Indium zinc gallium oxide

Most synthetic camphor (43) is produced from camphene (13) made from a-pinene. The conversion to isobomyl acetate followed by saponification produces isobomeol (42) in good yield. Although chemical oxidations of isobomeol with sulfuric/nitric acid mixtures, chromic acid, and others have been developed, catalytic dehydrogenation methods are more suitable on an industrial scale. A copper chromite catalyst is usually used to dehydrogenate isobomeol to camphor (171). Dehydrogenation has also been performed over catalysts such as zinc, indium, gallium, and thallium (172). 

Zinc (0.02% of the earth s crust) occurs almost entirely as ZnS this has two forms (Fig. 277), the much commoner cubic zinc blende or sphalerite, and the rarer, hexagonal wurtzite (p. 149). Iron and cadmium are nearly always present as substitutional impurities and the ore also serves to concentrate a number of much rarer elements such as indium, gallium and germanium. The sulphide is easily converted to oxide by roasting in air. 

More interesting are the results on the support of indium oxide, gallium oxide, and zinc oxide on In particular, In203/MCM-41... 

Kang HS, Lee JK, Lee JW, Joo J, Ko JM, Kim MS, Lee JY (2005) Humidity dependent characteristics of thin film poly(3,4-ethylenedioxythiophene) field-effect transistor. Synth Met 155 176-179 Kang D, Lim H, Kim C, Song I (2007) Amorphous gallium indium zinc oxide thin film transistors sensitive to oxygen molecules. Appl Phys Lett 90 192101... 

New developments relating to the manufacture of thin film transistors (TFT) are being reported from Japan where the Tokyo Institute of Technology has developed a flexible, transparent device on a PETP substrate. This TFT comprises an amorphous oxide semiconductor, which serves as the active layer, and which is made from indium, gallium and zinc oxide deposited by laser ablation to a thickness of 30-60 nm. The TFT, with its transparent electrodes and circuitry, is manufactured in a vacuum at a temperature of 150 "C or less. Because of this low processing temperature it is possible to use low cost PET film, with a thickness of 200 pm, as a substrate thereby enabling transistors to be manufactured at a relatively low cost. 

Polymers containing 8-hydroxyquinoline appear to be selective adsorbents for tungsten in alkaline brines (95). In the presence of tartrate and citrate, quinaldic acid [93-10-7] allows the separation of zinc from gallium and indium (96). Either of these compounds can selectively separate lead and zinc from oxide ores as complexes (97). It is also possible to separate by extraction micro quantities of rhenium(VII), using quinoline in basic solution (98). The... 

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