Band edges

E is tire density of states between E and E + AE. A simpler way of calculating n is to represent all tire electron states in tire CB by an effective density of states at tire energy E (band edge). The electron density is tlien simply n = NJ (Ef. 

Micic O I ef a/1996 Highly efficient band-edge emission from InP quantum dots Appi. Phys. Lett. 68 3150... 

Fig. 1. Band-edge energy diagram where the energy of electrons is higher in the conduction band than in the valence band (a) an undoped semiconductor having a thermally excited carrier (b) n-ty e doped semiconductor having shallow donors and (c) a -type doped semiconductor having shallow acceptors.

Fig. 2. Representation of the band edges in a semiconductor p—n junction where shallow donor, acceptor energies, and the Fermi level are labeled Ejy E, and E respectively, (a) Without external bias is the built-in potential of the p—n junction (b) under an appHed forward voltage F. ...

Fig. 4. Schematic cross section and the band diagram of a double heterostmcture showing the band-edge discontinuities, AE and AE used to confine carriers to the smaller band gap active layer, (a) Without and (b) with forward bias. See text.

Fig. 6. Band edge positions of several semiconductors ia contact with an aqueous electrolyte at pH 1 ia relation to the redox (electrode) potential regions (vs the standard hydrogen electrode) for the oxidation of organic functional groups (26,27).

Cadmium Sulfide Photoconductor. CdS photoconductive films are prepared by both evaporation of bulk CdS and settHng of fine CdS powder from aqueous or organic suspension foUowed by sintering (60,61). The evaporated CdS is deposited to a thickness from 100 to 600 nm on ceramic substates. The evaporated films are polycrystaUine and are heated to 250°C in oxygen at low pressure to increase photosensitivity. Copper or silver may be diffused into the films to lower the resistivity and reduce contact rectification and noise. The copper acceptor energy level is within 0.1 eV of the valence band edge. Sulfide vacancies produce donor levels and cadmium vacancies produce deep acceptor levels. 

In Modulation Spectroscopy, which is mosdy used to characterize semiconductor materials, the peak positions, intensities and widths of features in the absorption spectrum are monitored. The positions, particularly the band edge (which defines the band gap)> are the most useful, allowing determination of alloy concentration. 

Bande,/. edge, border band gang. Bandeisen, n. hoop iron, band iron. Bandenlinie, /. band line. 

It must be noted that the prerequisite to see distinct peaks in a TSC experiment is a sleep onset of the density of stales at the band edges. This is fully fulfilled... 

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