Indium zinc oxide

Doh, J.G. et al.. Enhancement of photocurrent and photovoltage of dye-sensitized solar cells with TiO, film deposited on indium zinc oxide substrate, Chem. Mater., 16,493,2004. 

Hara, H., Hanada, T., Shiro, T., and Yatabe, T. (2004) Properties of indium zinc oxide thin films on heat withstanding plastic substrate. J. Vac. Sci. Technol. A, 22,1726-1729. 

Lim, W, Wang, Y. L., Ren, E, Norton, D. P, Kravchenko, II, Zavada, J. M. and Pearton, S. J. (2007) Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity . Electrochemical and Solid State Letters, 10(9), H267-H269. 

Kang, J.W., Jeong, W.L, Kim, J.J., Kim, H.K., Kim, D.G., Lee, G.H., 2007. High-performance flexible organic light-emitting diodes using amorphous indium zinc oxide anode. Electrochem. Solid State Lett. 10, J75-J78. 

In203 [215], ITO [216], and indium-zinc oxide [217] films have been prepared by DC- and RF-magnetron sputtering. 

Kang HS, Lee JK, Lee JW, Joo J, Ko JM, Kim MS, Lee JY (2005) Humidity dependent characteristics of thin film poly(3,4-ethylenedioxythiophene) field-effect transistor. Synth Met 155 176-179 Kang D, Lim H, Kim C, Song I (2007) Amorphous gallium indium zinc oxide thin film transistors sensitive to oxygen molecules. Appl Phys Lett 90 192101... 

The device assembly was carried out by direct application of a small volume of the di-ureasUs to the surface of a glass plate onto which an indium zinc oxide (IZ0)AV03 coating had been previously deposited. The gel was dried in a vacuum oven for a period of seven days. The thickness used for each layer were 170 nm for IZO and 400 nm for WO3. The entire assembly procedure described was carried out under atmospheric condition. A second IZO-coated glass plate was placed on top of the dry electrolyte layer and the two plates were pressed together to spread the electrolyte in a thin film between the EC surfaces. The entire assembly procedure described was carried out under atmospheric conditions. 

Small additions, e.g. 0-1%, of indium, zinc or phosphorus, reduce the rate of oxidation and an addition of antimony, thallium or bismuth accelerates it... 

Ku, C.-H. Wu, J.-J. 2006. Aqueous solution route to high-aspect-ratio zinc oxide nanostructures on indium tin oxide substrates. J. Phys. Chem. B 110 12981-12985. 

Figure 14.12. SEM images of the ZnO materials formed under various conditions (a, b) at a zinc nitrate/HMTA concentration of 0.005 M (c, d) at a zinc nitrate/HMTA concentration of 0.005 M and (e, f) at a zinc nitrate/HMTA concentration of 0.02M. All are on an indium tin oxide seed layer. The seed layer used for (c, d) was different from the seed layer used for (a, b, e, and f). [Reproduced with permission from Ref. 64. Copyright 2006 American Chemical Society.]64... 

Other materials such as gold (< = 4.9 eV), aluminum (< = 4.2 eV), indium-doped zinc oxide, magnesium indium oxide, nickel tungsten oxide, or other transparent conductive oxide materials, have been studied as anodes in OLEDs. Furthermore, the WF of ITO can be varied by surface treatments such as application of a very thin layer of Au, Pt, Pd, or C, acid or base treatments, self-assembly of active surface molecules, or plasma treatment. 

K.R. Zhang, F.R. Zhu, C.H.A. Huan, A.T.S. Wee, and T. Osipowicz, Indium-doped zinc oxide films prepared by simultaneous rf and dc magnetron sputtering, Surf. Interface Anal., 28 271-274, 1999. 

S. Major and K.L. Chopra, Indium-doped zinc-oxide films as transparent electrodes for solar-cells, Sol. Energy Mater., 17 319-327, 1988. 

Some comments are offered here regarding titanium, copper, zinc, and indium (hydrous) oxides. 

Nanowires and nanobelts of inorganic oxides have been fashioned into chemically sensitive semiconductor devices. These include tin and zinc oxides [9], and indium oxide [30], Once again, ammonia and NO2 gases were used for initial demonstrations. Oxygen had very little effect on the sensing action. Because of the low concentrations detected and the speed of the response, it was suggested that single-molecule response could be within reach with these ultraminiaturized sensors. 

The world s supply of indium comes as a by-product of zinc and lead refining and is produced in China (110 tonnes per year), Japan (70 tonnes), Canada (50 tonnes), Belgium (40 tonnes) France (10 tonnes), and Germany (10 tonnes), with smaller production in a few other countries. The total refined indium production is around 340 tonnes per year, most of which goes into indium tin oxide (70%) and indium semiconductors (15%) with a few other uses, such as low melting alloys in fire-sprinkler systems in... 

The mobility and resistivity data of single crystalline zinc oxide samples (measured at room temperature) from different authors, which were reported from 1957 to 2005, are displayed in Fig. 2.6 as a function of the carrier concentration (part of these data were taken from [67]). Undoped ZnO crystals exhibit carrier concentrations as low as 1015 cm-3, while indium-doped crystals reach carrier concentrations up to 7 x 1019cm-3. The mobility data show a large scattering between carrier concentrations of 1017 to 5 x 1018cm-3. This is caused by the fact that zinc oxide is a compound semiconductor that is not as well developed as other semiconducting compounds. For instance, only... 

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