Voltage drain

Fig. 12. NMOSFET operated (a) in the linear (low drain voltage) region, where S is the grounded source contact,jy is the distance from source to drain, and dis differential increase and (b) at the onset of the saturation region, V-q = V-q The point Yindicates the channel pinch-off point. For Uq point...

It is seen that for a given (constant) gate voltage, the drain current first increases linearly with the drain voltage (linear regime), then gradually levels off to reach a saturation value (saturation regime). 

FIGURE 6-20 Configuration of a penicillin sensor based on an microarray electrode coated with a pH-responsive polypyrrole. Vq = gate voltage VD = drain voltage ID = drain current PS = potentiostat CE and RE = counter and reference electrodes, respectively. (Reproduced with permission from reference 76.)... 

Figure 11. Drain current, Id, vs. gate voltage, Vg, for various drain voltages, Vq (25, 50, 100 mV) for a poly(I)-based microelectrochemical transistor. The gate voltage, Vq was scanned at 1 mV/s.

To be consistent with common equations for NMOS transistors, the polarities of the applied voltages have been inverted. The source-gate voltage is denoted Vsg, the source-drain voltage Vsj, and the threshold voltage Vf. Equation (4.3) corresponds to... 

Replacing the respective variables in Eq. (4.3) using the Eqs. (4.5), (4.6), (4.7) and (4.8), a temperature-dependent MOS transistor model is obtained. This temperature-dependent model provides a term for the source-drain current depending on the source-gate voltage, the source-drain voltage, and the temperature. 

Fig. 4.19. Comparison between measured T-versus-Vsg characteristics and the MOSFET-heater model data for a source-drain voltage of 5 V...

For an OFET, the dependence of the drain current / on the source-drain voltage Vd and the source-gate voltage Vb is described hy the classical equations derived from inorganic-hased thin him transistors (Horowitz, 1998) ... 

Figure 2.10 Drain current and voltage (Ij-Vd) characteristics of the MISiC-FET in 500-ppm Hj/Nj or 0.5% Oj/Nj at 400°C. The drain-voltage shift caused by a change in ambient at a given drain current is defined as Vn.

AV, is a change in drain voltage caused by an ambient change from O2 to for the case when the drain current is kept constant. is a change in surface... 

Figure 2.13 Schematic band model of the region from source to drain through the intrinsic gate with an applied drain voltage, Vp. (From [98], 2003 IEEE. Reprinted with permission.)...

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