Electron-beam evaporated films

In physical vapor-deposited as well as sputter-deposited films, incorporated gases can also increase stress and raise annealing temperatures. Similar effects are present in electron beam-evaporated films. 

B. J. Pond, T. Du, J. Sobczak, and C. K. Carniglia, Comparison of the optical properties of oxide films deposited by reactive-dc-magnetron sputtering with those of ion-beam-sputtered and electron-beam-evaporated films, in Laser-Induced Damage in Optical Materials, vol. 2114 of Proceedings of SPIE, pp. 345-354, Boulder, Colo, USA, October 1993. 

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... 

When LiMn204 electrodes are deposited as thin films on a platinum substrate, either by electron-beam evaporation or radiofrequency (rf) sputtering, structures are sometimes formed that exhibit unusual electrochemical behavior [146, 147]. Such electrodes have been evaluated in solid-... 

Spherical rollers were machined from AISI 52100 steel, hardened to a Rockwell hardness of Rc 60 and manually polished with diamond paste to RMS surface roughness of 5 nm. Two glass disks with a different thickness of the silica spacer layer are used. For thin film colorimetric interferometry, a spacer layer about 190 nm thick is employed whereas FECO interferometry requires a thicker spacer layer, approximately 500 nm. In both cases, the layer was deposited by the reactive electron beam evaporation process and it covers the entire underside of the glass disk with the exception of a narrow radial strip. The refractive index of the spacer layer was determined by reflection spectroscopy and its value for a wavelength of 550 nm is 1.47. 

Films of SrS HoF3, useful as white EL devices, were deposited by electron beam evaporation of SrS pellets and HoF3 powder.164... 

R. Banerjee and D. Das, Properties of tin oxide films prepared by reactive electron beam evaporation, Thin Solid Films, 149 291-301, 1987. 

Figure 27 RBS/C spectra of 2.7-MeV-He from Nb(l 10) epitaxial film on a-Al203 substrate [Nb (140 nm)/Cu (42 nm)/Nb (48 nm)/a-Al203]. The 100-nm-thick Nb films were fabricated at 750°C by electron beam evaporation.

Fig. 5. STM image (100 x 100 nm) of a l -nm-lhick platinum film electron beam evaporated onto Ge. Evaporation conditions pressure, 1.5 x lO mbar room temperature 0.5 A/s evaporation rate (26).

The tin oxide thin film was patterned by reactive ion etching (RIE) using either SiCl or 1% H2 in N2 as the etch gas. The polysilicon contact holes were opened by wet-chemical etching in buffered hydrofluoric acid (BHF). A double-layer metallization (Cr -50 nm plus A1 -1 pm) was done by electron beam evaporation to form the electrical interconnection (Figure 1c). 

The mixer was made by wet-chemical etching of glass substrates, following a photolithographic step, yielding channels for the fluid flow and for the electrodes. The electrodes (100 Q resistors) were made by an electron-beam evaporation process generating thin metallic films in the etched channels [92], Holes were drilled into the cover plate for inlet and outlet connection. Fusion bonding was used to seal the plates. 

Investigations of the amorphous-to-crystalline phase transition in electron-beam-evaporated silicon films using continuous wave (cw) laser heating have been reported by Bosch and Lemons (1982). Two facts are noteworthy (i) The amorphous-to-crystalline phase transition in a-Si starts at 600°C as determined by heating experiments and (ii) the crystallization process passes through two distinct states, possibly involving nano-crystallization. ... 

Silicon films that were electron beam evaporated at a rate of 5 nm sec-1 on silica substrates at 440°C were subsequently irradiated with an Ar+ laser. The rapidly scanned Gaussian beam formed a smooth lateral temperature gradient in the film hence it provided a simple means to study the crystallization mechanism. The laser-heated track reveals two easily discernible areas. A 1 -//m-thick film showed color changes from black to deep red at the margins of the track to light yellow in the middle of the track. Despite the smooth fall of the laser intensity, the different boundaries are abrupt. Optical absorption measurements of the respective areas are also displayed in Fig. 1. The curve E440 represents the as grown evaporated film and is in... 

Hsu, S. W., Yang, T. S., Chen, T. K. and Wong, M. S. (2007). Ion-assisted electron-beam evaporation of carbon-doped titanium oxide films as visible-light photocatalyst. Thin Solid Films 515(7-8), 3521-3526. 

Thin films of silicates have been produced by pressing powders in a diamond anvil cell (Hofmeister 1997), by cutting grain samples to submicron thick slices with an ultra-microtome (Bradley et al 1999), by electron-beam evaporation (Djouadi et al. 2005), and by laser deposition in a vacuum (Brucato et al. 2004). On one hand, powders produced in a laboratory are directly measured in transmittance when they are embedded in a matrix of transparent materials (e.g. KBr or polyethylene). On the other hand, reflectance measurements do not require the use of matrices powders of selected-size grains are directly measured with an appropriate optical accessory. Through measurements in both transmittance and reflectance, it is possible to evaluate the optical constants of a material. These are certainly the physical parameters... 

The key was the insertion of a zirconia buffer layer between the silicon substrate and the superconducting film on top of it. (Zirconia is a white crystalline compound used as an insulator in enamels and as an electrolyte in fuel cells.) The buffer, deposited with superconducting film onto the silicon by electron-beam evaporation, served as an effective barrier, preventing the elements from intermingling during the annealing process. 

Results of investigations of vanadium dioxide thin films obtained by the electron-beam evaporation method are considered. Structural and surface morphology of VO., thin films on silicon substrates are presented. Analysis of electrical characteristics of the studied samples is given. A hysteresis of temperature dependences of capacitance and resistance, as well as the phase transition at 58 °C are obtained. 

For the VO2 thin films acquisition we have used a method of electron-beam evaporation of special purity metallic vanadium target with a consequent thermal oxidation in the atmosphere of N2, containing residual quantity of water vapors and oxygen. Single-crystal oxidized Si wafers 76 mm in diameter were used as substrates. 

---