Integrated circuits materials

Till, W. C., and Luxon, J. T., Integrated Circuits Materials, Devices, and Fabrication. Prentice-Hall, New York, 1982. 

Freeman JL, Tracy CJ, Wilson SR, editors. Handbook of Multilevel Metallization for Integrated Circuits Materials, Technology, and Applications. Noyes Publications 1993. p 352. 

Etching. After a resist is patterned on a wafer, the exposed or unwanted substrate is removed by etching processes. Subsequentiy the resist is removed, leaving a desired pattern in a functional layer of the integrated circuit. Etching is performed to pattern a number of materials in the IC fabrication process, including blanket polysiHcon, metal layers, and oxide and nitride layers. The etch process for each material is different, and adapted to the material requirements of the substrate. 

Although there has been theoretical and experimental interest in the effects of ion bombardment on materials since about 1960 (153), the growth in ion implantation technology and appHcations since then is due almost solely to the semiconductor (integrated circuit) industry. The advantages of ion implantation for semiconductor doping were first pointed out in 1955 (154), but these advantages were not widely accepted until about 1970. 

J. W. Mayer and S. S. Lau, Electronic Materials Science For Integrated Circuits in Si and GoAs, MacmiUian, New York, 1990. 

New Materials Technology. The unique chemical compatibihty of Si02 with sihcon and aluminum has been a significant factor in the dominance of siUcon-based semiconductor technology for MOSFETs in particular and integrated circuits in general. Two enhancements of conventional bipolar or MOS processes have been studied siUcon on insulator (SOI) and SiGe. An alternative material of importance is SiC. 

ALLOYS, PURE silicon) and in epitaxial siUcon deposition (see Electronic materials Integrated circuits Semiconductors) as selective reducing agents as monomers and as elastomer intermediates (see Elastomers, SYNTHETIC). Not least is the use of these materials as intermediates for production of other silanes and sihcones. 

Berylha ceramic parts ate frequendy used in electronic and microelectronic apphcations requiting thermal dissipation (see Ceramics as ELECTRICAL materials). Berylha substrates are commonly metallized using refractory metallizations such as molybdenum—manganese or using evaporated films of chromium, titanium, and nickel—chromium alloys. Semiconductor devices and integrated circuits (qv) can be bonded by such metallization for removal of heat. 

Other sohd-state apphcations of sihcon carbide include its use as an electroluminescent diode for use in sound recording equipment and photomultipliers and controllers. It has been studied as a reflective surface for lasers. By combining its excellent thermal conductivity and high electrical resistance, sihcon carbide has also found apphcation as an insulating material for integrated circuit substrates. 

C. P. Wong, Improved Eoom-Temperature Wulconicyed Silicone Elastomers as Integrated Circuit Encapsulants, Polymer Materials for Electronics Applications, American Chemical Society Symposium Series, Washington, D.C., Nos. 184, 171, 1982. 

Multilayered structures play an important role in the production of, e.g., biomaterials, catalysts, corrosion protectors, detectors/diodes, gas and humidity sensors, integral circuits, optical parts, solar cells, and wear protection materials. One of the most sophisticated developments is a head-up-display (HUD) for cars, consisting of a polycarbonate substrate and a series of the layers Cr (25 nm), A1 (150 nm), SiO, (55 nm), TiO, (31 nm), and SiO, (8 nm). Such systems should be characterized by non-destructive analytical methods. 

Laser ionization mass spectrometry or laser microprobing (LIMS) is a microanalyt-ical technique used to rapidly characterize the elemental and, sometimes, molecular composition of materials. It is based on the ability of short high-power laser pulses (-10 ns) to produce ions from solids. The ions formed in these brief pulses are analyzed using a time-of-flight mass spectrometer. The quasi-simultaneous collection of all ion masses allows the survey analysis of unknown materials. The main applications of LIMS are in failure analysis, where chemical differences between a contaminated sample and a control need to be rapidly assessed. The ability to focus the laser beam to a diameter of approximately 1 mm permits the application of this technique to the characterization of small features, for example, in integrated circuits. The LIMS detection limits for many elements are close to 10 at/cm, which makes this technique considerably more sensitive than other survey microan-alytical techniques, such as Auger Electron Spectroscopy (AES) or Electron Probe Microanalysis (EPMA). Additionally, LIMS can be used to analyze insulating sam-... 

---