Contact hole

The disposable micro-glucose sensor consisted of thin-film electrodes positioned on a glass substrate and a small sample chamber (the iimer volume of which weis only 20 nL) was brought into contact with a silicon chip. Measmements were possible with as little as 1 pL of sample. The sensor sUncture is depicted in Fig. 3.18.E. The 10 x 20 mm silicon chip had a V-shaped groove that was 100-pm in wide, 70-pm deep and 5-mm long, in addition to two square sample inlets and five contact holes to connect lead wires to electrodes, all of which were formed by anisotropically etching the silicon. Four working electrodes that were 200 pm in width, and one counter-electrode that was 1.5-mm wide, were formed on a Pyrex substrate. The silicon chip and the Pyrex substrate were thermally bonded. 

A specially designed transistor was used to investigate the influence of the impurities in PIQ on transistor characteristics. The electrodes of this transistor do not completely cover the contact holes of the emitter and base. This structure is very sensitive to contamination. 

The tin oxide thin film was patterned by reactive ion etching (RIE) using either SiCl or 1% H2 in N2 as the etch gas. The polysilicon contact holes were opened by wet-chemical etching in buffered hydrofluoric acid (BHF). A double-layer metallization (Cr -50 nm plus A1 -1 pm) was done by electron beam evaporation to form the electrical interconnection (Figure 1c). 

An anodic oxide film 11 is selectively formed on a p-type HgCdTe layer 2 which comprises n-type regions 9. Contact holes 6 are provided to the n-type regions. Inversion layers 12 are formed between the n-type regions. 

Figure 18 Selective tungsten deposition in a contact hole.

Figure 22 Creep-up phenomena onto (a) field oxide and (b) the wall of contact hole.29...

The unwanted Si is etched away and contact holes, "denoted by A in Fig. 3, are etched through the silicon for connecting the drain contact to the ITO pads. The top electrode configuration, S and D, is then formed from the... 

Fig. 3. Design of a-Si H FET. (a) Section through device, (b) FET in part of matrix array. ITO, indium-tin oxide squares A, contact hole etched through SiN film. [From Snell et al. (1981a).]...

As soon as a plug is mounted by rotation on the socket in the rest position, the d explosion-proof chamber is maintained between the outer diameter of plug contacts and the contact holes in the socket safety shutter. 

Fig. 3.83. Top view of (a) freely formed and (b) foreign body contacting hole in a bilayer.

The chemical approach Fortunately, there is another method available to predict the step coverage of CVD-W. We use the fact that there is a close similarity between the filling of a contact hole and the transport mechanism operative in heterogeneous porous catalysis. This connection was made for the first time by McConica [McConica et al.39, Chatterjee et al.40] and below we roughly follow their approach. Consider figure 2.9. 

Louis, D. Laporte, P. Molle, P. Ullmann, H. Deep ultraviolet positive resist image by dry etching (DUV PRIME) a robust process for 0.3 pm contact holes. Proc. SPIE 1994, 2195, 497-505. 

Anchor. The next step is to open contact holes through the sacrificial oxide to the ground-plane polysilicon layer and/or the n+ runners. These contacts become the electrical and mechanical interconnections or anchors for the mechanical polysihcon structure (Fig. 5.2.6). A wet-dry etch combination provides a... 

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