Opto-electronic materials

All the compounds of the family (Al, Ga, In)-(P, As, Sb) are semiconductors and are well-known electronic and opto-electronic materials. They are often indicated as 13-15 compounds meaning compounds formed by the combination of one element of the 13 th group with one of the 15 th of the Periodic Table. In the semiconductor nomenclature these compounds are also called III/V compounds on the basis of old conventions in numbering the groups of the Periodic Table. Several synthetic approaches to the preparation and purification of the compounds of this family have therefore been considered. A selection of these methods will be reported as an illustration of the variety of methodologies which find increasing applications in intermetallic and, more generally, in solid-state chemistry. 

Electrodeposition is becoming a more accepted methodology for the formation of electronic and opto-electronic materials, as evidenced by the damascene methodology for Cu interconnect formation [1 ]. This suggests that electrodeposition is not inherently incompatible with the manufacturing of devices. 

Adler, D. and Feinkib, J., (1971), The Physics of Opto-Electronic Materials, (editor W. A. Albers, Jr.), Plenum Press, New York and London, p. 233. 

Keywords Armchair Graphene Opto-electronic materials Polycyclic aromatic hydrocarbons Radicals Zigzag... 

Nanao and Eguchi [228] describe a general scheme whereby metal alkoxides and metal chelates are combined to form a gel. Thermal decomposition of the chelates produces composite multilayer films with applications as sensors, conductive or piezoelectric layers, or opto-electronic materials. Adair et al. [226] discuss a novel process based on Liesegang periodic precipitation to produce a layered Si02/Cu composite potentially useful for fabrieation of insulator-conductor multilayers for electronic packaging. 

J. Liang, N. Dariavach, and D. Shangguan, Metallurgy, Processes and Reliability of Lead-Free Solder Interconnects, to appear in Micro- and Opto-Electronic Materials and Structures Physics, Mechanics, Design, Reliability, Packaging, E. Suhir, C.P. 

Several review articles, emphasizing electro-optic properties of liquid crystals are available R. A. Soref, Liquid Crystal Light Control Experiments, in The Physics of Opto-Electronic Materials, ed. W. A. Albers, Jr., Plenum Press, New York (1971) A. Sussman, Electro-Optic Liquid Crystal Devices Principles and Applications, IEEE Trans. Parts, Hybrids, and Packaging, Vol. PHP8, p. 24 (1972) and A. Sussman, Liquid Crystals in Display Systems, in Liquid Crystalline Systems, ed. G. W. Gray and P. A. Winsor, Ellis Norwood, London (in press). 

The science and technology of conducting polymers are inherently interdisciplinary they fall at the intersection of three established disciplines chemistry, physics and engineering hence the name for this volume. These macromolccular materials are synthesized by the methods of organic chemistry. Their electronic structure and electronic properties fall within the domain of condensed matter physics. Efficient processing of conjugated polymer materials into useful forms and the fabrication of electronic and opto-electronic devices require input from engineering i. e. materials science (more specifically, polymer science) and device physics. 

Metallo-organic CVD (MOCVD) is a specialized area of CVD, which is a relatively newcomer, as its first reported use was in the 1960s for the deposition of indium phosphide and indium anti-monide. These early experiments demonstrated that deposition of critical semiconductor materials could be obtained at lower temperature than conventional thermal CVD and that epitaxial growth could be successfully achieved. The quality and complexity of the equipment and the diversity and purity of the precursor chemicals have steadily improved since then and MOCVD is now used on a large scale, particularly in semiconductor and opto-electronic applications.91P1... 

These materials are useful semiconductors and have a wide range of industrial applications, particularly in opto-electronics. One of their attractive features is the possibility of tailoring the band gap and the lattice constant in the ternary alloys by varying the composition. CVD is now a major production process of these materials. 

The opto-electronic properties of branched structures have been an area of some interest for a number of years, especially as NLO and light-emitting materials [82]. In particular, the use of u-conjugated dendrimers (mono-disperse macromolecules [83]) has flourished for a number of reasons ... 

Metal chalcogenide semi-conducting materials have found many applications in opto-electronic, solar cell and photovoltaic devices. Deposition of these materials can be achieved by a variety of techniques of which one of the most... 

Polycrystalline GaN UV detectors have been realized with 15% quantum efficiency [4], This is about 1 /4 of the quantum efficiency obtained by crystalline devices. Available at a fixed price, however, their increased detection range may well compensate their lack in sensitivity. Furthermore, new semiconductor materials with a matching band gap appear as promising candidates for UV detection if the presumption of the crystallinity is given up. Titanium dioxide, zinc sulfide and zinc oxide have to be mentioned. The opto-electronic properties and also low-cost production processes for these compound semiconductors have already been investigated to some extent for solar cell applications [5]. 

Abstract This review highlights how molecular Zintl compounds can be used to create new materials with a variety of novel opto-electronic and gas absorption properties. The generality of the synthetic approach described in this chapter on coupling various group-IV Zintl clusters provides an important tool for the design of new kinds of periodically ordered mesoporous semiconductors with tunable chemical and physical properties. We illustrate the potential of Zintl compounds to produce highly porous non-oxidic semiconductors, and we also cover the recent advances in the development of mesoporous elemental-based, metal-chalcogenide, and binary intermetallic alloy materials. The principles behind this approach and some perspectives for application of the derived materials are discussed. 

Kimg P, Razeghi M (2000) Ill-Nitride wide bandgap semiconductors, a simvey of the cimrent status and future trends of the material and device technology. Opto-Electronics Review 8(3), 201-239... 

Various crystalline materials with desired properties have been synthesized, and this has driven the utilization of single crystals in the production of semiconductor, opto-electronic, piezoelectric, and pyroelectric materials. 

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