Interfaces pinning

The studied SMN s are hard type II superconductors. So, the vortex lattice is formed while Hq becomes slightly less than H 2 iX). We will focus on the dependence of the vortex lattice nascent process on the R T) curves. At low temperatures, when the degeneracy of Hq is Ayi, a rather stable vortex lattice is formed. The perturbation of the lattice due to feeble bias current is smaller with respect to the interface pinning force. The R T) curve is sharp both for S- and N-type samples. This scenario is relatively trivial. 

PedtTsen, U.R., Hummel, F., Dellago, C. Computing the crystal growth rate by the interface pinning method. J. Chem. Phys. 142, 044104 (2015)... 

Multiple islands arranged on hemisphere. Each island houses a tunable liquid microlens formed by a curved water-to-oU interface pinned at the edge of a polymer aperture by surface tension. The change in the curvature of the interface is caused by stimulus-responsive hydrogel actuators. (Source Adapted from Zhu, D., Zeng, X., Li, C. and Jiang, H. 2011. Journal of Microelectromechanical Systems, 20(2), 389-395. With permission.)... 

FIGURE 55.4 Cutaway drawing of a board resting on top of an in-circuit vacuum-actuated fixture, the bed of nails.The interface pins (the mechanical interface to the ATE pin electronics) are... 

States are created in the schedule based on the control structure, on the data dependencies between the operations, when registers are written, and when interface pins are accessed. A rule-based system is then used to merge states in the control schedule. 

In the absence of either surface states, which may pin the Fermi level at the interface between the dielectric and the electrode, the energy barriers, which in turn... 

Parker [55] studied the IN properties of MEH-PPV sandwiched between various low-and high work-function materials. He proposed a model for such photodiodes, where the charge carriers are transported in a rigid band model. Electrons and holes can tunnel into or leave the polymer when the applied field tilts the polymer bands so that the tunnel barriers can be overcome. It must be noted that a rigid band model is only appropriate for very low intrinsic carrier concentrations in MEH-PPV. Capacitance-voltage measurements for these devices indicated an upper limit for the dark carrier concentration of 1014 cm"3. Further measurements of the built in fields of MEH-PPV sandwiched between metal electrodes are in agreement with the results found by Parker. Electro absorption measurements [56, 57] showed that various metals did not introduce interface states in the single-particle gap of the polymer that pins the Schottky contact. Of course this does not imply that the metal and the polymer do not interact [58, 59] but these interactions do not pin the Schottky barrier. 

The interfaces between a semiconductor and another semiconductor (e.g. the very important pin junction, the interface between p- and ft-type semiconductors), between a semiconductor and a metal (the Schottky barrier) and between a semiconductor and an electrolyte are the subject of solid-state physics, using a nomenclature different from electrochemical terminology. 

The term photovoltaic effect is further used to denote non-electrochemical photoprocesses in solid-state metal/semiconductor interfaces (Schottky barrier contacts) and semiconductor/semiconductor pin) junctions. Analogously, the term photogalvanic effect is used more generally to denote any photoexcitation of the d.c. current in a material (e.g. in solid ferroelectrics). Although confusion is not usual, electrochemical reactions initiated by light absorption in electrolyte solutions should be termed electrochemical photogalvanic effect , and reactions at photoexcited semiconductor electodes electrochemical photovoltaic effect . 

As shown in Fig. 1, chain sliding diffusion becomes difficult due to pinning effect within the interface between a nucleus and the melt. Since Jo is proportional to the topological diffusion constant D, D is related to ve from Eq. 62,... 

The Schottky-Mott theory predicts a current / = (4 7t e m kB2/h3) T2 exp (—e A/kB 7) exp (e n V/kB T)— 1], where e is the electronic charge, m is the effective mass of the carrier, kB is Boltzmann s constant, T is the absolute temperature, n is a filling factor, A is the Schottky barrier height (see Fig. 1), and V is the applied voltage [31]. In Schottky-Mott theory, A should be the difference between the Fermi level of the metal and the conduction band minimum (for an n-type semiconductor-to-metal interface) or the valence band maximum (for a p-type semiconductor-metal interface) [32, 33]. Certain experimentally observed variations of A were for decades ascribed to pinning of states, but can now be attributed to local inhomogeneities of the interface, so the Schottky-Mott theory is secure. The opposite of a Schottky barrier is an ohmic contact, where there is only an added electrical resistance at the junction, typically between two metals. 

The nonpolarizable electrode may also be defined as the electrode at which an electron or ion transfer reaction is essentiaUy in equilibrium i. e. the electron or ion level in the electrode is pinned at the electron level of hydrated redox particles or at the hydrated ion level in aqueous electrolyte. In order for the electrode reaction to be in equilibrium at the interface of nonpolarizable electrode, an appreciable concentration of redox particles or potential determining ions must exist in the electrolyte. 

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