig. 5. Energy diagram of a semiconductor-electrolyte interface (a) with no external voltage (b) and (c) under the application of an external voltage. The diagram explains the pinning at the semiconductor electrode surface of the energy band edges [transition from (a) to (b)] or of the Fermi level [transition from (a) to (c)].

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