Hall effect device

The measurement and evaluation methods of chapter 3.1. and 3.2. work with inductive sensors in an absolute circuit. The results on two different formed coils, a pot core coil and a cylinder core coil are selected. For presentation in this paper the third method, described in chapter 3.3., uses a Hall-effect device to detect the information and a coil system in a differential circuit to excite the electromagnetic field. 

The sensor of the third method is a Hall-effect device situated in a magnetic field of two differential arranged exiting coils. Fig. 3 shows the construction of the sensor probe. 

Due to the symmetrical construction the resulting magnetic field between the two coils is zero in y-direction, if a conductive structure is symmetrically situated in the area a (see fig. 3) in the near of the probe. A resulting field is detectable by the Hall-effect device, if there are unsym-metrics in the structure in area a. The value of the Hall voltage is proportional to the detected magnetic field. 

All measured signals include errors described in chapter 4.2.1.. Especially the data of the Hall-effect device, curve... 

The main use of elemental As is in alloys with Pb and to a lesser extent Cu. Addition of small concentrations of As improves die properties of Pb/Sb for storage batteries (see below ), up to 0.75% improves the hardness and castabilily of type metal, and 0 5-2.0% improves the sphericity of Pb ammunition. Automotive body solder is Pb (92%),, Sb (5 0%), Sn (2.5%) and As (0.5%). Intcrnxitallic compounds with Al, Ga and In give the 111-V semiconductors (p 255) of which GaAs and InAs are of particular value for light-emitting diodes (LEDs), tunnel diodes, infrared emitters, laser windows and Hall-effect devices (p. 258). 

As widi arsenic, semiconductor grade Sb is prepared by chemical reduction of highly purified compounds AlSb, GaSb and InSb have applications in infrared devices, diodes and Hall-effect devices. ZnSb has gootl themioelectric properties. Applications of various conipounjs of Sb will be mentioned when die compounds tbemselves are discussed. 

Uses. Large quantities of Sb metal have been used mainly in alloys with Pb (battery grids) and other metals. Alloys are the predominant use of antimony because its brittleness bars direct use. High purity antimony (>99.999%) has a limited but important application in the manufacture of semiconductor devices. When alloyed with elements of 13th group (IIIA), the III-V compounds are formed these have important applications as infrared devices, diodes and Hall effect devices. Also used for fireworks and thermoelectric piles. 

Antimony alloys have many commercial applications. The metal makes its alloys hard and stiff and imparts resistance to corrosion. Such alloys are used in battery grids and parts, tank linings, pipes and pumps. The lead plates in the lead storage batteries constitute 94% lead and 6% antimony. Babbit metal, an alloy of antimony, tin, and copper is used to make antifriction machine bearings. Alloys made from very high purity grade antimony with indium, gallium and bismuth are used as infrared detectors, diodes, hall effect devices and thermoelectric coolers. 

Indium antimonide is used in semiconductor and Hall effect devices, and infrared detectors. 

Important intermetaUics are the III V semiconductors for infrared detectors AlSb (band gap, 2.2 eV), GaSb (band gap, 0.7 eV), and InSb (band gap, 0.2eV), which can be used as diodes and Hall effect devices. Precursors of these semiconductors are products obtained by reactions of Sb(SiR3)3 and alkyl derivatives of group 13 metals, for example, Lewis acid base adducts R3M Sb(SiR3)3 (M = AI, Ga, In R = alkyl) or heterocycles [R2MSb(SiMe3)2] (n = 2, 3). - ... 

R.S. Popovic, Hall Effect Devices (CRC Press, Boca Raton, 2010)... 

Indium araenide inorgchem InAs Metalliccrystals that melt at 943 C an intermetallic compound having semiconductor properties used in Hall-effect devices. in-dS-3m ars-an,Td ... 

---